ERIE .33 400 Search Results

ERIE CAPACITORS

Abstract: GX-0600-55-22 MURATA ERIE CAPACITOR erie capacitor 2443 MOTOROLA transistor SAHA Mica capacitors Erie TRIMMER CAPACITOR SAHA erie .33 400 MRF658
Contextual Info: MOTOROLA SEM ICO N DU CTO R TECHNICAL DATA MRF658 The RF Line NPN Silicon RF Power Transistor D esigned for 12.5 Voit U H F large-signal, common emitter, class-C amplifier applications in industrial and commercial F M equipment operating to 520 MHz. 65 W, 512 MHz

ERIE CAPACITORS

Abstract: MURATA ERIE CAPACITOR ERIE CAPACITORS TYPE K erie capacitor
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The R F Line NPN Silico n RF Pow er Transistor Designed for 12.5 Volt UHF large-signal, common emitter, c la s s-C amplifier applications in industrial and commercial FM equipment operating to 520 MHz. • Specified 12.5 Volt, 512 MHz Characteristics

transistor D 2581

Abstract: ERIE CAPACITORS TYPE K ERIE CAPACITORS N5060 erie .33 400 Erie TRIMMER CAPACITOR CAPACITOR MURATA
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line N P N Silicon RF Pow er Transistor D e sign e d for 12.5 Volt U H F large-signal, com m on emitter, c la s s - C amplifier applications in industrial and commercial F M equipment operating to 520 MHz. • Specified 12.5 Volt, 512 M H z Characteristics

Contextual Info: MOTOROLA Order this document by MRF658/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF658 Designed for 12.5 Volt UHF large–signal, common emitter, class–C amplifier applications in industrial and commercial FM equipment operating to 520 MHz.

QE RB 29

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN S ilico n RF Pow er Transistor Designed for 12.5 Volt UHF large-signal, common emitter, class-C amplifier applications in industrial and commercial FM equipment operating to 520 MHz. • Specified 12.5 Volt, 512 MHz Characteristics

ERIE CAPACITORS

Abstract: SAHA Mica capacitors MRF658 erie capacitor SAHA trimmer 3-30 pf nippon capacitors GRH710 MURATA ERIE CAPACITOR MOTOROLA 381 equivalent
Contextual Info: MOTOROLA Order this document by MRF658/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF658 Designed for 12.5 Volt UHF large–signal, common emitter, class–C amplifier applications in industrial and commercial FM equipment operating to 520 MHz.

MRF658

Abstract: SAHA Mica capacitors ERIE CAPACITORS nippon capacitors MURATA ERIE CAPACITOR GX-0600-55-22 MOTOROLA 381 equivalent CAPACITOR MURATA 420 NPN Silicon RF Transistor murata erie
Contextual Info: MOTOROLA Order this document by MRF658/D SEMICONDUCTOR TECHNICAL DATA NPN Silicon RF Power Transistor LAST SHIP 06/07/00 The RF Line MRF658 Designed for 12.5 Volt UHF large–signal, common emitter, class–C amplifier applications in industrial and commercial FM equipment operating to 520 MHz.

Y5P102K

Abstract: MA2830 LQH3C1R0M04M00 MA2810-1 6003R3 RVG4F03A PLH11L-6003R3 PLA3021A TZB04 TZ03Z500FR169
Contextual Info: DESIGN ENGINEERING KITS CAPACITORS— CHIP MONOLITHIC * • ■ ■ ■ ■ Miniature size Wide capacitance, TC, voltage and tolerance range Industry standard sizes 8mm and 12mm tape and reel for auto-placements Barrier layer termination systems for wave, reflow or vapor

graff Thermal conductance across metal joints

Abstract: ceramic tube amplifier TP-105 TP-118 TP-122 7843
Contextual Info: Return To Product Page 7843 Power Tube Conduction-Cooled UHF Beam Power Tube • • • • Cermolox Construction Oxide-Coated Cathode Conduction Cooled Peak Power Output: 400 MHz - 80 W 1215 MHz-40W BURLE 7843 is a compact, conduction-cooled UHF beam power tube designed for applications where air

SP900

Abstract: N5600
Contextual Info: cer4-9.pdf source 7/24/98 4:38 PM Page 1 SPECTRUM CONTROL INC. yer Electrostatic Discharge ESD proof Available from .05 pF - 5,000 pF Standard voltage range of 50-100 VDC Excellent for Broadband and Microwave Applications Custom sizes, values, shapes, tolerances and highest

TP-105

Abstract: TP-118 TP-122 erie ceramic radiator 0,019
Contextual Info: Return To Product Page 4631 Power Tube Beam Power Tube - Cermolox - Ruggedized - Oxide-Coated Cathode - Forced-Air Cooled - 80 Watts CW Power Output at 400 MHz - 40 Watts CW Power Output at 1215 MHz BURLE 4631 is a compact, forced-air cooled uhf beam power

Royer oscillator circuit diagram

Abstract: PM6064 smps isolated 12v output smps ic smd 8 pin DATA SHEET OF IC 7909 mc34063a step down external transistor 267M1602226 Royer oscillator mullard toroids computer smps circuit diagram
Contextual Info: AP-357 APPLICATION NOTE Power Supply Solutions for Flash Memory MICHAEL EVANS ANIL SAMA BRIAN DIPERT APPLICATIONS ENGINEERING INTEL CORPORATION December 1995 Order Number 292092-002 Information in this document is provided in connection with Intel products Intel assumes no liability whatsoever including infringement of any patent or copyright for sale and use of Intel products except as provided in

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor MRF323 . . . designed primarily for wideband large-signal driver and predriver amplifier stages in the 200-500 MHz frequency range. • Guaranteed Performance at 400 MHz, 28 V

Johanson 2320

Abstract: 565-9065 FERROXCUBE VK200
Contextual Info: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor . . . designed primarily for wideband large-signal output and driver amplifier stages in 100 to 500 MHz frequency range. • Specified 28 Volt, 400 MHz Characteristics —

9200-300-0024

Abstract: 9923-100-6002 9215-300-0025 9932-100-6005 9200-300-0025 9200-300-0022
Contextual Info: EMI SUPPRESSION FILTERS HERM ETICALLY SEALED m u fin tn C T Y P E - S o lder M ount - 1 3961 r r i6 3 5 “ n (2 79', p " I Glass Seal I [ 1=3- .0300 I 76l Potting Leadisl WVDC Min. Full Load Insertion Loss (dB) Current 85°C 125°C | IDC i 10MHz 100MHz | 1GHz

Contextual Info: c erl4-19.pdf source 7/27/98 9:35 AM Page 1 SPECTRUM CONTROL INC. Highest Q chip available 20% performance increase over standard High Q chips on the market Ideal for high performance RF/Microwave applications 500 WVDC High self-resonance Mechanical Capacitance range 1 to 100 pF

MRF327

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF327 NPN Silicon RF Power Transistor . . . designed primarily for wideband large-signal output amplifier stages in the 100 to 500 MHz frequency range. • Guaranteed Performance @ 400 MHz, 28 Vdc Output Power = 80 Watts over 225 to 400 MHz Band

jmc 5201

Abstract: 5659065 565-9065 jmc 5501 56-590-65 VK200-19
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor . . . designed primarily for wideband large-signal output and driver amplifier stages in 100 to 500 MHz frequency range. • • Specified 28 Volt, 400 MHz Characteristics —

ferroxcube 56-590-65

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor MRF323 . . . designed primarily for wideband large-signal driver and predriver amplifier stages in the 20 0 -5 0 0 MHz frequency range. • Guaranteed Performance at 400 MHz, 28 V

jmc 5201

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPH Silicon RF Power Transistor . . . designed primarily for wideband large-signal driver and predriver amplifier stages in 2 0 0 -5 0 0 MHz frequency range. • Guaranteed Performance at 400 MHz, 28 Vdc Output Power = 10 Watts

VK-200-19

Abstract: VK200 ferrite choke
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor MRF326 . . . designed primarily for wideband large-signal output amplifier stages In the 100 to 500 MHz frequency range. • • Guaranteed Performance @ 400 MHz, 28 Vdc Output Power = 40 Watts

vk200 coil

Abstract: FERROXCUBE VK200 jmc 5201
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor . . . designed primarily for wideband large-signal driver and predriver amplifier stages in 2 0 0 -5 0 0 MHz frequency range. • Guaranteed Performance at 400 MHz, 28 Vdc Output Power = 1 0 Watts

5201 IC equivalent

Abstract: MRF326 UG-58
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF326 NPN Silicon RF Power Transistor . . . designed primarily for wideband large-signal output amplifier stages in the 100 to 500 MHz frequency range. 40 W, 225 to 400 MHz CONTROLLED “Q” BROADBAND RF POWER

56-590-65

Abstract: MRF325 jmc 5201 565-9065
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor . . . designed primarily for wideband large-signal output and driver amplifier stages in 100 to 500 MHz frequency range. • Specified 28 Volt, 400 MHz Characteristics — Output Power = 30 Watts