ERIE FEEDTHROUGH Search Results

ERIE ceramic capacitor

Abstract: erie capacitor AM1011-070 AM1011-70 S042 Erie feedthrough
Contextual Info: AM1011-070 . . . . RF & MICROWAVE TRANSISTORS L-BAND AVIONICS APPLICATIONS REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 70 W MIN. WITH 6.7 dB GAIN

Erie feedthrough

Abstract: erie capacitor Electrolytic Capacitor 50v ERIE ceramic capacitor AM1011-070 AM1011-70 S042 FEEDTHRU capacitor ceramic capacitor 4.7 mf 50v
Contextual Info: AM1011-070 . . . . RF & MICROWAVE TRANSISTORS L-BAND AVIONICS APPLICATIONS REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE P OUT = 70 W MIN. WITH 6.7 dB GAIN

erie feedthrough capacitors

Abstract: ERIE ceramic capacitor variable capacitor erie capacitor ERIE ceramic thomson capacitor AM80912-085 S042 CAPACITOR 1500 Erie feedthrough
Contextual Info: AM80912-085 . . . . RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 5:1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE P OUT = 85 W MIN. WITH 7.5 dB GAIN

Contextual Info: 5 7 . SGS-mOMSON A M80912-085 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS REFRACTO RY/G OLD METALLIZATION EM ITTER SITE BALLASTED 5:1 VSW R CAPABILITY LOW THERMAL RESISTANCE IN PU T/O U TPU T MATCHING OVERLAY GEOM ETRY METAL/CERAMIC H ERM ETIC PACKAGE

Contextual Info: SGS-THOMSON :iii g M (gi A M 1011-070 RF & MICROWAVE TRANSISTORS L-BAND AVIONICS APPLICATIONS REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE P out = 70 W MIN. WITH 6.7 dB GAIN

erie feedthrough capacitors

Contextual Info: Btl04/105 40 ns Monolithic CMOS 12-bit D/A Converter • • • • • • • • Product Description Applications Distinguishing Features 40 ns Maximum Settling Time Registered Data Inputs B tl05 ± 1/2 LSB Differential Linearity Error ± 1 LSB Integral Linearity Error

LM 7892

Contextual Info: ,:3j I I I I I C Preliminary Ê K Ë i 11 R S E T M I C R O L N D Y U C S T O T R CAT1 0 4 /CAT1 0 5 12-Bit Monolithic CMOS D/A Converter FEATURES • 40ns Max Settling Time ■ 5ppm/°C Internal Reference ■ Non-Reg istered Data Inputs CAT104 ■ TTL Compatible Inputs

Transistor Equivalent list

Abstract: Transistor AND DIODE Equivalent list capacitor feed-through
Contextual Info: Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR • Interdigitated structure provides high emitter efficiency • Gold metallization realizes very

Transistor Equivalent list

Abstract: diode IN4148 Transistor AND DIODE Equivalent list copper permittivity TRIMMER capacitor by239-800 erie feedthrough capacitors BDT85 IN4148 LXE16350X
Contextual Info: Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VS W R • Interdigitated structure provides high emitter efficiency

diode IN4148

Abstract: Transistor Equivalent list BDT85 IN4148 LXE18300X SC15 1250-003 BY239-800 Transistor AND DIODE Equivalent list
Contextual Info: # I » IK DISCRETE SEMICONDUCTORS SG41EET L X E 1 83 00 X NPN silicon planar epitaxial microwave power transistor Preliminary specification File under Discrete Semiconductors, S C 1 5 January 1992 Philips Semiconductors PHILIPS • b b S B ^ l D03SÜ73 ‘•T‘1 ■

s3331

Contextual Info: DISCRETE SEMICONDUCTORS LXEE18300X NPN silicon planar epitaxial microwave power transistor Preliminary specification File under Discrete Semiconductors, SC15 January 1992 Philips Semiconductors o PHILIPS bt,S3331 0035073 MTS Prelim inary specification PhiMps Semiconductors

erie feedthrough capacitors

Abstract: RPE110Z5U103M50
Contextual Info: Advance Information This document contains information on a product under development. The parametric information contains target parameters and is subject to change. Distinguishing Features Applications • • • • • • • • • • • • •

vk-200 ferrite choke

Abstract: X0187
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN S ilico n RF P o w er T ran sisto r . . . designed for 12.5 Volt UHF large-signal amplifier applications in industrial and commercial FM equipment operating to 512 MHz. • Specified 12.5 Volt, 470 MHz Characteristics —

Contextual Info: Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Very high power gain • Internal input prematching network • Diffused emitter ballasting resistors improve ruggedness • Interdigitated emitter-base structure • Gold metallization with barrier layer

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line N PN Silico n RF Pow er T ran sistor . . designed for 12.5 Volt UHF large-signal amplifier applications in industrial and commercial FM equipment operating to 512 MHz. • Specified 12.5 Volt, 470 MHz Characteristics —

mcd395

Contextual Info: Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Input and output matching cell allows an easier design of circuits • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR

erie capacitor

Abstract: PTB23002U SC15
Contextual Info: Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Very high power gain • Internal input prematching network • Diffused emitter ballasting resistors improve ruggedness • Interdigitated emitter-base structure • Gold metallization with barrier layer

erie feedthrough capacitors

Abstract: philips catalog potentiometer 5130 BDT85 IN4148 LXE16350X SC15 MCD621 6/erie 1250-003
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET LXE16350X NPN microwave power transistor Product specification Supersedes data of November 1994 File under Discrete Semiconductors, SC15 1997 Feb 19 Philips Semiconductors Product specification NPN microwave power transistor

epsilam 10

Abstract: sot446 CMA110 SC1S
Contextual Info: Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR • Interdigitated structure provides high emitter efficiency • Gold metallization realizes very

EUROFARAD capacitor

Abstract: erie 1250-003 EUROFARAD cec EUROFARAD ceramic capacitor
Contextual Info: Philips Semiconductors Product specification NPN microwave power transistor MTB10010U FEATURES QUICK REFERENCE DATA • Input prematching cell allows an easier design of circuits Microwave performance for Tmb = 25 °C in a common base class C narrowband amplifier.

NF4-5V

Abstract: capacitor feed-through ERIE ceramic capacitor
Contextual Info: Philips Semiconductors Product specification NPN microwave power transistor PLB16012U FEATURES QUICK REFERENCEDATA . input matching cell allows an easier design of circuits Microwave performance up to Tmb = 25 °C in a common base class C narrowband amplifier.

erie feedthrough capacitors

Abstract: PLB16012U SC15
Contextual Info: Philips Semiconductors Product specification NPN microwave power transistor PLB16012U FEATURES QUICK REFERENCE DATA • Input matching cell allows an easier design of circuits Microwave performance up to T mb = 25 °C in a common base class C • Diffused emitter ballasting resistors

GL033

Abstract: capacitor feed-through
Contextual Info: Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Input and output matching cells allow an easier design of circuits • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR

EUROFARAD capacitor

Abstract: EUROFARAD cec EUROFARAD MTB10010U SC15 Pulse Capacitor Eurofarad
Contextual Info: Philips Semiconductors Product specification NPN microwave power transistor MTB10010U FEATURES QUICK REFERENCE DATA • Input prematching cell allows an easier design of circuits Microwave performance for Tmb = 25 °C in a common base class C narrowband amplifier.