ERA-3 BOARD Search Results

Resistor

Abstract: RESISTOR 1/4 W rESISTOR-0603 CHIP RESISTORS data sheet of resistor 33k pulse load resistor types of resistors IEC115-8
Contextual Info: Metal Film Chip Resistors, Rectangular Type ERA Metal Film Chip Resistors, Rectangular Type Metal Film Chip Resistor, 0603-0605, 0.1% ERA-3/6 YED/8 Series: ERA • Features • Small size and lightweight— PWB size reduction and lightweight products • High reliability—

MMIC ww107 marking CODE

Abstract: ERA-6 PL-075 PL-075 ERA-3 VV105 PCB MMIC era WW107
Contextual Info: MONOLITHIC AMPLIFIERS BROADBAND 50Ω DC to 8 GHz ERA ERA-SM all specifications at 25°C low power, up to +13.5 dBm output J MAXIMUM DYNAMIC POWER dBm RANGE at 2 GHz* at 2 GHz* GAIN , dB Typical FREQ. GHz MODELu NO. 0.1 fL - fU 1 over frequency, GHz 2 3

PL-075 ERA-1

Abstract: mmic era-5 MMIC marking code R ERA-51 PL-075 ERA-3
Contextual Info: MONOLITHIC AMPLIFIERS BROADBAND 50Ω DC to 8 GHz ERA ERA-SM all specifications at 25°C low power, up to +13.5 dBm output J MAXIMUM DYNAMIC POWER dBm RANGE at 2 GHz* at 2 GHz* GAIN , dB Typical FREQ. GHz MODELu NO. 0.1 fL - fU 1 over frequency, GHz 2 3

MMIC era

Abstract: PL-075 ERA-6SM ERA-5SM ERA-SM WW107 ERA-21SM ERA-33SM ERA-50SM ERA-51SM PL-075
Contextual Info: MONOLITHIC AMPLIFIERS BROADBAND 50Ω DC to 8 GHz ERA ERA-SM all specifications at 25°C low power, up to +13.5 dBm output J MAXIMUM DYNAMIC POWER dBm RANGE at 2 GHz* at 2 GHz* GAIN , dB Typical FREQ. GHz MODELu NO. 0.1 fL - fU 1 over frequency, GHz 2 3

Contextual Info: MONOLITHIC AMPLIFIERS BROADBAND 50Ω DC to 8 GHz ERA ERA-SM all specifications at 25°C low power, up to +13.5 dBm output J MAXIMUM DYNAMIC POWER dBm RANGE at 2 GHz* at 2 GHz* GAIN , dB Typical FREQ. GHz MODELu NO. 0.1 fL - fU 1 over frequency, GHz 2 3

ERA-01

Abstract: ERA-04TB mmic amplifier code E5 WW107 MMIC era ERA-1SM
Contextual Info: MONOLITHIC AMPLIFIERS BROADBAND 50Ω DC to 8 GHz ERA ERA-SM all specifications at 25°C low power, up to +13.5 dBm output GAIN , dB Typical J MAXIMUM DYNAMIC POWER dBm RANGE at 2 GHz* at 2 GHz* FREQ. GHz MODELu NO. 0.1 fL - fU 1 over frequency, GHz 2 3

WW107 OUTLINE

Abstract: MMIC era VV105 PCB ERA-5SM marking code 5438 ERA-21SM ERA-33SM ERA-50SM ERA-51SM PL-075
Contextual Info: MONOLITHIC AMPLIFIERS BROADBAND 50Ω DC to 8 GHz ERA ERA-SM all specifications at 25°C low power, up to +13.5 dBm output GAIN , dB Typical J MAXIMUM DYNAMIC POWER dBm RANGE at 2 GHz* at 2 GHz* FREQ. GHz MODELu NO. fL - fU 0.1 1 over frequency, GHz 2 3

phase controller L120

Abstract: T40 16 ultrasonic IL200 marking code Iay 28F008SA LH28F016SCN-L95
Contextual Info: SHARP LHF16C09 1 CONTENTS PA G E PA G E 1.0 INTRO DUCTIO N. 3 5.0 D ESIG N C O N SID ERA TIO N S. 23 1.1 New Features. 3 1.2 Product Overview. 3

SFH487P

Abstract: SFH487P-1 SFH487P-2
Contextual Info: SIEMENS AKTIENGESELLSCHAF 47E D • 053StOS 0 0 2 7 3 ^ ñ « S I E G S IE M E N S SFH487P GaAIAs INFRARED EMITTER Maximum Ratings Storage tem p era ture - 5 5 to + 1 0 0 Tsta °C Soldering tem p era ture at dip soldering > 2 m m d istan ce from the ca se bottom .

EL7232C

Abstract: EL7232CN EL7232CS QCX0002
Contextual Info: EL7232C élantec high PFRF-GRUASICEANALOG.TTGRA7EDC‘FICJITS EL7232C Duul Channel. High Speed, High Current Line Driver w/3-State F e a tu r e s G en era l D e sc r ip tio n • • • • • • The EL7232C 3-state drivers are particularly well suited for

Contextual Info: EL2166C EL2166C 110 MHz Current Feedback Amplifier with Disable HIGH PERFORMANCE ANAUS6 INTEGRATED CIRCUITS F e a tu r e s G en era l D e sc r ip tio n • 110 M Hz 3 dB bandwidth AV = + 2 • 115 M Hz 3 dB bandwidth (AV = + 1 ) • 0.01% differential gain,

SOt23-5 footprint wave soldering

Abstract: transistor z5t EL2180C EL2180CN EL2180CS EL2186C EL2280C EL2286C EL2386C EL2480C
Contextual Info: EL2180C/EL2280C/EL2480C 250 MH:/3 mA Current Mode Feedback Amplifier» ûGI' PERFORMANCE ANALOü INTEGRATED C*C jîTS F e a tu r e s G en era l D e sc r ip tio n • Single EL2180C , dual (EL2280C) and quad (EL2480C) topologies • 3 mA supply current (per

TIC2260

Abstract: C10601 SC141D IN5829 IN3492 in540i IN1190 IN3493 IN1183A IN1184
Contextual Info: G EN ERA L PURPOSE R ECTIFO SS 0 2 5 8 3 5 4 ADVANCED SEMICONDUCTOR 82 ÍE1 02553511 n""""35 11 I 820 00035 o r~ Of-o / lo AVERAGE RECTIFIED FORWARD CURRENT AMPERES VRRM 50 100 150 200 300 400 500 600 700 800 900 1000 1200 IFSM VFM Ca s é 3 3 5 6 MR500

LM714

Abstract: LM714 dual package transistor D113 3193A LM11 op amp ca3193e CA3193 CA3193A CA3193AE D113
Contextual Info: CA3193, CA3193A S em iconductor 1.2MHz, BiCMOS Precision Operational Amplifiers J a n u a ry 1998 ceo1 Features Description OS • Low V| q T he C A 3 19 3A and C A 3 19 3 are ultra-stable, precision in stru m en ta tion , o p era tiona l am p lifie rs tha t em ploy both

Contextual Info: ERA»]MS H<DE 1W TH]RD tHSLS PROJECT] THIS DRtmw 15 UNPUBLISHED. | H _ "> OB5 - 1 3 PER EC 0 0 2 0 - 0 3 4 1 -9 3 EJECTION THIS LATCHES VIEW FOR OMITTED PER EC 0 0 2 0 - 0 3 3 0 - 9 6 IN _L§: CLARITY * COORDIN ATE A P05N NO 1 TYP RECOMMENDED P R I N T E D

Contextual Info: EL7232C élantec h ig h EL7232C Duul Channel. High Speed, High Current Line Driver w/3-State PFRF-GRUASICE ANALOG .TCGFiATEP C‘FICJITS F e a tu r e s G en era l D e sc r ip tio n • • • • • • The EL7232C 3-state drivers are particularly well suited for

04ti

Contextual Info: EL2260C/EL2460C to r D ual 'Quad/'JO M fh t'urrrnt f'rtd b a ck 1m plifivrs HIGHPERFORMSNCEANAIOS INTEGRATEDCfflCUrTS F e a tu r e s G en era l D e sc r ip tio n • 130 MHz 3 dB bandwidth Av = + 2 • 180 M Hz 3 dB bandwidth (Av = + 1 ) • 0.01% differential gain,

Contextual Info: S ta n d a rd P r o d u c t I I T# IV * ISSUE 3 P /W C -S /'era, Inc. PM5343STXC SONET/SDH TRANSPORT OVERHEAD TRANSCEIVER FEATURES • Monolithic SONET/SDH Transport Overhead Terminating Transceiver for use in STS-1, STS-3 or STM-1 interface applications, operating at serial interface

TB-431-3

Abstract: ERA-3 schematic diagram X 431 TCCH-80
Contextual Info: Evaluation Board and Circuit ] Vcc GND RF IN RF OUT T B -43 1 - 3 + R1 COMPONENT A1 C1 NOTE 4 C2 (NOTE 4) C3 (bypass) R1 R2 CHK R2 VALUE ERA—3(+) 2400 pF 2400 pF 0.1 uF 249 Ohms, 0.75W 2.21 Ohms, 0.25W Mini-Circuits TC CH -80+ Schematic Diagram NOTE: 1. Vcc voltage:

Contextual Info: TOSHIBA TA8479F TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA8479F 3 PHASE FULL W A V E BRUSHLESS DC M O TO R DRIVER IC FOR VIDEO CAM ERA TA8479F is a capstan/cylinder motor 1-chip driver IC for video camera. Enclosing the capstan and cylinder sections

Contextual Info: T O SH IB A TA8479F TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA8479 F 3 PHASE FULL W A V E BRUSHLESS DC MOTOR DRIVER IC FOR VIDEO CAM ERA TA8479F is a capstan /cylinder motor 1-chip driver IC for video camera. Enclosing the capstan and cylinder sections

Stepping Motor

Abstract: LB1833M MFP16FS lb1833 EN3297
Contextual Info: Ordering n u m b e r:EN 3297 Monolithic Digital 1C LB 1 8 3 3 M N o.3297 Low-Saturation Bidirectional Motor Driver for Low-Voltage Applications The LB1833M is a low -saturation stepping motor driver IC for use in low-voltage applications. It is especially suited for use in portable equipm ent such as p rinter, FDD, cam era.

37C65

Abstract: c5287 FE3001 FE3031 T58-T57 D 80287-8 em-180 PFA 10Z FE3010B FE3021
Contextual Info: WESTERN DIGITAL CORP 4QE D m =1710220 Q0QbSS3 Q •■ bil>C fri . „ SYST EM S L Ö GIC / P ERIP H ERA L " ' I ^ T S 1 ^ 3 » '2 . \ FE3021 Address Buffer and Memory Controller •HÜWESTERN DIGITAL H Powered by ICminer.com Electronic-Library Service CopyRight 2003

MARKING 33A DIODE SOT23

Abstract: marking code 41
Contextual Info: G en era l S e m ic o n d u c t o r _ GF3441 P-Channel Logic Level Enhancement-Mode MOSFET V ds -2 0 V SOT-23-6L 0.122 3.10 _ 0.114(2.90) am R d S(ON) 10OmQ Id -3 .3 A Pin Configuration (Top View) Top View 7 T t7! rn 0.118 (3.00) 0.106(2.70)