ESA Search Results

texas instruments tip32

Abstract: tip 31c til 31a texas instruments tip31 TIP31C
Contextual Info: TYPES TIP31, TIP31A, TIP31B. TIP31C N-P-N SINGLE-DIFFUSED M ESA SILICON POWER TRANSISTORS 3JCDH m C -< FOR POWER-AMPi-IFIER AND HIGH-SPEED-SWITCHING APPLICATIONS DESIGNED FOR COMPLEMENTARY USE WITH TIP32, TIP32A, TIP32B, TIP32C u r T> r r m > mw J jH • 40 W at 25°C Case Temperature

BU208 toshiba

Abstract: BU208
Contextual Info: TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA Sb <DI S C R E T E / O P T O aoL ß F J c]Dt:]7aS0 O O O ñ G T ñ 3 Oö U 9 8 ûT-33~<97 SILICON NPN TRIPLE DIFFUSED M ESA TYPE COLOR TV HORIZONTAL OUTPUT APPLICATIONS. Unit in mm COLOR TV SWITCHING REGULATOR APPLICATIONS.

DTC144

Contextual Info: DTC144 EM/EE/EUA/ECA/ESA NPN Small Signal Transistor Small Signal Diode Features —Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistor see equivalent circuit . —The bias resistors consist of thin -film resistors with

C8450

Abstract: 952100201 100203
Contextual Info: T em ic see S em ico n d u cto rs SCC Reference List ESA/SCC Specifications SCC Number Features TEMIC Fart Number Package S C C 930I01501 85 ns 50 u A 2K x8 SR A M H M C -6 5 1 6 2 E S C C 930Ì01502 85 ns 5 0 p A 2Kx8 SR A M H M 4 -6 5 Í6 2 E LCC32 S C C 930101503

Contextual Info: Te m ic BYT86/1300 TELEFUNKEN Semiconductors Fast Recovery Silicon Power Rectifier Features • M ultiple diffusion • M esa glass passiv ated • L ow sw itch on p o w e r losses • G o o d soft reco v ery b e h a v io u r • F ast forw ard reco v ery tim e

Q62702-A118

Contextual Info: SIEMENS HiRel Silicon Schottky Diode BAT 15 Features • HiRel Discrete and Microwave Semiconductor • Medium barrier diodes for detector and mixer applications • Hermetically sealed microwave package • qualified • ESA/SCC Detail Spec. No.: 5106/014

transistor c118

Abstract: 2N6259 equivalent 2n6258 2N6258 equivalent 2n6259
Contextual Info: i?[M [5)y Tr -Jfotitron M ED IU M TO HIGH V O L T A G E Devices. Inc CHIP NUM BER 4 NPN SINGLE DIFFUSED M ESA TRANSISTOR FORMERLY 49) CONTACT METALLIZATION B ase, Emitter and Collector Solder C oated 9 5 /5 % lead /tin. ASSEMBLY RECOMMENDATIONS .300” It is advisable that:

E5 ic

Abstract: 2SD1479 SC-65 TOP3 package
Contextual Info: Power Transistors 2SD1479 2SD 1479 Silicon N PN Triple-D iffused Junction M esa Type Package D im ensions Horizontal D eflection O utput U n it ! m m 1 5 .5 m a x • Features 4 .7 m a x . • High breakdow n voltage and high reliability by glass passivation

ESAC33-02CS

Abstract: esac33 ESAC33-02C
Contextual Info: ESAC33-02CS 10A • Outline Drawing SOFT RECOVERY SUPER HIGH SPEED ■ Features • Soft recovery, low noise • High reliability ■ Applications • High speed power switching ■ Maximum Ratings & Characteristics • Absolute Maximum Ratings Items Symbols

ESAC92-02B

Abstract: Collmer SC
Contextual Info: ESAC92-02B 16A • Outline Drawing l o w l o s s s u p e r h ig h s p e e d r e c t i f i e r ■ Connection Diagram ■ Features • Lo w V f • Super high speed switching r>H H«-n !> • High reliability by planer design ■ Applications i■ X • High speed power switching

ESAC34M-02C

Abstract: Esac34
Contextual Info: ESAC34M-02C 10A • Outline Drawing s o f t r e c o v e r y s u p e r h ig h s p e e d TO-220F ■ Features ■ Connection Diagram • Insulated package by fully molding • Soft recovery, low noise • High reliability ■ Applications • High speed power switching

ESAB92-02

Contextual Info: ESAB92-02 5A M Outline Drawing LOW LOSS SUPER HIGH SPEED RECTIFIER • Features • Lo w V f • Super high speed switching • High reliability by planer design I— ■ Applications ► f— (» • High speed power switching 'b IH d> 4 (5 GD ■ Maximum Ratings & Characteristics

Contextual Info: Thomas&Betts D-Subminiature CONNECTOR S S T•? ImF iM l l %S # i T able of C D-Subminiature J, ,yft, ontents . I 294-332 f4r*“ TM PCB Short Sofder Tail L e a d s . 308-311 High Density V esa-VG A. 312-315

Contextual Info: ESAIpha Monolithic Series-Shunt Element Silicon Chip S S E 3 7 9 2 -0 0 0 Features • Rugged Silicon Monolithic Design ■ 26 GHz Multi-Throw Switch Operation ■ 0.019 pF Typical Series Junction, 0.10 pF Typical Shunt Junction ■ 5 ns Switching Time ■

ESAD85M-009

Abstract: i184
Contextual Info: ESAD85M-009 25A H Outline Drawing scHOTTKY b a r r i e r d io d e Connection Diagram • Features • Insulated package by fully molding • Lo w V f • Super high speed switching • High reliability by planer design ■ Applications • High speed power switching

ESAC92-03

Abstract: esac92
Contextual Info: ESAC92-03 10A • Outline Drawing l o w lo s s s u p e r high speed r e c t i f i e r ¿3 6 • 0 ? Connection Diagram ■ Features • Lo w V f • Super high speed switching • High reliability by planer design ■ Applications • High speed power switching

2sc3211

Abstract: 2SC3211A
Contextual Info: Power Transistors 2SC3211, 2SC3211A 2SC3211, 2SC3211A Silicon N P N Triple-D iffused Junction M esa Type P ackage Dim ensions High Breakdown Voltage, High Speed Switching • F eatures • • • • Unit ! mm 5.2max. 3.2 , 15.5 m ax. . 6.9min. High speed switching

Li-116

Abstract: ESAD83-006
Contextual Info: ESAD83-006 30A Outline Drawing SCHOTTKY BARRIER DIODE r ¡3 0 «0 Û M ! Z l “4 fl] ? LU I 22 I 6 T rr Is OS- TO-3P Connection Diagram • Features • II Lo w V f • Super high speed switching • High reliability by planer design ■ Applications • High speed power switching

ESAC82M-004

Contextual Info: ESA C 8 2 M -004 1OA : O utline Draw ings SCHO TTKY BARRIER D IO D E I Features Insulated pa ckag e by fu lly m o ld in g . • te V F m nm m m Lo w V F • X -f Connection Diagram C j* l' S u p e r high speed s w itc h in g . H igh reliab ility by plane r d e s ig n .

G503

Contextual Info: Extract from the online catalog PSR-SCP- 24UC/ESA4/2X1/1X2 Order No.: 2963750 Safety relay to emergency stop and safety door monitoring up to SIL 3 or Cat. 4, PL e according to EN ISO 13849, one- or two-channel

C7G M

Abstract: 223B ESAC82-004K esac82
Contextual Info: ESAC82-004K 15A Outline Drawing SCHOTTKY BARRIER DIODE • Features • Lo w V f • Super high speed switching • High reliability by planer design ■ Applications • High speed power switching ■ Maximum Ratings & Characteristics • Absolute Maximum Ratings

ESAC85-009

Abstract: iism DIODE 6AA
Contextual Info: ESAC85-009 10A • Outline Drawing SCHOTTKY BARRIER DIODE ■ Features • Lo w V f • Super high speed switching • High reliability by planer design ■ Applications • High speed power switching ■ Maximum Ratings & Characteristics • Absolute Maximum Ratings

ESAC39M

Abstract: esac39
Contextual Info: ESAC39M C,N,D (5A) H Outline h ig h v o l t a g e s u p e r h ig h s p e e d Drawing 4 .5 , 2.0 TO-220F • Features ■ Connection Diagram • Insulated package by fully molding • LowVp • Super high speed switching ESAC39M-DDC 0 ) o -i /2 > - o '3 j

2SC3212

Abstract: 2SC3212A
Contextual Info: 2SC3212, 2SC32T2A Power Transistors 2SC3212, 2SC3212A Silicon NPN Triple-Diffused Junction M esa Type P ackage Dim ensions High B reakdown V o ltage, High Sp eed Switching • Features Unit ! mm 5.2max. 15.5max. 6.9min. • H igh s p e e d sw itch in g I*