ERM APD Search Results

APD 1300 2,5 GHz

Abstract: JDSU avalanche photodiode ingaas ghz JDSU ERM ingaas apd photodetector apd gain control InGaAs 1550 photodiode transimpedance amplifier jdsu avalanche photodiode avalanche photodiode jdsu photodetector apd dwdm
Contextual Info: Product Bulletin 10 Gb/s Automatic Gain Control AGC APD Receiver Module ERM 598 The ERM 598 is a 10 Gb/s avalanche photodiode receiver with automatic gain control (AGC) for long-haul SONET/SDH OC-192/STM-64 DWDM applications. The receiver module integrates a low capacitance, low dark current

avalanche photodiode receiver

Abstract: JDSU ERM InGaAs apd photodiode ingaas apd photodetector avalanche photodiode ghz InGaAs APD, 10 Gb/s, -30 dBm 877-550-JDSU transimpedance amplifier 7.5 GHz 10 gb APD receiver APD 1550 nm photodetector
Contextual Info: Product Bulletin ERM 598 10 Gb/s Automatic Gain Control AGC APD Receiver Module The ERM 598 is a 10 Gb/s avalanche photodiode receiver with automatic gain control (AGC) for long-haul SONET/SDH OC-192/STM-64 DWDM applications. The receiver module integrates a low capacitance, low dark current

receiver avalanche 1550 fiber 2.5

Contextual Info: Product Bulletin 10 Gb/s Avalanche Photodiode APD Micro Receiver ERM 578 LMx The JDS Uniphase APD Micro Receiver (ERM 578 LMx) is a 10 Gb/s avalanche photodiode receiver in a small form factor package with differential outputs. Consisting of a 10 Gb/s avalanche photodiode and a high gain SiGe

ERM547

Abstract: JDSU Transponder apd receiver 10 gb APD receiver JDSU ERM jdsu apd avalanche photodiode ingaas ghz Photodiode apd high sensitivity jdsu avalanche photodiode jds uniphase receiver
Contextual Info: Product Bulletin 2.5 Gb/s SONET/SDH Mini-DIL Optical Receiver Module ERM 537/547 The JDS Uniphase ERM 537/547 series consists of small form factor SFF 2.5 Gb/s SONET/ SDH optical receivers with InGaAs PIN or avalanche photodiodes and high bandwidth linear transimpedance amplifiers. They are

InGaAs Epitaxx APD

Abstract: Photodiode apd high sensitivity epitaxx apd 10gb avalanche photodiode receiver 578BKX 1550 nm APD optical receivers avalanche photodiode DWDM InGaAs apd photodiode 10 gb APD receiver EPITAXX
Contextual Info: Product Bulletin ERM 578BKX 10 Gb/s Avalanche Photodiode Optical Receiver Module Preliminary Specifications Conditions unless noted : Temperature = 25°C, λ = 1550 nm, RL = 50Ω, Vdd = +8V All specifications without connector. Parameter APD Breakdown Voltage, Vb

InGaAs Epitaxx APD

Abstract: receiver avalanche 1550 fiber 2.5 EPITAXX erm epitaxx apd 10gb 10 gb APD receiver avalanche photodiode ghz avalanche photodiode DWDM InGaAs apd photodiode 10 gb PIN receiver avalanche photodiode receiver
Contextual Info: Product Bulletin ERM 578XCX 10 Gb/s High Gain Avalanche Photodiode Optical Receiver Modules Preliminary Specifications Conditions unless noted : Temperature = 25°C, λ = 1550 nm, RL = 50Ω, Vee = -5.2V All specifications without connector. Parameter APD Breakdown

avalanche photodiode DWDM

Abstract: 1550 nm APD optical receivers
Contextual Info: Product Bulletin ERM 578BKX 10 Gb/s Avalanche Photodiode Optical Receiver Module Preliminary Specifications Conditions unless noted : Temperature = 25°C, λ = 1550 nm, RL = 50Ω, Vdd = +8V Parameter Measurement Conditions Min APD Breakdown Voltage, Vb Id = 10 µA

JDSU ERM

Abstract: k 547 apd 1550, sensitivity 30 dBm transimpedance amplifier 10 GHz ERM547 sc 547 jdsu apd
Contextual Info: COMMUNICATIONS COMPONENTS 2.5 Gb/s Mini-DIL APD Optical Receiver Module ERM 547 Key Features • Small form factor • Butterfly or surface-mount configurations • Differential outputs • Transimpedance gain: - LD: 1500 Ω - HD: 4500 Ω - IHDD: 1800 Ω

InGaAs Epitaxx APD

Abstract: InGaAs apd photodiode Photodiode apd high sensitivity InGaas PIN photodiode, 1550 sensitivity APD bias gain avalanche photodiode receiver InGaAs Epitaxx linear APD, applications, bias supply receiver avalanche 1550 fiber 2.5 10 gb APD receiver
Contextual Info: Product Bulletin ERM 537/547 2.5 Gb/s SONET/SDH Mini-DIL Optical Receiver Module Preliminary Specifications Conditions unless noted : Temperature = 25°C, λ = 1550 nm, RL = 50Ω All specifications without connector. Parameter Responsivity APD PIN Dark Current

578XCX

Abstract: avalanche photodiode bias and high voltage
Contextual Info: Product Bulletin ERM 578XCX 10 Gb/s High Gain Avalanche Photodiode Optical Receiver Modules Preliminary Specifications Conditions unless noted : Temperature = 25°C, λ = 1550 nm, RL = 50Ω, Vee = -5.2V All specifications without connector. Parameter Measurement

InGaAs Epitaxx APD

Abstract: EPITAXX erm EPITAXX erm 577 apd epitaxx EPITAXX InGaAs apd photodiode InGaAs photodiode 100ps 995Mv ERM APD avalanche photodiode receiver
Contextual Info: Product Bulletin ERM 577 2.5 Gb/s High Gain Avalanche Photodiode Optical Receiver Modules Specifications Conditions unless noted : Temperature = 25°C, λ = 1550 nm, RL = 50Ω, Vss = -5.2V All specifications without connector. Parameter Measurement Conditions

InGaAs Epitaxx APD

Abstract: Photodiode apd high sensitivity InGaas APD photodiode, 1550 sensitivity epitaxx apd 10gb datasheet apd epitaxx LC InGaAs avalanche photodiode ghz InGaAs apd photodiode photodiode Avalanche photodiode 40 gb InGaAs 1550 photodiode transimpedance amplifier
Contextual Info: Product Bulletin ERM 578DKX 10 Gb/s High Sensitivity Avalanche Photodiode Optical Receiver Module Preliminary Specifications Conditions unless noted : Temperature = 25°C, λ = 1550 nm, RL = 50Ω, Vdd = +5.7V All specifications without connector. Parameter

JDSU ERM

Abstract: avalanche photodiode free space JDSU avalanche photodiode ingaas ghz avalanche photodiode jdsu 10 gb APD receiver avalanche photodiode ingaas ghz 070AW avalanche photodiode receiver apd 1550, sensitivity 30 dBm InGaAs APD photodiode 1550
Contextual Info: COMMUNICATIONS COMPONENTS 10 Gb/s Avalanche Photodiode APD Micro Receiver ERM 578 LMx Key Features • Sensitivity of -27.3 dBm • TIA gain of 5.5 kΩ (differential) • Very small form factor MSA coplanar package • Low cost • Available with FC, LC or SC connectors

JDSU ERM

Abstract: jdsu apd avalanche photodiode jdsu ingaas apd photodetector photodetector apd dwdm APD 1550 nm photodetector
Contextual Info: Product Bulletin 10 Gb/s Avalanche Photodiode APD High Dynamic Range (HDR) Receiver ERM 528 HDR The JDS Uniphase 10 Gb/s Avalanche Photodiode (APD) High Dynamic Range (HDR) Receiver is a 10 Gb/s APD optical receiver consisting of an APD photodiode, a GaAsHBT TIA, and a

Ge APD

Abstract: J16A-18A-R100U J16A avalanche photodiodes
Contextual Info: J}ò E G zG J U D S O N _ Ge Avalanche Photodiodes APDs 0.8 to 1.5 um Description Multiplication Characteristics T he J16A series G erm anium A va­ lan ch e P hotodiodes are designed for h ig h ­ speed applications a t 800 an d 1300 nm.

C30902EH

Abstract: TO13
Contextual Info: Silicon A valanche Photodiode, * H erm etically sealed packages Si APD—S tan d ard Type Technical Specification Pai D urata C3Ö902EH Photo Standard S e n s Diam. Packag« mm TO-13 T est c o n d itìo n i: T • 2 ? ’C 0.5 Resp. 900 nm A/W Dark Curr. ld nA

Contextual Info: LIGHTWAVE CO M PO N E N TS & MODULES Terminology and Measuring Methods for Detectors 1. ABSOLUTE MAXIMUM RATINGS A bsolute m axim um ratings are lim iting values w hich should not be exceeded under any circum stances. Exceeding th ese ratings m ay lead to im m ediate destruction or p erm anent deterioration of the device.

2.5G APD

Abstract: 5.8 ghz receiver IC
Contextual Info: PS5931 Front-end Receiver Description T he PS5931 is a front-end receiver. Features • H igh speed operation up to 2.5G b/s • H erm etically sealed, 14-pin low profile butterfly package • Internal G aA s p re-am plifier IC • T ransim pedance 600 to 10 0 0 ÎÎ

Lem LT 300 - t

Abstract: NDL5200 L5104
Contextual Info: N E C h2E D ELECTRONICS INC • b427525 0030074 22T M N E C E PRELIMINARY DATA SHEET NEC PHOTO DIODE NDL5103P, NDL5103P1 ELECTRON DEVICE 1 300 nm OPTICAL FIBER COM M UNICATIONS <t>50 G ERM AN IU M A V A LA N CH E PHOTO DIODE M O DULE DESCRIPTION NDL5103P and NDL5103P1 are Germanium Avalanche Photo Diodes with optical fiber, especially designed for detectors of

Contextual Info: N E C ELECTRONICS INC b5E D • b42752S 003Ô07Û T7S H N E C E DATA SHEET |\|E C Z PHOTO DIODE NDL5104P, NDL5104P1 E U C T H O N D E V IC E 1 300 nm OPTICAL FIBER COM M UNICATIONS <t>1 0 0 am G ERM ANIUM AVALAN CH E PHOTO DIODE M OD ULE D E S C R IP T IO N

Contextual Info: Silicon PIN Chip and Packaged Diodes EEBAIph APD Series Features • Switch and Attenuator Applications ■ Voltage Ratings to 1000 Volts ■ Low Rs and Low Capacitance Designs ■ Surface Mount Microwave Packages ■ Tightly Controlled PIN Characteristics

InGaAs Epitaxx APD

Abstract: avalanche photodiodes InGaas APD detector, 1550 sensitivity epitaxx APD photovoltaic receiver 1550 InGaAs apd photodiode Si apd photodiode 10 gb APD receiver apd 1550 rise time, dark, capacitance EPITAXX erm 577
Contextual Info: Erik Jonsson School of Engineering & Computer Science The University of Texas at Dallas OPTICAL DETECTORS AND RECEIVERS Notes prepared for EE 6310 by Professor Cyrus D. Cantrell August–December 2003 c C. D. Cantrell 06/2003 The University of Texas at Dallas

Contextual Info: FLAT PANEL PLASMA DISPLAY MODULE MODEL APD-192G088 192 by 88 graphics display with drive electronics The APD-192G088 display module is a full field dot matrix display with 192 columns and 88 rows. It includes drive electronics designed to interface easily with C R T

DALE RESISTOR NETWORKS

Abstract: Mil-T-23648 m8340102 APD-256M026-1 APD-222G007 CRCW DALE APD-256M026 APD-480M021-1
Contextual Info: A C O M PA N Ÿ OF G eneral Index/S urface Mount Index T hick Film Resistor N etw orks, Resistor/Capacitor Netw orks, C apacitor N etw o rks, Ladder N etw orks and Custom Phone: 402 371 -0080 Dale Phone: (818) 781-1642 Dale, Techno Division M83401/04, 05,06, 07, 08, 09, resistor