EUDYNA ERA Search Results

NAD 140

Abstract: ED-4701 FLM5359-45F NAD C 372
Contextual Info: FLM5359-45F C-Band Internally Matched FET FEATURES ・High Output Power: P1dB=46.5dBm Typ. ・High Gain: G1dB=8.5dB(Typ.) ・High PAE: ηadd=36%(Typ.) ・Broad Band: 5.3~5.9GHz ・Impedance Matched Zin/Zout = 50Ω ・Hermetically Sealed Package DESCRIPTION

Contextual Info: FLM5359-45F C-Band Internally Matched FET FEATURES ・High Output Power: P1dB=46.5dBm Typ. ・High Gain: G1dB=8.5dB(Typ.) ・High PAE: ηadd=36%(Typ.) ・Broad Band: 5.3~5.9GHz ・Impedance Matched Zin/Zout = 50Ω ・Hermetically Sealed Package DESCRIPTION

ED-4701

Abstract: FLM5964-45F
Contextual Info: FLM5964-45F C-Band Internally Matched FET FEATURES ・High Output Power: P1dB=47.0dBm Typ. ・High Gain: G1dB=8.5dB(Typ.) ・High PAE: ηadd=39%(Typ.) ・Broad Band: 5.9~6.4GHz ・Impedance Matched Zin/Zout = 50Ω ・Hermetically Sealed Package DESCRIPTION

gm 88

Abstract: f1640 ED-4701 FLM5964-35F
Contextual Info: FLM5964-35F C-Band Internally Matched FET FEATURES ・High Output Power: P1dB=45.5dBm Typ. ・High Gain: G1dB=9.0dB(Typ.) ・High PAE: ηadd=36%(Typ.) ・Broad Band: 5.9~6.4GHz ・Impedance Matched Zin/Zout = 50Ω ・Hermetically Sealed Package DESCRIPTION

EIAJ ED-4701

Abstract: EUDYNA C-Band Eudyna Devices ED-4701 FLM5964-35F
Contextual Info: FLM5964-35F C-Band Internally Matched FET FEATURES ・High Output Power: P1dB=45.5dBm Typ. ・High Gain: G1dB=9.0dB(Typ.) ・High PAE: ηadd=36%(Typ.) ・Broad Band: 5.9~6.4GHz ・Impedance Matched Zin/Zout = 50Ω ・Hermetically Sealed Package DESCRIPTION

ELM5964-10F

Abstract: JESD22-A114
Contextual Info: ELM5964-10F C-Band Internally Matched FET FEATURES ・High Output Power: P1dB=40.5dBm Typ. ・High Gain: G1dB=10.0dB(Typ.) ・High PAE: hadd=39%(Typ.) ・Broad Band: 5.9～6.4GHz ・Impedance Matched Zin/Zout = 50W ・Hermetically Sealed Package DESCRIPTION

JESD22-A114D

Abstract: FLM1213-6F
Contextual Info: FLM1213-6F X,Ku-Band Internally Matched FET FEATURES ・High Output Power: P1dB=37.5dBm Typ. ・High Gain: G1dB=7.0dB(Typ.) ・High PAE: hadd=27%(Typ.) ・Low IM3 =-46dBc(Typ.) @Po=26.5dBm ・Broad Band: 12.7～13.2GHz ・Impedance Matched Zin/Zout = 50W

ED-4701

Abstract: FLM5964-45F
Contextual Info: FLM5964-45F C-Band Internally Matched FET FEATURES ・High Output Power: P1dB=47.0dBm Typ. ・High Gain: G1dB=8.5dB(Typ.) ・High PAE: ηadd=39%(Typ.) ・Broad Band: 5.9~6.4GHz ・Impedance Matched Zin/Zout = 50Ω ・Hermetically Sealed Package DESCRIPTION

ELM1314-9F

Abstract: ELM1314 SCL 1058 ED-4701
Contextual Info: ELM1314-9F Ku-Band Internally Matched FET FEATURES ・High Output Power: P1dB=39.5dBm Typ. ・High Gain: G1dB=6.0dB(Typ.) ・High PAE: ηadd=30%(Typ.) ・Broad Band: 13.75～14.5GHz ・Impedance Matched Zin/Zout = 50Ω ・Hermetically Sealed Package DESCRIPTION

JESD22-A114

Contextual Info: ELM7785-35F C-Band Internally Matched FET FEATURES ・High Output Power: P1dB=45.5dBm Typ. ・High Gain: G1dB=8.0dB(Typ.) ・High PAE: hadd=35%(Typ.) ・Broad Band: 7.7～8.5GHz ・Impedance Matched Zin/Zout = 50W ・Hermetically Sealed Package DESCRIPTION

JESD22-A114

Abstract: eudyna 0054
Contextual Info: ELM6472-10F C-Band Internally Matched FET FEATURES ・High Output Power: P1dB=40.5dBm Typ. ・High Gain: G1dB=9.5dB(Typ.) ・High PAE: hadd=36%(Typ.) ・Broad Band: 6.4～7.2GHz ・Impedance Matched Zin/Zout = 50W ・Hermetically Sealed Package DESCRIPTION

ELM1314-30F

Contextual Info: ELM1314-30F/001 Ku-Band Internally Matched FET FEATURES ・High Output Power: P1dB=44.5dBm Typ. ・High Gain: G1dB=5.5dB(Typ.) ・High PAE: ηadd=22%(Typ.) ・Broad Band: 13.75～14.5GHz ・Impedance Matched Zin/Zout = 50Ω ・Hermetically Sealed Package

elm1414-30f

Abstract: 40938
Contextual Info: ELM1414-30F/001 Ku-Band Internally Matched FET FEATURES ・High Output Power: P1dB=44.5dBm Typ. ・High Gain: G1dB=6.0dB(Typ.) ・High PAE: ηadd=22%(Typ.) ・Broad Band: 14.00～14.5GHz ・Impedance Matched Zin/Zout = 50Ω ・Hermetically Sealed Package

ED-4701

Contextual Info: ELC407ZZ-5 C-Band Partially Internally Matched FET FEATURES ・High Output Power: P1dB=36.0dBm Typ. ・High Gain: G1dB=9.5dB(Typ.) ・High PAE: ηadd=40%(Typ.) ・Broad Band: 5.2~5.9GHz(BW=100MHz) ・Partially internally Matched ・Plastic Package for SMT applications

FETEX-150

Abstract: biosensor Palm Vein Technology WX300 "CMOS GATE ARRAY" fuji graphene SHINKO pharma suite riken fujitsu optical module
Contextual Info: Corporate Data History of Fujitsu ● Business 1935 ～ Developments ● Jun 20, 1935 ⿟Fuji Tsushinki Manufacturing Corporation, the company that later becomes Fujitsu Limited, is born as an offshoot of the communications division of Fuji Electric. The new company is