EUV PHOTODIODE Search Results

Contextual Info: PHOTODIODE 331 mm2 SXUV300C FEATURES • Rectangular active area • Excellent stability after EUV exposure • Windowless package for responsivity to 1nm • Ceramic package Dimensions are in inch [metric] units. ELECTRO-OPTICAL CHARACTERISTICS AT 25°C PARAMETERS

Contextual Info: Ultrafast Laser Systems 2014 Product Catalog Superior Reliability & Performance Ultrafast Laser Systems Introduction Applications: • Pump and Probe Studies • Time-domain Spectroscopy • Surface Sum Frequency Generation • EUV and X-ray Generation • Attosecond Pulse Generation

Contextual Info: PHOTODIODE 100 mm2 SXUV100 FEATURES • Single active area • Detection to 1 nm • Stable response after exposure to EUV/UV conditions • Protective cover plate Dimensions are in inch [metric] units. ELECTRO-OPTICAL CHARACTERISTICS AT 25°C PARAMETERS Active Area

Contextual Info: PHOTODIODE 331 mm2 SXUV300C FEATURES • Rectangular active area • Excellent stability after EUV exposure • Windowless package for responsivity to 1nm • Ceramic package Dimensions are in inch [metric] units. ELECTRO-OPTICAL CHARACTERISTICS AT 25°C PARAMETERS

Contextual Info: PHOTODIODE Ø2.5 mm2 SXUV5 FEATURES • Circular active area • TO-39, 3 pin package • Excellent stability after EUV exposure • Windowless package for responsivity to 1nm Dimensions are in inch [metric] units. ELECTRO-OPTICAL CHARACTERISTICS AT 25°C

Contextual Info: PHOTODIODE Ø2.5 mm2 SXUV5 FEATURES • Circular active area • TO-39, 3 pin package • Excellent stability after EUV exposure • Windowless package for responsivity to 1nm Dimensions are in inch [metric] units. ELECTRO-OPTICAL CHARACTERISTICS AT 25°C

Contextual Info: PHOTODIODE 100 mm2 SXUV100 FEATURES • Single active area • Detection to 1 nm • Stable response after exposure to EUV/UV conditions • Protective cover plate Dimensions are in inch [metric] units. ELECTRO-OPTICAL CHARACTERISTICS AT 25°C PARAMETERS Active Area

SXUV20HS1

Contextual Info: PHOTODIODE Ø5 mm SXUV20HS1 FEATURES • • • • • Circular active area Ideal for EUV detection 100% internal QE High speed Grid lines 5 microns, Pitch 100 microns • RoHS and REACH compliant RoHS Dimensions are in inch [metric] units. ELECTRO-OPTICAL CHARACTERISTICS AT 25°C

On the Compression and Blocking Distortion of Semiconductor-Based Varactors

Contextual Info: This article has been accepted for inclusion in a future issue of this journal. Content is final as presented, with the exception of pagination. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES 1 On the Compression and Blocking Distortion of Semiconductor-Based Varactors

HAS2 cypress

Abstract: STAR250 long range gold detector circuit diagram digital SUN SENSOR cmos detector space radiation BK7G18 psoc new projects 2011 RAD-HARD distance sensor STAR-1000 STAR250 star tracker AD03
Contextual Info: CYIH1SM1000AA-HHCS Detailed Specification - ICD 1. Introduction 1.7 Handling Precautions 1.1 Scope This version of the ICD is the version generated after qualification campaign closure. This specification details the ratings, physical, geometrical, electrical and electro-optical characteristics, test- and

HAS2 cypress

Abstract: APS2-FVD-06-003 SUN SPOT 300KR
Contextual Info: Image Sensor CYIH1SM1000AA-HHCS Detailed Specification - ICD 1. Introduction 1.7 Handling Precautions 1.1 Scope This version of the ICD is the version generated after qualification campaign closure. This specification details the ratings, physical, geometrical,

JRC 45600

Abstract: YD 803 SGS 45600 JRC TDA 7277 TDA 5072 krp power source sps 6360 2904 JRC Sony SHA T90 SA philips HFE 4541
Contextual Info: I SEMICON INDEXES Contents and Introduction Manufacturers' Information V O LU M E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 15th EDITION 1997 Numerical Listing of Integrated Circuits Substitution Guide U D C 621.382.3 Diagram s THE S E M IC O N INTERNATIONAL INDEXES