ERICSSON 10031 Search Results

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ERICSSON 10031

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Contextual Info: ERICSSON ^ PTF 10031 45 Watts, 1.0 GHz LDMOS Field Effect Transistor Description The 10031 is a com mon source n-channel enhancement-mode lateral MOSFET intended for large signal am plifier applications to 1.0 GHz. It is rated at 45 watts minimum output power. Nitride surface passivation

Contextual Info: ERICSSON ^ PTE 10015* 45 Watts, 1.0 GHz LDMOS Field Effect Transistor Description The 10015 is a common source n-channel enhancement-mode lateral MOSFET intended for large signal amplifier applications to 1 0 GHz. It is rated at 45 watts minimum output power. Nitride surface

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Abstract: ERICSSON 10031 PTF 10031
Contextual Info: ERICSSON í PTF 10031 45 Watts, H F - 1 . 0 GHz L D M O S Field Effect Transistor Description The 10031 is a common source N-channel enhancement-mode lateral MOSFET intended for large signal amplifier applications to 1.0 GHz. It is rated at 45 w a tts m inim um o u tp u t power. N itride surface

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Contextual Info: ERICSSON í E 10015* 45 Watts, H F - 1 . 0 GHz L D M O S Field Effect Transistor D escription The 10015 is a common source N-channel enhancement-mode lateral MOSFET intended for large signal amplifier applications to 1.0 GHz. It is rated at 45 w a tts m inim um o u tp u t power. N itride surface

ERICSSON 10031

Abstract: G200
Contextual Info: PTF 10031 50 Watts, 1.0 GHz GOLDMOS Field Effect Transistor Description The PTF 10031 is a 50 Watt LDMOS FET intended for large signal amplifier applications to 1.0 GHz. It operates at 55% efficiency and 13.0 dB of gain. Nitride surface passivation and full gold metallization ensure

ERICSSON 10031

Abstract: G200
Contextual Info: GOLDMOS PTF 10031 Field Effect Transistor 50 Watts, 1.0 GHz Description The PTF 10031 is a 50–watt GOLDMOS FET intended for large signal amplifier applications to 1.0 GHz. This device operates at 55% efficiency with 13 dB gain. Nitride surface passivation and full gold

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Abstract: capacitor siemens 4700 35 G200
Contextual Info: PTF 10015 50 Watts, 300–960 MHz GOLDMOS Field Effect Transistor Description Features The PTF 10015 is a 50 Watt LDMOS FET intended for large signal amplifier applications from 300 to 960 MHz. It operates at 55% efficiency and 13.0 dB of gain. Nitride surface passivation and full

Contextual Info: PTF 10015 50 Watts, 300–960 MHz GOLDMOS Field Effect Transistor Description Features The PTF 10015 is a 50–watt GOLDMOS FET intended for large signal amplifier applications from 300 to 960 MHz. This device operates at 55% efficiency with 13 dB gain. Nitride surface

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Contextual Info: October 1997 Microcontroller support tools Selection Guide 17-001C INDEX Microcontroller support tools Introduction 2 Hardware Tools Evaluation Boards PCE Emulators PCE Ordering PCE Software & System Kits E6000 Emulators E6000 Systems & Ordering E7000PC Emulators

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Contextual Info: Support Tools F/C 22.10.1998 20:37 Uhr Page 2 O ct o b e r Microcontroller s u p p o r t t o o l s s e l e c t i o n g u i d e 1 7 - 0 0 1 D 1 9 9 8 Support Tools F/C 22.10.1998 20:37 Uhr Page 5 INDEX Microcontroller s u p p o r t t o o l s Introduction 2

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