ETERS11 Search Results

Contextual Info: Thp% H E W L E T T WLUM P A C K A R D Low N oise, Cascadable Silicon Bipolar MMIC Amplifier Technical Data INA-01100 Features • Cascadable 50 Q Gain Block • Low N oise Figure: 1.7 dB Typical at 100 MHz • High Gain: 32.5 dB Typical at 100 MHz • 3 dB Bandwidth:

MSA0300-GP4

Contextual Info: What H E W L E T T * mLliM P A C K A R D Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-0300 Features • Cascadable 50 Q. Gain Block • 3 dB Bandwidth: DC to 2.8 GHz • 12.0 dB Typical Gain at 1.0 GHz • 10.0 dBm Typical Px¿a at 1.0 GHz

Contextual Info: What H E W L E T T * mLliM PACKARD Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-0885 Features • Usable Gain to 6.0 GHz • High Gain: 3 2.5 dB Typical at 0.1 GHz 2 2 .5 dBTypicalat 1.0 GHz • Low Noise Figure: 3.3 dBTypicalat 1.0 GHz • Low Cost Plastic Package

AN-S009

Contextual Info: What H E W L E T T * mLliM P A C K A R D Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-0500 Features • Cascadable 50 Q. Gain Block • High Output Power: + 23 dBm Typical Pi ^ at 1.0 GHz • Low Distortion: 33 dBm Typical IP3at 1.0 GHz • 8.5 dB Typical Gain at

HP MMIC INA

Contextual Info: What HEWLETT* mLliM PACKARD Low N oise, Cascadable Silicon Bipolar MMIC Amplifier Technical Data INA-01100 Features • Cascadable 50 Q. Gain Block • Low Noise Figure: 1.7 dB Typical at 100 MHz • High Gain: 3 2.5 dB Typical at 100 MHz • 3 dB Bandwidth:

Contextual Info: W hat H EW LETT* mLliM PACKARD Cascadable Silicon Bipolar MMIC Amplifiers Technical Data MSA-0700 F e atu res • C ascad able 50 Q. G ain Block • Low O perating Voltage: 4.0 V Typical Vd • 3 dB Bandw idth: DC to 2.5 GHz • 13.0 dB Typical G ain at 1.0 GHz

4447 surface mounted diode

Abstract: MGA-82563
Contextual Info: Who m L'tiI M HEWLETT PACKARD 0 .1 -6 GHz 3 V, 17 dBm Amplifier Technical Data MGA-82563 F ea tu res • +17.3 dBm Px dB at 2.0 GHz Surface M ount Package SOT-363 S C -70 +20 dBm Psat at 2.0 GHz • Single +3V Supply • 2.2 dB N oise Figure at 2.0 GHz • 13.2 dB Gain at 2.0 GHz

Contextual Info: PRELIMINARY f ¡ J P E R I C O M PI74FCT163501T Fast CMOS 18-Bit Registered Transceivers Product Features: Product Description:

MARKING A2a SOT363

Contextual Info: W ho1 H E W LE T T mLftM P A C K A R D 3.0 GHz Low Noise Silicon MMIC Amplifier Technical Data INA-54063 Features • Ultra-Miniature Package Surface Mount Package SOT-363 SC -70 Description Pin Connections and Package Marking With its wide bandwidth and high

Contextual Info: What H E W L E T T * mLliM P A C K A R D Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-0886 Features D escription • Usable Gain to 5.5 GHz • High Gain: The MSA-0886 is a high perfor­ m ance silicon bipolar Monolithic Microwave Integrated Circuit

Contextual Info: What h e w i-ETT mL'KMPACKARD Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-1000 F eatures • High Output Power: +27 dBm Typical at 1.0 GHz • Low Distortion: 37 dBm Typical IP3 at 1.0 GHz • 8.5 dB Typical Gain at 1.0 GHz • Impedance Matched to 25 Q

Contextual Info: Thal 1 "UM HEWLETT PACKARD Cascadable Silicon Bipolar MMIC Amplifier Technical Data M SA-1100 F eatures combining low noise figure with high IP3. Typical applications include narrow and broadband linear amplifiers in industrial and military systems. • High Dynamic Range

HFET-2202

Abstract: NOISE MICROWAVE GaAS HFET-2202 NOISE FIGURE HPAC-100A S2112
Contextual Info: - C OM PON EN TS HFET-2202 GaAs FETs LOW NOISE MICROWAVE GaAS FET H E W L E T T P A C KA R D • Features LOW NOISE FIGURE 1.1 dB Typical NF at 4 GHz, 1.4 dB Maximum 1.9 dB Typical NF at 8 GHz a HIGH ASSOCIATED GAIN 13.6 dB Typical Ga at 4 GHz, 12.0 dB Minimum

14CL 40

Abstract: ET1102 et 1102 HFET-1101 HFET-1102 2N6680 HPAC-100A HFET1102 14cl ET 2314
Contextual Info: NEW 2N6680 H E W L E T T PACKARD HFET-1101 HFET-1102 MICROWAVE GaAS FETS GaAs FETs COMPONENTS Features LOW NOISE FIGURE 1.6 dB Typical at 4 GHz (2N6680) 1.7 dB Maximum at 4 GHz (HFET-1102) 1.5 dB Typical HIGH GAIN 16 dB Typical at 4 GHz a HIGH OUTPUT POWER

Shunt Resistor 6432

Abstract: EM 236
Contextual Info: What H E W L E T T * m L liM PACKARD Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-0900 Features • Broadband, Minimum Ripple Cascadable 50 Q. Gain Block • 8.0 ± 0.2 dB Typical Gain Flatness from 0.1 to 4.0 GHz • 3 dB Bandwidth: 0.1 to 6.0 GHz

MSA-1000-GP4

Abstract: MSA-1000
Contextual Info: What H E W L E T T * mLliM P A C K A R D Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-1000 Features • High Output Power: + 27 dBm Typical Pi ^ at 1.0 GHz • Low Distortion: 3 7 dBm Typical IP3 at 1.0 GHz • 8.5 dB Typical Gain at 1.0 GHz

Contextual Info: PRELIMINARY y P E R I C 11111 I t 1 1 1 1 i I O M mnm PI74FCT163374T n i n n n n i n n i n i n n i l n i n n 11n n i n 111111111 ii 111111 n 11111111111 ii Fast CMOS 3.3V 16-Bit Registers (3-State Product Features: • S upports M ixed S ig n al M ode O p eratio n

Contextual Info: WhaI HEWLETT W lKM PACKARD 3.0 GHz Low Noise Silicon MMIC Amplifier Technical Data INA-54063 Features • Ultra-Miniature Package Surface Mount Package SOT-363 SC-70 • Single 5 V Supply (29 mA) • 21.5 dB Gain (1.9 GHz) • 8.0 dBm PldB (1.9 GHz) • Positive Gain Slope

hl 4929

Abstract: 34T sot-363 ATIC 164 D2 48 pin
Contextual Info: That HEWLETT WL'kM PACKARD 1.5 GHz Low N oise Self-Biased Transistor Amplifier Technical Data INA-12063 Features • Integrated, A ctive Bias Circuit Surface Mount Package SOT-363 SC -70 D escription Pin C onnections and Package Marking The INA-12063 is a unique RFIC

Contextual Info: Thai HEWLETT mLHM P A C K A R D Cascadable Silicon Bipolar MMIC Am plifier Technical Data MSA-0800 Features • Usable Gain to 6.0 GHz • High Gain: 32.5 dB Typical at 0.1 GHz 23.5 dB Typical at 1.0 GHz • Low N oise Figure: 3.0 dB Typical at 1.0 GHz D escription

Contextual Info: W tin l H E W L E T T mllim PACKARD 0.5 - 6 GHz Low Noise GaAs MMIC Amplifier Technical Data MGA-86563 Features • Ultra-Miniature Package • Internally Biased, Single +5 V Supply 1 4 mA • 1.6 dB N oise Figure at 2.4 GHz • 21.8 dB Gain at 2.4 GHz • +3.1 dBm P idB at 2.4 GHz

Contextual Info: W haì HEWLETT WL'EM PACKARD Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-0870 Features • Usable Gain to 6.0 GHz • High Gain: 32.5 dB Typical at 0.1 GHz 23.5 dB Typical at 1.0 GHz • Low N oise Figure: purpose 50 D. gain block above 0.5 GHz and can be used as a high

MSA-0886

Abstract: MSA0886-BLK
Contextual Info: What H E W L E T T * mLliM P A C K A R D Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-0886 Features Description • Usable Gain to 5.5 GHz • High Gain: 3 2.5 dB Typical at 0.1 GHz 2 2 .5 dBTypicalat 1.0 GHz • Low Noise Figure: 3.3 dBTypicalat 1.0 GHz

Contextual Info: What mLliM HEWLETT* PACKARD 0 . 1 - 6 GHz 3 V, 14 dBm Amplifier Technical Data MGA-81563 Features • + 1 4 .8 dBm PidB at 2.0 GHz Surface Mount Package SOT-363 SC-70 + 17 dBm Psat at 2.0 GHz • Single +3V Supply • 2.8 dB Noise Figure at 2.0 GHz • 12.4 dB Gain at 2.0 GHz