ESD Z10 Search Results

3.2 v zener diode

Abstract: 10v ZENER DIODE 20 kV ZENER DIODE DIODE ZENER X
Contextual Info: WT-Z106P-AU4-14 Zener Diode Chips for ESD Protection 1. Feature: 1-1 Silicon Zener diode chips for electrostatic discharge ESD protection application 1-2 This specification applies to P-Type silicon Zener diode chipDevice NO:WT-Z106P-AU4-14 2. Structure:

zener diode

Abstract: WT-Z108N
Contextual Info: WT-Z108N Zener Diode Chips for ESD Protection 1. Feature: 1-1 Silicon Zener diode chips for electrostatic discharge ESD protection application 1-2 This specification applies to N-Type silicon Zener diode chip Device NO:WT-Z108N 2. Structure: 2-1 Planar type: Silicon Diode

Contextual Info: WT-Z108P Zener Diode Chips for ESD Protection 1. Feature: 1-1 Silicon Zener diode chips for electrostatic discharge ESD protection application 1-2 This specification applies to P-Type silicon Zener diode chip Device NO:WT-Z108P 2. Structure: 2-1 Planar type: Silicon Diode

Contextual Info: WT-Z108N-4 Zener Diode Chips for ESD Protection 1. Feature: 1-1 Silicon Zener diode chips for electrostatic discharge ESD protection application 1-2 This specification applies to N-Type silicon Zener diode chip Device NO:WT-Z108N-4 2. Structure: 2-1 Planar type: Silicon Diode

3.2 v zener diode

Contextual Info: WT-Z108P-AU Zener Diode Chips for ESD Protection 1. Feature: 1-1 Silicon Zener diode chips for electrostatic discharge ESD protection application 1-2 This specification applies to P-Type silicon Zener diode chip Device NO:WT-Z108P-AU 2. Structure: 2-1 Planar type: Silicon Diode

um 54 diode

Abstract: zener diode chip 3.2 v zener diode
Contextual Info: WT-Z108N-AU Zener Diode Chips for ESD Protection 1. Feature: 1-1 Silicon Zener diode chips for electrostatic discharge ESD protection application 1-2 This specification applies to N-Type silicon Zener diode chip Device NO:WT-Z108N-AU 2. Structure: 2-1 Planar type: Silicon Diode

zener diode chip

Abstract: WT-Z108P-AU4
Contextual Info: WT-Z108P-AU4 Zener Diode Chips for ESD Protection 1. Feature: 1-1 Silicon Zener diode chips for electrostatic discharge ESD protection application 1-2 This specification applies to P-Type silicon Zener diode chip Device NO:WT-Z108P-AU4 2. Structure: 2-1 Planar type: Silicon Diode

WT-Z108P

Contextual Info: WT-Z108P-4 Zener Diode Chips for ESD Protection 1. Feature: 1-1 Silicon Zener diode chips for electrostatic discharge ESD protection application 1-2 This specification applies to P-Type silicon Zener diode chip Device NO:WT-Z108P-4 2. Structure: 2-1 Planar type: Silicon Diode

3.2 v zener diode

Abstract: 105um DIODE ZENER X
Contextual Info: WT-Z106P-4-12 Zener Diode Chips for ESD Protection 1. Feature: 1-1 Silicon Zener diode chips for electrostatic discharge ESD protection application 1-2 This specification applies to P-Type silicon Zener diode chipDevice NO:WT-Z106P-4-12 2. Structure: 2-1 Planar type: Silicon Diode

z106

Abstract: DIODE ZENER X
Contextual Info: WT-Z106P-4-14 Zener Diode Chips for ESD Protection 1. Feature: 1-1 Silicon Zener diode chips for electrostatic discharge ESD protection application 1-2 This specification applies to P-Type silicon Zener diode chipDevice NO:WT-Z106P-4-14 2. Structure: 2-1 Planar type: Silicon Diode

3.2 v zener diode

Abstract: diode zener protection ZENER 5V diode Zener LED zener diode WT-Z105P-AU4 DIODE ZENER X
Contextual Info: WT-Z105P-AU4 Zener Diode Chips for ESD Protection 1. Feature: 1-1 Silicon Zener diode chips for electrostatic discharge ESD protection application 1-2 This specification applies to P-Type silicon Zener diode chip Device NO:WT-Z105P-AU4 2. Structure: 2-1 Planar type: P/N Diode

std883

Abstract: Zener diode DIODE ZENER X
Contextual Info: WT-Z106N-AU4 Zener Diode Chips for ESD Protection 1. Feature: 1-1 Silicon Zener diode chips for electrostatic discharge ESD protection application 1-2 This specification applies to N-Type silicon Zener diode chip Device NO:WT-Z106N-AU4 2. Structure: 2-1 Planar type: N/P Diode

YPBL-Z103T

Contextual Info: POWER Module 1 YPBL-Z103T Module Spec • PICTURE ■ FEATURES Built-in Standalone battery capacity monitoring and reporting Single-line communication support Over-charge/discharge voltage and current protection Short-circuit protection ESD Protected : IEC 61000-4-2 Level 4

YPBL-Z101A

Contextual Info: POWER Module 1 YPBL-Z101A Module Spec • PICTURE ■ FEATURES Built-in High-Accuracy detector Over-charge/discharge voltage and current protection Short-circuit protection Low on-state internal resistance : TPY. 50 mΩ 3 V, 1 A ESD Protected : IEC 61000-4-2(Level 4)

zener 5A6 ON

Abstract: zener 5A6 5a6 dual zener diode 5A6 zener zener 9A1 5a6 zener diode 5A6 marking code Z10V marking code 5A6 sot 26 6A8 SOT-23
Contextual Info: MMBZ5V6A Series Dual Common Anode Zener TVS Features: *Allows Either Two Separate Unidirectional Configuations or a Single Bidirectional Configuations. *Low Leakage Current. *24-40 Watts Peak Power Protection. *Excellent Clamping Capability. *ESD Rating of Class N exceeding 16KV per the Human Body Model.

J-STD-020B

Abstract: PD55003L
Contextual Info: PD55003L RF POWER TRANSISTORS The LdmoST Plastic FAMILY N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 3 W with 17 dB gain @ 500 MHz / 12.5 V • NEW LEADLESS PLASTIC PACKAGE • ESD PROTECTION

PD55003L

Abstract: ST 0721 702 TRANSISTOR smd J-STD-020B PD55003L-E SMD electrolytic capacitor ferride bead
Contextual Info: PD55003L-E RF POWER TRANSISTOR The LdmoST Plastic FAMILY General features • Excellent thermal stability ■ Common source configuration ■ POUT =3W mith 17dB gain@500MHz/12.5V ■ New leadless plastic package ■ Esd protection ■ Supplied in tape & reel of 3K units

J-STD-020B

Abstract: PD55003L
Contextual Info: PD55003L RF POWER TRANSISTORS The LdmoST Plastic FAMILY N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 3 W with 17 dB gain @ 500 MHz / 12.5 V • NEW LEADLESS PLASTIC PACKAGE • ESD PROTECTION

Zener diode DW

Abstract: zener diode z10 TPIC2202 TPIC2322L SLIS032 tpic6a595 sd TPIC1321L TPIC2301 TPIC3322L 088-M
Contextual Info: TPIC1321L 3-HALF H-BRIDGE GATE-PROTECTED LOGIC-LEVEL POWER DMOS ARRAY SLIS042 – NOVEMBER 1994 • • • • • • Low rDS on . . . 0.35 Ω Typ Voltage Output . . . 60 V Input Protection Circuitry . . . 18 V Pulsed Current . . . 4 A Per Channel Extended ESD Capability . . . 4000 V

Contextual Info: STEWART CONNECTOR SYSTEMS INC. , R R 2, BOX 2020 GIEN BOCK, PENNSYLVANIA 17327 "NOT PRESENTLY TOOLED’ PART NO.: SS-668804S-A-N F-1-AB EMI-RFI ONE PIECE SHIELDED, ESD GROUNDED 4 PORT PCB HARMONICA JACK PAC " - N r NON-FLANGE ’ - r SIDE SOLDER TAILS ARE ON .180 [4.57] CENTERS

10 35L

Abstract: picture in picture chip YPBL-Z103A
Contextual Info: POWER Module 1 YPBL-Z103A Module Spec • PICTURE ■ FEATURES Built-in High-Precision monitor with Alerts Data-acquisition, information-storage, and safety monitoring Remaining capacity estimation Single-line communication support Over-charge/discharge voltage and current protection

XZ1002-BD-000V

Abstract: xz1002-bd mmic core chip Z1002-BD XZ100 1521e Mimix Broadband m11
Contextual Info: 8.5-11.0 GHz GaAs MMIC Core Chip Z1002-BD March 2009 - Rev 11-Mar-09 Features General Description The XZ1002-BD is a highly integrated dual path transmit/receive 3 port core chip. It is designed for applications operating within the 8.5 to 11.0 GHz range. The core consists of integrated transmit/receive

600w class d circuit diagram schematics

Abstract: TM 1628 IC SCHEMATICS DIAGRAM P6KE200A equivalent 30F126 AP6KE300CA diode P6KE 100 A TISPA79R241 SMBJ40A/CA-TR ZP1400 1SMB5.0CAT3
Contextual Info: ASD and Discrete Products PROTECTION Devices and IPADs™ Improving the Immunity of your System Designer’s Selection Guide USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED. STMicroelectronics PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL

GRM55DR61H106KA88B

Abstract: freescale gps ATC600B5R6BT500XT AN1955 C1825C103J1RAC 145170
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S24140H Rev. 4, 2/2012 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF6S24140HR3 MRF6S24140HSR3 Designed primarily for large-signal output applications at 2450 MHz. Devices