ERIE REDCAP Search Results

BROADBAND TRANSFORMERS AND POWER

Abstract: erie redcap capacitors MRF317 LINEAR RF AMPLIFIER C band FET transistor s-parameters AN878 MRF317 linear amplifier MRF317 LINEAR RF BOARD erie redcap "common drain" amplifier impedance matching Arco 403
Contextual Info: Order this document by AN878/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN878 VHF MOS POWER APPLICATIONS Prepared by: Roy Hejhall Sr. Staff Engineer INTRODUCTION The assumption is made that the reader is familiar with the types, construction, and electrical characteristics of

MRF321

Abstract: ferroxcube 56-590-65
Contextual Info: TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. The RF Line NPN Silicon MRF321 RF Power Transistor . . . designed primarily for wideband large-signal driver and predriver amplifier stages in 200-500 MHz frequency range.

MRF327

Contextual Info: <^s,m.i-Contiu.ctoi ZPtoauati, Una. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. The RF Line NPN Silicon MRF327 RF Power Transistor . . . designed primarily for wideband large-signal output amplifier stages in the

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor MRF323 . . . designed primarily for wideband large-signal driver and predriver amplifier stages in the 200-500 MHz frequency range. • Guaranteed Performance at 400 MHz, 28 V

VK200 FERRITE

Abstract: MRF329
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF329 The RF Line NPN Silicon RF Power TVansistor . . . designed primarily for wideband large-signal output and driver amplifier stages in the 100 to 500 MHz frequency range. • Specified 28 Volt, 400 MHz Characteristics —

VK-211

Abstract: sd1415 thomson microwave transistor thomson rf power transistor
Contextual Info: S G S —THOMSON OMC D | 7^ 237 □DOGOS'l 7 | O ^^3-/3 ~~r\ SOHO STATE MICROWAVE SD1415 THOMSONCSF COMPONENTS CORPORATION Montgomeryville, PA 18936 • {215 855-8400 ■ TWX 510-661-7299 VHF CO M M UNICATIONS TRANSISTOR DESCRIPTION SSS device type SD1415 is a 12.5 volt epitaxial silicon NPN planar

redcap

Contextual Info: t U na. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 The RF Line NPN Silicon RF Power Transistor MRF329 . . . designed primarily for wideband large-signal output and driver amplifier stages in the 100 to 500 MHz frequency range.

transistor 7808

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Pow er F ield -E ffect Transistor MRF134 N-Channel Enhancement-Mode . . . designed for wideband large-signal amplifier and oscillator applications up to 400 MHz range. • Guaranteed 28 Volt, 150 MHz Performance

MRF323

Abstract: ferroxcube 56-590-65
Contextual Info: , Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 MRF323 Product Image Designed primarily for wideband large-signal driver and predriver amplifier stages in the 200-500 MHz frequency range.

Johanson 2320

Abstract: 565-9065 FERROXCUBE VK200
Contextual Info: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor . . . designed primarily for wideband large-signal output and driver amplifier stages in 100 to 500 MHz frequency range. • Specified 28 Volt, 400 MHz Characteristics —

Motorola AN211

Abstract: motorola 6810 aN211 MOTorola atc 7515
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor N-Channel Enhancement-Mode . . . designed for wideband large-signal amplifier and oscillator applications up to 400 MHz range. • Guaranteed 28 Volt, 150 MHz Performance

jmc 5201

Abstract: 5659065 565-9065 jmc 5501 56-590-65 VK200-19
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor . . . designed primarily for wideband large-signal output and driver amplifier stages in 100 to 500 MHz frequency range. • • Specified 28 Volt, 400 MHz Characteristics —

ferroxcube 56-590-65

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor MRF323 . . . designed primarily for wideband large-signal driver and predriver amplifier stages in the 20 0 -5 0 0 MHz frequency range. • Guaranteed Performance at 400 MHz, 28 V

jmc 5201

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPH Silicon RF Power Transistor . . . designed primarily for wideband large-signal driver and predriver amplifier stages in 2 0 0 -5 0 0 MHz frequency range. • Guaranteed Performance at 400 MHz, 28 Vdc Output Power = 10 Watts

MRF327

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF327 NPN Silicon RF Power Transistor . . . designed primarily for wideband large-signal output amplifier stages in the 100 to 500 MHz frequency range. • Guaranteed Performance @ 400 MHz, 28 Vdc Output Power = 80 Watts over 225 to 400 MHz Band

VK200 ferrite choke

Abstract: jmc 5201
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor . . designed primarily for wideband large-signal output and driver amplifier stages in the 100 to 500 MHz frequency range. • • Specified 28 Volt, 400 MHz Characteristics —

vk200 coil

Abstract: FERROXCUBE VK200 jmc 5201
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor . . . designed primarily for wideband large-signal driver and predriver amplifier stages in 2 0 0 -5 0 0 MHz frequency range. • Guaranteed Performance at 400 MHz, 28 Vdc Output Power = 1 0 Watts

5201 IC equivalent

Abstract: MRF326 UG-58
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF326 NPN Silicon RF Power Transistor . . . designed primarily for wideband large-signal output amplifier stages in the 100 to 500 MHz frequency range. 40 W, 225 to 400 MHz CONTROLLED “Q” BROADBAND RF POWER

56-590-65

Abstract: MRF325 jmc 5201 565-9065
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor . . . designed primarily for wideband large-signal output and driver amplifier stages in 100 to 500 MHz frequency range. • Specified 28 Volt, 400 MHz Characteristics — Output Power = 30 Watts

MRF327

Abstract: 80WF
Contextual Info: MRF327 o I NPN SILICON RF POWER TRANSISTOR . designed primarily stages in the 100-500 o Guaranteed Performance Output Built-in wideband @ 400 MHz, Match with 30:1 Network Metal lization for System for 100–500 Collector-Emitter Voltag~J~I.? Emitter-Base

RF MOSFET

Abstract: MRF134
Contextual Info: tSsmi-donduato'i ZPtoaucti, {Jnc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 The RF MOSFET Line RF Power Field-Effect Transistor N-Channel Enhancement-Mode MRF134 . . designed for wideband large-signal amplifier and oscillator applications up

transistor 0190

Abstract: j301 J298
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor MRF338 Designed primarily for wideband large-signal output and driver amplifier stages in the 400 to 512 MHz frequency range. • Specified 28 Volt, 470 MHz Characteristics

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN S ilico n RF Pow er Tran sisto r MRF326 . . designed primarily for wideband large-signal output amplifier stages in the 100 to 500 MHz frequency range. • Guaranteed Performance @ 400 MHz, 28 Vdc Output Power = 40 Watts

motorola rf Power Transistor mrf317

Abstract: hfc4
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor . . designed primarily for wideband large-signal output amplifier stages in 30 -2 0 0 MHz frequency range. • • Guaranteed Performance at 150 MHz, 28 Vdc Output Power = 100 W