ERASABLE Search Results

UZ210

Abstract: P1275
Contextual Info: TOSHIBA MOS MEMORY PRODUCTS TMM27512ADI-20, TMM27512ADI-25 DESCRIPTION The TMM27512ADI is a 65,536 words * 8 bits ultraviolet light erasable and electri­ cally programmable read only memory. For read operation, the TMM27512ADI's access time is 200ns/250ns, and the TMM27512ADI

Contextual Info: TMS28C64 65,536-BIT ELECTRICALLY ERASABLE PROGRAMMABLE READ-ONLY MEMORY • Organization 8K x 8 • Single 5-V Power Supply ± 10% N AND J PACKAGES (TOP VIEW } Q 1 U A 12C 2 A7C 3 Compatible with Existing 64K M O S EPRO M s. PRO M s. R O M s, and EEPR O M s

A1051

Contextual Info: TMS27C291, TMS27C292 16.384-BIT UV ERASABLE PROGRAMMABLE READ-ONLY MEMORIES TMS27PC291 16,384-BIT PROGRAMMABLE READ-ONLY MEMORY SEPTEM BER 1986 —REVISED APRIL 1988 Organization . . . 2K x 8 J AND N PA C KA G E Pin Compatible with Existing 2K x 8 Bipolar/High-Speed CM OS EPROMs

27C020-12

Abstract: 27PC020-12 LS020 A1025 LS020B 2097152-BIT
Contextual Info: TMS27C020 2097152-BIT UV ERASABLE PROGRAMMABLE TMS27PC020 2097152-BIT PROGRAMMABLE READ-ONLY MEMORY SM LS020B - N O V E M B E R 1990 - REVISED JU N E 1995 • Organization . . . 256K x 8 J PACKAGE TOP VIEW • Single 5-V Power Supply • Operationally Compatible With Existing

Contextual Info: TOSHIBA TC58V64FT/DC TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 64-MBIT 8M X 8 BITS CMOS NAND E2PROM DESCRIPTION The TC58V64FT/DC is a single 3.3-V 64-Mbit (69,206,016-bit) NAND electrically erasable and programmable read-only memory (NAND E2PROM) organized as 528 bytes X 16 pages X 1024 blocks.

Contextual Info: SILICON STACKED GATE MOS INTEGRATED CIRCUIT - TC57256AD-12,-120,-150 32 , 768 W O R D x 8 B I T C M O S UV ERASABLE A N D ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY IDESCRIPTIONI The TC57256AD is a 32,768 word x 8 bit CMOS ultraviolet light erasable and electri­

TC57256AD

Contextual Info: TOSHIBA TC57256AD-12 TC57256AD-120 TC57256AD-150 SILICON STACKED GATE CMOS 32,768 WORD x 8 BIT CMOS UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY Description The TC57256AD is a 32,768 word x 8 bit CMOS ultraviolet light erasable and electrically programmable read only memory. It

27C510

Abstract: pc51020 SMJ27C510 pc510-20
Contextual Info: TMS27C510 524 288-BIT ERASABLE PROGRAMMABLE READ-ONLY MEMORY TMS27PC510 524 288-BIT PROGRAMMABLE READ-ONLY MEMORY SMLS51OA-AUGUST 1990-REVISED JANUARY 1993 J AND N PACKAGESÎ TOP VIEW Organization . . . 64K x 8 Single 5-V Power Supply V pp [ Pin Compatible With Existing 1 Meg MOS

27C512-3

Abstract: 27c512-45 TG-14 27C512 27C512-2
Contextual Info: TEXAS "Ô 961725 INSTR TEX A S {ASIC/MENORY} INS TR PRODUCT PREVIEW 77 d e A S IC /M EM O R V T 0 ^ 1 7 5 5 77C 4 0 9 33 G D Ll ü li 3 3 D TMX27C512 524,288-BIT ERASABLE PROGRAM M ABLE READ ONLY M EM O RY N O V E M B E R 1965 J PACKAGE Organization . . . 64K x 8

Contextual Info: TMS28F040 4 194 304-BIT FLASH ELECTRICALLY ERASABLE PROGRAMMABLE READ-ONLY MEMORY SMJS040-DECEMBER 1992 N PACKAGET Organization . . . 512K x 8 Separately Erasable 32K Byte Blocks Two Power Supplies 5 V and 12 V 100% TTL-Level Control Inputs Fully Automated On-Chip Erase and Byte

tc58v32ft

Abstract: TC58V32
Contextual Info: IN TEG RA TED CIRCUIT TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC58V32 FT TO SHIBA TECHNICAL DATA SILICON GATE CMOS 32 MBIT 4 M X 8 BITS CMOS NAND E2PROM TENTATIVE DATA DESCRIPTION The TC58V32FT device is a single 3.3-volt 33 M (34,603,008) bit NAND Electrically Erasable and

Contextual Info: SMJ27C010 1,048,576-BIT UV ERASABLE PROGRAMMABLE READ-ONLY MEMORY M A R C H 1 9 8 8 — R E V IS E D J U L Y 1 9 8 8 • Organization . . . 128K x 8 J PACKAGE • Single 5-V Power Supply TOP VIEW • Industry Standard 32-Pin Dual-ln-llne Package • All Inputs/Outputs Fully TTL Compatible

Contextual Info: TMS27C020 2 097152 BIT UV ERASABLE PROGRAMMABLE READ-ONLY MEMORY TMS27PC020 2 097152 BIT PROGRAMMABLE READ-ONLY MEMORY SMLSO 2 O A-N OVEM BER 18 9 0 -R E V IS E P JANUARY 1993 x J PACKAGEt TOP VIEW 8 Single 5-V Power Supply Vpp[ Operationally Compatible With Existing

TC5716200D-150

Abstract: 5716200D
Contextual Info: TOSHIBA TC5716200D-150, -200 SILICON STACKED GATE CMOS 1,048,576 WORD x 16 BIT/2,097,152 WORD x 8 BIT CMOS UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY D escription T heT C 5716200D is a 16,777,216 bit CMOS ultraviolet light erasable and electrically programmable read only memory. It is

Contextual Info: INTEGRATED TOSHIBA CIRCUIT TECHNICAL DATA TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC58A040 F SILICON GATE CMOS 4 MBIT 4 M X 1 BITS CMOS AUDIO NAND E2PROM TENTATIVE DATA DESCRIPTION The TC58A040 is a 5-volt 4 Mbit NAND Electrically Erasable and Programmable Read Only Memory

tms jl 27C256-15

Abstract: tms jl 27c256-12 tms jl 27C256-10 TMS JL 27C256-20 TMS JE 27C256-15
Contextual Info: TMS27C256 32768 BY 8-BIT UV ERASABLE TMS27PC256 32768 BY 8-BIT PROGRAMMABLE READ-ONLY MEMORIES _ SMLS25BH- SEPTEMBER 1964 - REVISED NOVEMSER 1997 Organization . . . 32768 by 8 Bits J PACKAGE TO P VIEW Single 5-V Power Supply Pin Compatible With Existing 256K MOS

s27c64

Abstract: TMS27C64JL
Contextual Info: TM S27C64 65,536-BIT UV ERASABLE PROGRAMMABLE READ-ONLY MEMORY TM S27PC64 65,536-BIT PROGRAMMABLE READ-ONLY MEMORY NOVEM BER 1 9 6 5 - REVISED APRIL 1 9 8 8 This Data Sheet is Applicable to A ll TMS27C64s and TMS27PC64s Symbolized with Code " A " as Described on Page 12.

9262E

Contextual Info: SMJ27C256 262 144-BIT UV ERASABLE PROGRAMMABLE READ-ONLY MEMORY SGMS005D-MAY 1986-REVISED FEBRUARY 1993 Military Operating Temperature Range . . . - 55°C to 125°C J P A C K A G ET T O P V IE W MIL-STD-883C Class B High-Reliabillity Processing Organization . . . 32K

27c040-12

Contextual Info: SMJ27C040 524288 BY 8-BIT UV ERASABLE PROGRAMMABLE READ-ONLY MEMORY SGMS046B - NOVEMBER 1992 - REVISED SEPTEMBER 1997 Organization . . . 524288 by 8 Bits Single 5-V Power Supply Industry Standard 32-Pin Dual-In-line Package All Inputs/Outputs Fully TTL Compatible

Contextual Info: SMJ27C210 1 048576-BIT UV ERASABLE PROGRAMMABLE READ-ONLY MEMORY SM G S028A — MARCH 19B8 — REVISED N O VEM BER 1990 J Package Top View Single 5-V Power Supply Operationally Compatible With Existing Megabit EPROMs 40-Pln Dual-In-line Package All Inputs and Outputs Fully TTL

Contextual Info: T O S H IB A TENTATIVE TC58V32DC TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32 M BIT 4 M x 8 BITS CMOS NAND E2PROM DESCRIPTION The TC58V32DC device is a single 3.3-volt 33 M (34,603,008) bit NAND Electrically Erasable and Programmable Read Only Memory (NAND EEPROM) organized as 528 byte X 16 pages X 512 blocks.

TC58NVG1S3ETA00

Abstract: TC58NVG1S3ET TC58NVG1S3 TC58NVG1S3ETA DIN2111
Contextual Info: TC58NVG1S3ETA00 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 2 GBIT 256M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58NVG1S3E is a single 3.3V 2 Gbit (2,214,592,512 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 2048blocks.

Contextual Info: TC9WMA1FK TOSHIBA CMOS Digital Integrated Circuits Silicon Monolithic TC9WMA1FK 1,024-Bit 128 x 8 Bit Serial EEPROM The TC9WMA1FK is electrically erasable/programmable nonvolatile memory (EEPROM). Features • Serial data input/output • Programmable in units of one word and collectively erasable

27c eeprom

Abstract: 27C291 74TTL
Contextual Info: 0^1755 DG77HS TMS27C291, TMS27C292 16,384-BIT UV ERASABLE PROGRAMMABLE READ-ONLY MEMORIES TMS27PC291 16,384-BIT PROGRAMMABLE READ ONLY MEMORY SEPTEMBER 1988-R EV ISED APRIL 1988 • Single 5-V Power Supply • Pin Compatible with Existing 2K x 8 BIpolar/High-Speed CMOS EPROMs