EUDYNA AN Search Results

EMC21L1004GN

Abstract: EUDYNA 26841 2110 - 2170mhz power module
Contextual Info: Eudyna GaN-HEMT 10W Preliminary EMC21L1004GN High Voltage - High Power GaN-HEMT Power Amplifier Module FEATURES ・High Voltage Operation : VDS=50V ・High Gain: 28.5dB typ. at Pout=22dBm(Avg.) ・Broad Frequency Range : 2110 to 2170MHz ・Proven Reliability

EGN26A180IV

Abstract: Eudyna Devices EGN26A180
Contextual Info: Eudyna GaN-HEMT 180W Preliminary ES/EGN26A180IV High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 53.0dBm typ. @ P3dB ・High Efficiency: 55%(typ.) @ P3dB ・Linear Gain : 14.0dB(typ.) @ f=2.6GHz ・Proven Reliability

GaN amplifier

Abstract: EGN35A180IV
Contextual Info: Eudyna GaN-HEMT 180W Preliminary ES/EGN35A180IV High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 53.0dBm typ. @ P3dB ・High Efficiency: 50%(typ.) @ P3dB ・Linear Gain : 12.0dB(typ.) @ f=3.5GHz ・Proven Reliability

EGN045MK

Contextual Info: Eudyna GaN-HEMT 45W Preliminary EGN045MK High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 47.5dBm typ. @ P3dB ・High Efficiency: 60%(typ.) @ P3dB ・Linear Gain : 12dB(typ.) @ f=2200MHz ・Broad Frequency Range : 800 to 2200MHz

EGN010MK

Abstract: 6 ghz amplifier 10w
Contextual Info: Eudyna GaN-HEMT 10W Preliminary EGN010MK High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 41.0dBm typ. @ P3dB ・High Efficiency: 60%(typ.) @ P3dB ・Linear Gain : 15dB(typ.) @ f=3500MHz ・Broad Frequency Range : 800 to 3700MHz

27 31 GHz HPA

Abstract: EGN21A090IV hpa L-band Paladin-15 digital predistortion dpd 2carrier WCDMA egn21a090
Contextual Info: Eudyna GaN-HEMT 90W Preliminary EGN21A090IV High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Gain: 15dB typ. at Pout=42dBm(Avg.) ・High Efficiency: 35%(typ.) at Pout=42dBm(Avg.) ・Broad Frequency Range : 2100 to 2200MHz

EGN090MK

Abstract: 679-10 dsa0044095
Contextual Info: Eudyna GaN-HEMT 90W Preliminary HS/EGN090MK High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 51.0dBm typ. @ P3dB ・High Efficiency: 65%(typ.) @ P3dB ・Linear Gain : 18dB(typ.) @ f=900MHz ・Proven Reliability

EGN26A090IV

Abstract: EUDYNA EGN26A090
Contextual Info: Eudyna GaN-HEMT 90W Preliminary ES/EGN26A090IV High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 50.0dBm typ. @ P3dB ・High Efficiency: 55%(typ.) @ P3dB ・Linear Gain : 14.0dB(typ.) @ f=2.6GHz ・Proven Reliability

GaN amplifier

Abstract: EUDYNA
Contextual Info: Eudyna GaN-HEMT 30W Preliminary ES/EGN26A030MK High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 46.5dBm typ. @ P3dB ・High Efficiency: 60%(typ.) @ P3dB ・Linear Gain : 15.0dB(typ.) @ f=2.6GHz ・Proven Reliability

hpa L-band

Abstract: EGN21A180IV
Contextual Info: Eudyna GaN-HEMT 180W Preliminary EGN21A180IV High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Gain: 15dB typ. at Pout=45dBm(Avg.) ・High Efficiency: 32%(typ.) at Pout=45dBm(Avg.) ・Broad Frequency Range : 2100 to 2200MHz

Contextual Info: Eudyna GaN-HEMT 30W Preliminary ES/EGN35A030MK High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 46.0dBm typ. @ P3dB ・High Efficiency: 55%(typ.) @ P3dB ・Linear Gain : 13.0dB(typ.) @ f=3.5GHz ・Proven Reliability

Contextual Info: Eudyna GaN-HEMT 90W Preliminary ES/EGN35A090IV High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 50.0dBm typ. @ P3dB ・High Efficiency: 50%(typ.) @ P3dB ・Linear Gain : 12.0dB(typ.) @ f=3.5GHz ・Proven Reliability

EGN030MK

Abstract: Eudyna EGN030MK High Power GaN-HEMT EUDYNA
Contextual Info: Eudyna GaN-HEMT 30W Preliminary ES/EGN030MK High Voltage - High Power GaN-HEMT FEATURES •High Voltage Operation : VDS=50V •High Power : 46.5dBm typ. @ P3dB •High Efficiency: 60%(typ.) @ P3dB •Linear Gain : 12dB(typ.) @ f=2700MHz •Broad Frequency Range : 800 to 2800MHz

EGN030MK

Abstract: Eudyna EGN030MK High Power GaN-HEMT
Contextual Info: Eudyna GaN-HEMT 30W Preliminary EGN030MK High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 46.5dBm typ. @ P3dB ・High Efficiency: 60%(typ.) @ P3dB ・Linear Gain : 12dB(typ.) @ f=2700MHz ・Broad Frequency Range : 800 to 2800MHz

EGN010MK

Contextual Info: Eudyna GaN-HEMT 10W Preliminary ES/EGN010MK High Voltage - High Power GaN-HEMT FEATURES •High Voltage Operation : VDS=50V •High Power : 41.0dBm typ. @ P3dB •High Efficiency: 60%(typ.) @ P3dB •Linear Gain : 13dB(typ.) @ f=3500MHz •Broad Frequency Range : 800 to 3700MHz

emy14

Contextual Info: EMY1441HI Datasheet Rev1.1 J anuary,2006 EMY1441HI 11.3 Gb/s Direct Modulation Driver IC for +3.3V Supplied Voltage 1. Abstr act 1 2) 3) 4) 5) 6) 7) 8) Operation speed over 11.3Gb/s Output Modulation Current:60mA typ.,25ohm Load) Power Supply Voltage : +3.3V

Eudyna Devices

Abstract: fmm106
Contextual Info: FMM1061VJ GaAs MMIC FEATURES • Operation to 6.0 GHz • Input Frequency divide by 4, OUT and OUT • -5V or+5V DC Single Power Supply • External 50 ohm Load Driving Capability • Small 10 pin Hermetic SMT-10 Package (VJ) • Tape and Reel available

EUDYNA

Contextual Info: FLU17XM L-Band Medium & High Power GaAs FET FEATURES • High Output Power: P1dB=32.5dBm Typ. • High Gain: G1dB=13.5dB (Typ.) • High PAE: ηadd=46% (Typ.) • Hermetic Metal/Ceramic (SMT) Package • Tape and Reel Available DESCRIPTION The FLU17XM is a GaAs FET designed for base station applications in the

FLU35XM

Abstract: Eudyna Devices
Contextual Info: FLU35XM L-Band Medium & High Power GaAs FET FEATURES • High Output Power: P1dB=35.5dBm Typ. • High Gain: G1dB=12.5dB (Typ.) • High PAE: ηadd=46% (Typ.) • Hermetic Metal/Ceramic (SMT) Package • Tape and Reel Available DESCRIPTION The FLU35XM is a GaAs FET designed for base station applications in the

Eudyna Devices

Abstract: ml marking FMM1062ML eudyna an
Contextual Info: FMM1062ML GaAs MMIC FEATURES • Low Power Consumption: 60mW Typ. • Operation to 6.0 GHz • Input Frequency divide by 4, OUT and OUT • -3V (or+3V) DC Single Power Supply • External 50 ohm Load Driving Capability • Small 6-pin Plastic Package for SMT applications (ML)

"Frequency Divider"

Abstract: FMM1103VJ Eudyna Devices
Contextual Info: FMM1103VJ GaAs Microwave Frequency Divider FEATURES • Operation to 12.0 GHz • Input Frequency divide by 8, OUT and OUT • -5V or+5V DC Single Power Supply • External 50 ohm Load Driving Capability • Small 10 pin Hermetic SMT-10 Package (VJ) • Tape and Reel available

L-Band

Contextual Info: FLL810IQ-4C L-Band High Power GaAs FET FEATURES • • • • • • Push-Pull Configuration High Power Output: 80W High PAE: 45%. Excellent Linearity Suitable for class AB operation. Hermetically Sealed Package DESCRIPTION The FLL810IQ-4C is an 80 Watt GaAs FET that employs a push-pull design

Eudyna Devices

Abstract: eudyna fet FLL810IQ-3C
Contextual Info: FLL810IQ-3C L-Band High Power GaAs FET FEATURES • • • • • • Push-Pull Configuration High Power Output: 80W High PAE: 50%. Excellent Linearity Suitable for class AB operation. Hermetically Sealed Package DESCRIPTION The FLL810IQ-3C is an 80 Watt GaAs FET that employs a push-pull design.

Contextual Info: FMM5118X 20-32GHz Doubler MMIC FEATURES • Integrated Monolithic Doubler • High Harmonic Rejection • Single Supply Voltage • High Reliability DESCRIPTION The FMM5118X is a doubler, consisting of an X2 multiplier followed by a buffer amplifier for applications with an output