ERVDS Search Results

Contextual Info: ESE D N AMER PHILIPS/DISCRETE bbSETEl 0QE0M70 5 • BUK454-500A BUK454-500B PowerMOS transistor ■■■■■a T"- 3 7 - U GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

mt4c1024dj7

Abstract: mt4c1024dj-7
Contextual Info: |v > ll = R O MT4C1024 L 1 MEG X 1 DRAM Í\J DRAM 1 MEG X 1 DRAM LOW POWER, EXTENDED REFRESH O 3J > FEATURES PIN ASSIGNMENT (Top View • Industry standard x l pinout, timing, functions and packages • High-performance, CM OS silicon-gate process • Single +5V ±10% power supply