ES SC74 Search Results

EEFSX0D331EY

Abstract: aj24 diode fairchild MLB-201209-0120P-N2 RS482M RTL8101L smd diode S4 69a IXP450(218S4PASA12G)SB450 transistor C636 foxconn X8A01431AFI1H
Contextual Info: 5 4 3 2 1 First International Computer,Inc D D Protable Computer Group C HW Department Board name : Mother Board Schematic 1. Schematic Page Description : Project : KR2W_K8_ATI RS482M+SB450 2. PCI & IRQ & DMA Description : Version : 0.1 ES 3. Block Diagram :

xgold

Contextual Info: TVS Diodes Transient Voltage Suppressor Diodes ES D3 V3U 4 U L C Ultra Low Capacitance ESD Array ESD3V3U4ULC Data Sheet Revision 0.9, 2010-10-14 Preliminary Industrial and Multi-Market Edition 2010-10-14 Published by Infineon Technologies AG 81726 Munich, Germany

SCHEMATIC DIAGRAM OF POWER factor controller DEVI

Abstract: BCR450 AN105 infineon TDA4863 application note TDA4863G led constant current driver 110v, 350mA EVALLED-TDA4863-40W transformer 230V 16V 350mA AN186 90V, 350mA LED driver
Contextual Info: BCR4 50, TDA48 63 40W LED Street an d Ind oor li ghtin g de mons trator boa rd Application Note AN186 Revision: 1.0 Date: 18.12.2009 www.infineon.com/lighting RF and Protecti on Devi c es Edition 18.12.2009 Published by Infineon Technologies AG 81726 Munich, Germany

MA129

Abstract: MA6X129
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Rectifier Diodes MA6X129 (MA129) Silicon epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 1.50+0.25 –0.05 ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo ol

GN01038B

Contextual Info: GaAs MMICs GN01038B GaAs IC with built-in ferroelectric For the preamplifier of the transmitting section in a cellular phone unit: mm +0.2 2.8 –0.3 +0.25 0.65±0.15 1 +0.2 2.9 –0.05 1.9±0.1 0.95 0.95 +0.1 ue pl d in an c se ed lud pl vi an m m es si

GN01067

Contextual Info: GaAs MMICs GN01067B GaAs IC with built-in ferroelectric For the preamplifier of the transmitting section in a cellular phone unit: mm +0.2 +0.25 0.65±0.15 1 +0.2 2.9 –0.05 1.9±0.1 0.95 0.95 ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo

2SC2404

Abstract: XN06534 XN6534
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN06534 (XN6534) Silicon NPN epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 6 3 2 1 (0.65) ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo

GN01068B

Contextual Info: GaAs MMICs GN01068B GaAs IC with built-in ferroelectric For preamplifier of the PDC transmitting section unit: mm • Features +0.2 +0.25 1.5 –0.05 0.65±0.15 1 +0.2 2.9 –0.05 1.9±0.1 0.95 0.95 +0.1 ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo

Contextual Info: GaAs MMICs GN01064B GaAs IC with built-in ferroelectric Variable gain amplifier for a cellular phone unit: mm +0.2 +0.25 0.65±0.15 1 +0.2 2.9 –0.05 1.9±0.1 0.95 0.95 ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l ht low disc dis ena ten low

MA125

Abstract: MA6X125
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Switching Diodes MA6X125 (MA125) Silicon epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 6 ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l ht low disc dis ena ten low

Contextual Info: GaAs MMICs GN02023B GaAs IC with built-in ferroelectric Mixer with local amplifier for cellular phone unit: mm +0.2 +0.25 0.65±0.15 1 +0.2 2.9 –0.05 1.9±0.1 0.95 0.95 ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l ht low disc dis ena ten low

GN02022B

Contextual Info: GaAs MMICs GN02022B GaAs IC with built-in ferroelectric Mixer with local amplifier for cellular phone unit: mm +0.2 +0.25 0.65±0.15 1 +0.2 2.9 –0.05 1.9±0.1 0.95 0.95 ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l ht low disc dis ena ten low

GN01046B

Contextual Info: GaAs MMICs GN01046B GaAs IC with built-in ferroelectric For front-end amplifier of the PHS receiving section unit: mm +0.2 +0.25 0.65±0.15 1 +0.2 2.9 –0.05 1.9±0.1 0.95 0.95 ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l ht low disc dis ena ten low

Contextual Info: GaAs MMICs GN01058B GaAs IC with built-in ferroelectric Dual band-capable Low Noise Amplifier LNA for PDC unit: mm +0.2 +0.25 0.65±0.15 1 +0.2 2.9 –0.05 1.9±0.1 0.95 0.95 ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l ht low disc dis ena ten low

gn01071b

Contextual Info: GaAs MMICs GN01071B GaAs IC with built-in ferroelectric Low-noise amplifier for CDMA unit: mm +0.2 +0.25 0.65±0.15 1 +0.2 2.9 –0.05 1.9±0.1 0.95 0.95 ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l ht low disc dis ena ten low tp in o co n an in

GN02019B

Abstract: nf 820
Contextual Info: GaAs MMICs GN02019B GaAs IC with built-in ferroelectric Local amplifier for cellular phone For a mixer amplifier unit: mm +0.2 +0.25 0.65±0.15 1 +0.2 2.9 –0.05 1.9±0.1 0.95 0.95 ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l ht low disc dis ena ten low

Contextual Info: L ifm TECHNOLOGY LTC 1517-3.3 M icropow er, R eg u late d 3.3V C h a rg e Pum p in a 5-Pin SOT-23 P a c ka g e FEATU R ES D C S C R IP TIO fl • Ultra low Power: Ice = &MA Typ ■ Short-Circuit/Thermal Protected ■ 3.3V ±4% Regulated Output ■ V|\j Range: 2V to 4.4V

ERI - 35 - 2 YE 0515

Abstract: transistor 2SC2458 diode marking YF RN1241A TRANSISTOR MARKING YB MQ SC-62 2SA1314 2SC3326
Contextual Info: [ 1 ] Quick Selector by Type [2 ] Quick Selector Guide OI 1. Quick Selector by Type [2 ] Quick Selector Guide 1. Quick Selector by Type [2 ] Quick Selector Guide E E E E 1. Quick Selector by Type Equivalent Circuit [2 ] 2. Package Types 18 Quick Selector Guide

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN01601 (XN1601) Silicon PNP epitaxial planar type (Tr1) Silicon NPN epitaxial planar type (Tr2) Unit: mm M Di ain sc te on na tin nc ue e/ d 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN04601 (XN4601) Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) Unit: mm M Di ain sc te on na tin nc ue e/ d 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN04609 (XN4609) Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) M Di ain sc te on na tin nc

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN05601 (XN5601) Silicon PNP epitaxial planar type (Tr1) Silicon NPN epitaxial planar type (Tr2) Unit: mm M Di ain sc te on na tin nc ue e/ d 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95)

Contextual Info: Composite Transistors XN04390 Silicon NPN epitaxial planer transistor Tr1 Silicon PNP epitaxial planer transistor (Tr2) Unit: mm M Di ain sc te on na tin nc ue e/ d 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 3 2 1 0.30+0.10 –0.05 di p Pl lan nclu ea e se

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN04315 (XN4315) Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) Unit: mm M Di ain sc te on na tin nc ue e/ d 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95)