ERA-3 E3 Search Results

Mini-circuits marking code

Contextual Info: Monolithic Amplifiers Broadband 50Ω Drop-In & Surface Mount DC to 8 GHz ERA ERA-SM All specifications at 25°C GAIN, dB Typical  FREQ. GHz MODEL NO. over frequency, GHz fl - fu ERA-1 99+ ERA-2 99+ ERA-3 99+ ERA-1SM 99+ DC-8 ERA-2SM 99+ DC-6 ERA-3SM 99+ DC-3

Mini-circuits marking code

Abstract: VV105 ERA-3SM 99 ERA-3SM E3 monolithic ERA 5 ERA monolithic amplifier WW107 ERA-2SM E2 era-3 e3 era12
Contextual Info: MONOLITHIC AMPLIFIERS 50Ω Drop-In & Surface Mount BROADBAND DC to 8 GHz ERA ERA-SM All specifications at 25°C J FREQ. GHz MODEL NO. ERA-1 ERA-2 ERA-3 ERA-4 99 99 99 99 ERA-1SM ERA-2SM ERA-3SM ERA-4SM 99 99 99 99 GAIN, dB Typical over frequency, GHz THERMAL

Contextual Info: M onolithic A m plifier s 50Q Drop-In & Surface Mount Broadband DCto8 GHz V- ERA ERA-SM All specifications at 25°C GAIN, dB Typical POWER, dBm m over frequency, GHz MODEL NO- f,'fu 0.1 1 2 ERA-1 ERA-2 ERA-3 ERA-4 ERA-5 DC-8 DC-6 DC-3 DC-4 DC-4 11.8 16.0

Contextual Info: Mini-Circuits* M o n o lith ic A m p lifie r s 50Q Drop-In & Surface Mount B roadband DC to 8 GHz All specifications at 25°C G A IN . dB T y p ic a l Ö FREQ GHz ovei frequency, GHz MODEL NO. ERA-1 ERA-2 ERA-3 H , 0.1 1 2 3 4 6 8 D C -8 12.2 12.1 11.8 11.5 11.3 11.0 10.2

marking E5 amplifier

Abstract: ERA monolithic amplifier vv105 mini ERA-3SM VV105 3SM diode ERA-4 ERA-1 ERA-4SM nf ERA-6SM
Contextual Info: MONOLITHIC AMPLIFIERS 50Ω Drop-In & Surface Mount BROADBAND DC to 8 GHz ERA ERA-SM All specifications at 25°C J FREQ. GHz MODEL NO. fl - fu GAIN, dB Typical over frequency, GHz 0.1 1 2 3 4 6 8 THERMAL RESISat 2 GHz* at 2 GHz* TANCE Output In Out θjc,

Mini-Circuits ERA-1SM

Abstract: ERA-3SM 99 marking E5 amplifier ERA-4SM nf 3SM diode cb amplifier ERA-1SM ERA-4SM marking code k1 ERA-3SM E3
Contextual Info: MONOLITHIC AMPLIFIERS BROADBAND 50Ω Drop-In & Surface Mount DC to 8 GHz ERA ERA-SM All specifications at 25°C J FREQ. GHz MODEL NO. fl - fu GAIN, dB Typical over frequency, GHz 0.1 1 2 3 4 6 8 MAXIMUM DYNAMIC POWER, dBm RANGE at 2 GHz* at 2 GHz* TANCE see

vv105

Abstract: era-3 e3 ERA-3SM E3
Contextual Info: MONOLITHIC AMPLIFIERS 50Ω Drop-In & Surface Mount BROADBAND DC to 8 GHz ERA ERA-SM All specifications at 25°C J FREQ. GHz MODEL fl - fu NO. GAIN, dB Typical over frequency, GHz 0.1 1 2 3 4 6 8 MAXIMUM POWER, dBm at 2 GHz* DYNAMIC RANGE at 2 GHz* Output

e6xx

Abstract: alphanumeric
Contextual Info: MONOLITHIC AMPLIFIERS 50Ω Drop-In & Surface Mount BROADBAND DC to 8 GHz ERA ERA-SM All specifications at 25°C J MAXIMUM DYNAMIC POWER dBm RANGE at 2 GHz* at 2 GHz* GAIN , dB Typical FREQ. GHz MODELu NO. 0.1 f L - fU 1 over frequency, GHz 2 3 4 6 8

ERA-3SM E3

Abstract: era-3 e3 ERA-2SM E2 ERA-3SM 03 ERA-6 Mini-Circuits RF Amplifier
Contextual Info: MONOLITHIC AMPLIFIERS BROADBAND 50Ω Drop-In & Surface Mount DC to 8 GHz ERA ERA-SM All specifications at 25°C J FREQ. GHz MODEL fl - fu NO. GAIN, dB Typical over frequency, GHz 0.1 1 2 3 4 6 8 MAXIMUM POWER, dBm at 2 GHz* DYNAMIC RANGE at 2 GHz* Output

phase controller L120

Abstract: T40 16 ultrasonic IL200 marking code Iay 28F008SA LH28F016SCN-L95
Contextual Info: SHARP LHF16C09 1 CONTENTS PA G E PA G E 1.0 INTRO DUCTIO N. 3 5.0 D ESIG N C O N SID ERA TIO N S. 23 1.1 New Features. 3 1.2 Product Overview. 3

SK642

Abstract: 200NH
Contextual Info: W ID E 3 A AID W I D T H . HIG H VOLTAGE CRT V I D E O A M P L I F I E R 642 8 1 7 0 T hom pson Road C Ic era N.Y. 1 3 0 3 9 3 1 5 6 9 9 -9 2 0 1 FEATURES: MIL-STD-1772 CERTIFIED * Negative putput Voltage for Grid Drive * * * * * * 2 n S TT’anaition Times

2SC2522

Abstract: 15D transistor 2SC2522A R2213 2C2523 2sa1073 2SC25 10ICI
Contextual Info: FUJITSU MICROEL ECT RONICS 31E D B 374=^2 DOlbSlfl 3 S F M I r - 22-13 E f t . r . S F : PRODUCT PROFILE " U H T i C U 2SC2522, 2C2522A, 2C2523 Silicon High Speed Power Transistor DESCRIPTION T he 2S C 2522/2S C 2522A/2SC 2523 are silicon NPN gen era l purpose, high pow er

Contextual Info: CY7C1346 PRELIMINARY 64K x 36 Synchronous-Pipelined Cache RAM Features T he C Y 7 C 1 346 I/O pins can o p era te at eith e r the 2.5 V o r the 3 .3 V level; the I/O pins are 3.3 V to le ra n t w h en V DDQ=2.5V. • S u p p o rts 1 0 0-M H z bus fo r P en tiu m and Pow erPC

th 2167

Contextual Info: EL2071C/EL2171C EL2071C/EL2171C m m w is F e a tu r e s G en era l D e sc r ip tio n • 150 M H z — 3 dB bandw idth, Av = 20 • 10 ns settlin g to 0.1% • Vs = + 5V @ 15 mA • 2.5 ns rise/fall tim es 2V step • O v erload/short-circuit protected • ± 7 to ± 50 closed-loop gain

HD63B05X2P

Abstract: DP-64S HD6305X2 HD6305X2F HD6305X2P HD63A05X2 HD63A05X2F HD63A05X2P HD63B05X2 HD63B05
Contextual Info: HD6305X2, HD63A05X2, HD63B05X2 CMOS MCU Microcomputer Unit T h e H D 6 3 0 5 X 2 is m e m o ry e x p a n d a b le v e rs io n s o f the H D 6 3 0 5 X 0 , w h ic h is C M O S 8 - b it s in g le c h ip m ic ro c o m p u te r. A C P U , a c lo c k gen era tor, a 128-byte R A M , I/O te rm in a ls , tw o

20N120E2

Contextual Info: S m a r r ì H G T G 2 0 N 120E2 34A, 1200V N-Channel IGBT A pril 1995 Package Features JE D E C S TYLE TO -247 • 3 4 A ,1 2 0 0 V • L atch F ree O p era tio n • Typ ica l Fall T im e - 7 80 n s • H igh In p u t Im p e d a n c e • Lo w C o n d u c tio n Loss

TA 7343 P

Abstract: TA 7343 AP
Contextual Info: J 4ME D E3 flTSQOTb 0011127 2 H A L 66 ^ TELEFUNKEN ELECTRONIC U 2149 B-FP H Broadband compander circuit for FM radio telephony transceiver noise reduction ~_T 7 3 *- 3> T e c h n o lo g y : B ipolar F e a tu re s : • O n e com p res s o r channel • C M O S c o m p a tib le p o w e r d o w n in put

CAT93C46H

Abstract: A0049 NMC9346
Contextual Info: CATALYST SEMICONDUCTOR E3E D l'Irbis GOOICHM 1 • CATALYST S E M IC O N D U C T O R ,IN C . T - 4 4 - i3 - < 3 ? 2231 CALLE DE LUNA, SANTA CLARA, CA 95054 Telephone: 408 748-7700 CAT93C46H 1KBIT SERIALEEPROM-fflGH ENDURANCE DESCRIPTION FEATURES The CAT93C46H is a High Endurance CMOS 1Kbit serial EEPROM with a low current drain of 3 mA

Contextual Info: C 3 M ini-Circuits* M A m plifiers onolithic 50Q Drop-In & Surface M ount B roadband DC to 8 GHz r> All specificotions o f 25°C G A IN , dB Typical Ö FREQ. GHz a t 2 G H z* Output Flatness 1 dB Input M in . DCC om p. (no 2 G H z 2 GHz Typ. Min. dm g.)

Contextual Info: HIGH VOLTAGE POWER OPERATIONAL AMPLIFIERS v JÄPBC M I C R O T E C H N O L O G Y PA15 • PA15A http ://W W W .A P E X M IC R D TE C H .O O M 8 0 0 5 4 6 - APEX (8 0 0 ) 5 4 6 -2 7 3 9 FEATURES • HIGH VOLTAGE— 450V (±225V) • LCWOOST • LCW GUI E3CBÍT CURRBJT— 3.0mA MAX

Contextual Info: ED S TLZ 950/ÛE 2-2 4 p o le s, Spacing 5 .0 8 m m insert required no. of poles •• H o w to ord e r see page 6 R a tin gs : E3 U L10 5 9 M M D IN V D E 0627 C S A 2 2.2 N o. 158 R a te d V ol ta g e 250 V B 300 V B 25 0 V Ra ted C urren t 15 A 16 A 1 2 A T 6 0

Contextual Info: NH SERIES C1 .2 7 mm pitch pi" type cerracts Cable Clamp Type Sockets •ORDERING CODE NHS050— 000— BS Unmarked = No. 4-40UNC 1 = No. 2-56UNC Tapping dimension 2 = M2.6_ Type of clamp plating S = Solder Type of contact plating B = Gold Connection type 0 = Cable clamp

Contextual Info: ft i~ 'TH!RD ANGLE PROJECTION c 1980* e*x—- xi - C i s f t s v AMP Japa*; Ue. ALU R<CHT5 RESERVES. AMP (>«0£XJCTS COVEftEO BY PATENTS ANO OR PATEMTS PSKOf« AMP 2.54 xnsB 2. 54 x.n=B e E3 3 m r J _4a 34=. 3S. U tiL f c iS & ( M J ( S -6 OJajui ? m -4

Contextual Info: HIGH VO LTAG E POW ER O P E R A TIO N A L A M P LIFIE R » •vvk-V'i*:-; » v t v - v j * APEX MICROTECHNOLOGY CORPORATION « APPLICATIONS HOTLINE 8 00 546-APEX 800-546-2739 AD VAN CE INFORMATION FEATURES • • • • • MONOLITHIC MOS TECHNOLOGY LOW COST