EZ 33V Search Results

Contextual Info: poiuiup0/£¿6ot7dwo/eujoi|/ £¿6 0^duio 85 =2 5 ; ¿O 6 6 -ddV-9 0 9GNÍirZ2 A3tí S09t7 dWV V Aqn A3d 8 JO ,n uL 133H5 L ° t7 33V0S 9 NIM¥dQ L 8 £ 8 ^ L01 0310IdlS3d ON 9N]MVdQ 6¿¿00 LV 3000 39V0 \ | 7 : is o d d^WOlbilO 1H9I3M 03dS NOUVOIOddV [500

LZL 3H

Abstract: 3L31
Contextual Info: ooozavm c A3& A3H 133HS JO O N iM v y a 31 VOS d B w o is n o 61100 L V Z10£ZZ' ±H3I3M ON 3NIMVUQ 3000 33V0 3ZIS 0 3 dS NOIlVOIIddV S0 V31 IIJ SSBdd ‘M O d '8 J S ‘~ IV D Ild 3 A ‘"IV N 3 IS ‘ N ld LULU^ >10 V d - Z 3 1 1 H 3 3 V 0 'a 3HVN SOIUODOBB

I-CUBE

Abstract: lp-032 IQX160-7PQ208 P124l P2G5 P1291
Contextual Info: i: * I- C u b IQX Family Data Sheet e m F eatures D e s c r ip t io n • SRAM-based, in-system programmable The IQX family of SRAM-based bit-oriented switching devices is • Switch Matrix manufactured using a 0.6|jm C M O S process. These devices offer clock speeds of up to 133 MHz and pin-to-pin delay as low

BZY88

Abstract: C5VI C5VI ST C6V2 ST Zener c9v c3v2 C6V2 BZY88 15 BZY88/C4V7 TZPD11
Contextual Info: lîîK ^ K -l Microsemi Corp. BZY88, T Z P I , TZPY EUROPEAN-TYPE ZENEFS FEATURES • • • • Z e n e r v o lta g e s fro m 2.7 V to 33V. H ig h s u r g e c u rre n t rating. Z e n e r v o lta g e c o n tro lle d at t h re e te st levels. H e rm e tic a lly s e a le d g l a s s co n stru ctio n .

HY5117404A

Abstract: HY5117404AJ60 HY5117404ASLT60 AMO 0210 1A038 VH77 AHC28 HY5117404 hy5117
Contextual Info: “H Y U N D A I HY5117404A Series 4M X 4-bit CMOS DRAM with Extended Data Out DESCRIPTION The HY5117404A is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY5117404A utilizes Hyundai’s CM OS silicon gate process technology as w ell as advanced circuit techniques to provide wide

Contextual Info: « flY im P A i • HYM5V72A404A K-Series 4Mx72-blt CMOS DRAM MODULE Unbuffered with EXTENDED DATA OUT DESCRIPTION The HYM5V72A404A is a 4M x 72-bit EDO mode CMOS DRAM module consisting of eighteen HY51V16404A in 24/26 pin SOJ or TSOPII and one 2048 bit EEPROM on a 168 pin glass-epoxy printed

ZJ 37

Abstract: T22J
Contextual Info: « « Y U H P IU > — -• HY57V41610 2 Banks x 128K x 16 Bit Synchronous DRAM DESCRIPTION PRELIMINARY The Hyundai HY57V41610 is a 4,194,304 bits CMOS Synchronous DRAM. HY57V41610 is organized as 2 banks of 131,072x16. HY57V41610 is offering fully synchronous operation referenced to a positive edge dock. All Inputs and outputs are

Contextual Info: TO SHIBA TH M 73V1615ATG-4,-5 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 72-BIT DYNAMIC RAM MODULE DESCRIPTION The THM73V1615ATG is a 16,777,216-word by 72-bit dynamic RAM module consisting of 18 TC5165405AFT DRAMs on a printed circuit board. This module is optimized for applications which

Contextual Info: Philips Semiconductors Product specification 3.3V 16-bit buffer/driver 3-State 74LVT16244B FEATURES DESCRIPTION • 16-bit bus interface The 74LVT16244B is a high-performance BiCMOS product designed for V<x operation at 3.3V. • 3*State buffers This device is a 16-bit buffer and line driver featuring non-inverting

Contextual Info: TELEDYNE 2û£ COPIPONENTS D ûT l Tl aQ S GÜGSûMO 1 M r - 5 S - 0 7 TELEDYNE SEMICONDUCTOR REF-02 +5V PRECISION VOLTAGE REFERENCE/TEMPERATURE TRANSDUCER Features • ■ ■ ■ ■ ■ ■ ■ ■ SV O u tp u t. ±0.3% Max. Temperature Voltage O u tp u t. 2.lmV/°C

Contextual Info: Ph ilips S em iconductors P roduct specification 3.3V Octal D-type flip-flop 3-State 74LVT574 FEATURES DESCRIPTION • Inputs and ouîputs on opposite sid e of package allow easy interface to m icroprocessors The LVT574 is a high-perform ance BiCM O S product designed for

ref01

Abstract: REF-01 REF012 REF01AJ REF01AZ REF01EJ REF01EZ REF01HJ REF01J REF01 current source
Contextual Info: ► +10V Precision Voltage Reference ANALO G D E V IC E S REF-01 FEATURES • • • • • • • • • • 10 Volt Output . ±0.3% Max Adjustment Range . ±3% Min

PC11

Abstract: QQB171 W144 W144H
Contextual Info: PRELIMINARY W CYPRESS W144 440BX AGPset Spread Spectrum Frequency Synthesizer Features Table 1. Mode Input Table * Maximized EMI suppression using Cypress’s Spread Spectrum technology * Single chip system frequency synthesizer for Intel 440BX AGPset * Two copies of CPU output

Contextual Info: 8V/5V Low Dropout Dual Regulator with ENABLE Description The CS-8164 is a low d ro p o u t, 8V, 750mA regulator. Also inclu d ed is a second 5V /100 m A o u tp u t for po w ering system s w ith standb y m em ory. Q uiescent cu rren t d ra in is less th an

I-684

Abstract: i6841
Contextual Info: Philips Semiconductors Product specification 2.5V/3.3V 20-bit bus interface latch 3-State 74ALVT16841 FEATURES DESCRIPTION • High speed parallel latches The 74ALVT16841 Bus interface latch is designed to provide extra data width for wider data/address paths of buses carrying parity. It is

00z1

Contextual Info: ^EDI EDI2CG472128V 4 Megabyte Sync/Sync Burst, Dual Key DIMM •ELECTRONIC DESISM5, INC 4x128Kx72t 3.3V Module Features Sync/Sync Burst Flow-Through 4x128Kx72 Synchronous, Synchronous Burst The EDI2CG472128VxxD2 is a Synchronous/Synchro­ Flow-Through Architecture

uc07

Contextual Info: •HYUNDAI H Y 5 1 4 4 0 0 A S e r ie s IM X 4-bit CM O S DRAM DESCRIPTION The HY514400A is the 2nd generation and fast dynamic RAM organized 1,048,576 x 4-bit. The HY514400A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating

LQ9P341

Abstract: LD7807 C104 dr480
Contextual Info: ‘REPARED BY: \PPROVED BY: DATE SPEC No” LD7807 S H A R P DATE FILE No. ISSUE: PAGE : I Aug. 23. 1995 17 pages LIQUID CRYSTAL DISPLAY GROUP APPLICABLE GROUP SHARP CORPORATION Liquid Crystal Display SPECIFICATION Group DEVICE SPECIFICATION FOR . I TFT–LCD

UM82C11

Abstract: 82C11 cga video 6845 CRTC 6845 74ls20 pin diagram UM6845R cga video UM6845 82C11C logic diagram of 74LS245
Contextual Info: UNICORN MICROE LE CTRON ICS SHE D TS7fl7flö GGQ02SS t. • i s ^ ^ 5 .,. j a ^ s a UM 487 HCGA CONTROLLER PRELIM INARY Features ■ ■ ■ ■ ■ MGA Hercules and CGA compatible ■ Built-in 6845 CRTC ■ 64 K Bytes o f video memory Flicker-Free operation during CPU read/write

Contextual Info: VG26 V (S)17400D 4,194,304x4-Bit CMOS Dynamic RAM Description The device is CMOS Dynamic RAM organized as 4,194,304 words x 4 bits. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single 5V only or 3.3V only power

BZX 48c 6v8

Abstract: PT2369 code Cj5 CMXZ11VTO 7006S
Contextual Info: M arking Codes Marking Code Part Number 04 04D 04A 04C 04S 040 1A 1A8 1AC 1B 1B8 1C8 1D8 1E 1E8 1F 1F8 1FF 1G 1G8 1H8 1J 1J8 1K 1K8 1L 1L8 1M8 1P 1PC 1QC 1RC 2AC 2B 2C 2C A 2F 2FC 2G 2 PC 2Q C 2P 3A 3AE 3B 3CE 3E 3F 3G 3J 3K 3L 3P 3SE 4A 4B 4C 4E 4F 4G 4P

Contextual Info: MP87L95 Low Vollage CMOS Very Low Power 10-Bit Analog-to-Digitc; I Converter M Micro Power Systems FEATURES BENEFITS • • • • • • • • • • • • • • • • 3.3 V Operation 10-Bit Resolution Sampling Rates from <1 kHz to 500 kHz DNL better than 1/2 LSB typ up to 250 kHz

Contextual Info: HB56HW164DB-7A/8A Preiiminary 1,048,576-W ord x 64-Bit High Density Dynam ic RAM M odule HITACHI The HB56HW164DB is a 1M x 64 dynamic RAM Small Outline Dual In-line Memory Module S.O.DIMM , mounted 4 pieces of 16-Mbit DRAM (HM51W16165ATT) sealed in TSOP package and 1 pieces of serial EEPROM

cr02am equivalent

Abstract: cr02am-8 equivalent equivalent of cr3cm CR6AM-8 CR6AM12 CR6AM-12 CR3AM-12 CR6AM CR02AM-1 CR3EM-12
Contextual Info: LO LO LO LA LA co co co co co LA LO CA LA LA LA LA LO LA LA LA IA LA LO LA LA LA LA LA LO LO O O o o o o o O— iLA co esj co eo CO CO C0 CSJ Csj CO CO CO CO CO CO CO Csj CO CO Csj CO CO —H -H — <—H o o o o o o o o i: -—•» 01 i: •< O O O O O !D O CS IN —