F 300 R 1200 KF Search Results

M116

Abstract: 300L-120
Contextual Info: F U JI 1-Pack IGBT 1200 V 300 A 1MB/ 300L-120 M U M Ë ïïr a iÊ IGBT MODULE ( L series Outline Drawings • Features • High Speed Switching • Low Saturation Voltage • Voltage Drive ■ Applications • Inverter fo r M otor Drive • AC and DC Servo Drive A m p lifie r

Contextual Info: SC11015 300/1200 Bit Per Second Modem SIERRA SEMICONDUCTOR □ A ll m o d u la to rs , d e m o d u la to rs a n d f ilte rs w ith c o m p r o m is e e q u a liz e rs o n ch ip □ C all p ro g re s s m o d e , to n e g e n ­ e ra to rs for D T M F, V.22 g u a rd

FF 150 R 1200 kf igbt

Abstract: FF 50 R 12 KF2 FZ 300 R 06 KL IGBT module FZ circuit of six pack module igbt FS-100 r 12 FZ 75 IGBT FZ 1200 IGBT FZ 600 IGBT module FZ 1200
Contextual Info: IGBT Standard Modules Type VCES V IGBT-Standardmodule IC A ICRM A VCEsat V ton µs ts µs tp = 1 ms tvj=25°C typ. tvj=25°C typ. tvj=25°C typ. tf µs RthJC tvj max °C/W °C tvj=25°C per arm typ. Dual modules n FF 15 R 12 KF 1200 15 30 3,0 0,4 0,50 0,20

IGBT FF 300

Abstract: eupec FZ 50 A 12 KF FZ 75 eupec FZ 800 R 16 fz 69 eupec FS 25 R 12 KL eupec igbt 400 A FZ200 Eupec fz 1200 r 12 50/R005 FZ
Contextual Info: IGBT modules EUPEC 3 4 0 3 2 e!? D0DG122 MTE D 071 • UPEC Fast modules Type VcES V ► ► FF FF FF FF FF 15 25 25 50 50 FF 75 FF 75 FF 100 FF 100 FF 150 FF 150 FF 200 FF 200 FF 300 FZ 200 FZ 300 FZ 300 FZ 400 FZ 400 R 12 R 06 R 12 R 06 R 12 KF KF KF KF

eupec FZ 50 A 12 KF

Abstract: IGBT FF 300 fz 69 FZ 300 R 06 KL kl 50 eupec FZ 800 R 16 Eupec fz 1200 r 12 FZ15A10KN FF 75 R 1200 kl igbt eupec FS 25 R 12 KL
Contextual Info: IGBT modules EUPEC 3 4 0 3 2 e!? D0DG122 MTE D 071 • UPEC Fast modules Type VcES V ► ► FF FF FF FF FF 15 25 25 50 50 FF 75 FF 75 FF 100 FF 100 FF 150 FF 150 FF 200 FF 200 FF 300 FZ 200 FZ 300 FZ 300 FZ 400 FZ 400 R 12 R 06 R 12 R 06 R 12 KF KF KF KF

FS150R12KF4

Abstract: IGBT module FZ 1200 FF 400 R 14 FS200R12KF4 400R12K DIODE e2l IGBT module FZ 1200 R17kf4 igbt F4 400 R 12 KF4 IGBT FZ 800R12kF4 FZ 51
Contextual Info: IGBT High-Power Module Type Range status o f sam ple availability 4 □ production • prototype. + ENG sam ples. BMOaai? 00Q25G4 fill # 1 . Q '9 8 O 2. Q '98 IGBT High Power Modules T ype Dual modules FF200R 33KF1 FF 400 R 12 KF4 FF 400 R 16 KF4 FF 400 R 1 7 K F 4

FZ 77 1000

Abstract: IGBT FZ 1200 FZ 77 FF R 1200 FZ200
Contextual Info: IGBT modules VcES IC R M lc v CEsal to n ts tf R th J C Wj ' l l i • DC V A '• i * 2 5 °C . ty p t., = 2 5 °C , ty p 'v, 2 5 °C , ly p p e r a rm V us us MS ° C /W °c tp = 1 ms •vi = 2 5 °C A ty p Dual modules FF 15 R 12 KF 1200 15 30 3 0.4 0.5

IGBT FZ 1200 kf1

Abstract: 600R12KF4
Contextual Info: IGBT High Power Modules Type V C ES lc I CRM V cE sa t ton ts tf R ,h jc tv , max V A A tp = 1 ms V MS MS °c/w °c tvj=25°C typ. |js tvj=25°C typ. tvj=25°C typ. tvj=25°C typ. o u tlin e p e r a rm D ual m o d u le s ▼ FF 400 R 12 KF4 1200 400 800 2,7

IGBT FZ 1200 kf1

Abstract: 600R16KF4 bs 1600
Contextual Info: IGBT High Power Modules Type V C ES lc I CRM V cE sa t ton ts tf R ,h jc tv , max V A A tp = 1 ms V MS MS °c/w °c tvj=25°C typ. |js tvj=25°C typ. tvj=25°C typ. tvj=25°C typ. o u tlin e p e r a rm D ual m o d u le s ▼ FF 400 R 12 KF4 1200 400 800 2,7

IGBT FF 300 R 12 KF2

Abstract: FZ 77 1000 igbt ff 75 r IGBT FZ 1200 FF 100 R 12 kf2 igbt FZ200
Contextual Info: IGBT modules Type VcES le A V IcRM v C E sat. ton ts R th J C DC per arm = tvj max tv ,= tvi = tvi 1 rrs 25 °C, typ. 25 °C, typ. 25 °C, typ. 25 °C, typ. A V US |iS |JS °C/W °c tvi O utline Dual m odules 15 R 12 KF 1200 15 30 3 0,4 0,5 0,2 1 150 63 25 R 06 KF2

Contextual Info: 7 =3 ? - 3 / F 300 R 12 KF EU P EC 52E D • 3 ll 0 3 2 tì 7 000Q 254 Sb2 HUPEC Thermische Eigenschaften Thermal properties Rthjc DC, pro Baustein/per module 0,062 °C/W Ttansistor Transistor Elektrische Eigenschaften Electrical properties Höchstzulässiae Werte

Contextual Info: FZ 300 R 12 KF 2 Transistor Thermische Eigenschaften Transistor Elektrische Eigenschaften Electrical properties Höchstzulässige Werte VcES Maximum rated values 1200 Thermal properties RthJC DC, pro Baustein / per module 0 ,0 6 3 RthCK pro Baustein / per module

Contextual Info: FF 300 R 12 KF 2 Transistor Transistor Elektrische Eigenschaften Electrical properties VCES Maximum rated values 1200 V 300 A lc Thermische Eigenschaften Rthjc RthCK IC R M tp = 1 ms 600 A Pto t tc = 25°C 1800 W Thermal properties DC, pro Baustein/per module

Contextual Info: FF 300 R 12 KF 2 Transistor Transistor Elektrische Eigenschaften Electrical properties VCES Maximum rated values 1200 V 300 A lc Thermische Eigenschaften Rthjc RthCK Thermal properties DC, pro Baustein/per module DC, pro Zweig / per arm pro Baustein/per module

transistor 131-6

Abstract: JET 4A M106 TRANSISTOR 300Z-120 M106 DIODE 03 BJT safe operating area dc motor 7 kg-cm
Contextual Info: FUJI [l'iUM ËïrDSOË 1 D 3 I l- ; - Z 1 2 1-Pack BJT 1200 V 300 A I Outline Drawings u POWER TRANSISTOR MODULE • & f t : Features • ¡SM JÏ High Voltage U ¥4 = t“ KF*9/8c Including Free Wheeling Diode • ASO ^ 7 £ i n Excellent Safe Operating Area

Contextual Info: FZ 400 R 12 KF Therm ische Eigenschaften Therm al properties 0,052 °C/W RthJC DC, pro B a u ste in /p e r module Transistor Transistor Elektrische Eigenschaften Electrical properties VCES Maximum rated values 1200 V 400 A RthCK lc 0,03 pro B a u s te in /p e r module

eupec igbt

Abstract: 68nf
Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules FZ 600 R 65 KF1 Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom

Contextual Info: FZ 300 R 12 KF Transistor Transistor Elektrische Eigenschaften Electrical properties Therm ische Eigenschaften Thermal properties 0,062 °C/W Hhüc DC, pro Baustein / per module R, RthCK 0,03 pro Baustein / per module °C/W Maximum rated values V cES le 1200

IGBT module FZ 1200

Abstract: KF6C FZ800R17KF6CB2
Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules FZ 800 R 17 KF6C B2 1700V IGBT Modul mit low loss IGBT der 2. Generation und softer EmCon Diode 1700V IGBT Module with low loss IGBT of 2nd generation and soft EmCon Diode Höchstzulässige Werte / Maximum rated values

68nf

Abstract: IGBT module FZ
Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules FZ 600 R 65 KF1 Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom

IGBT FZ 1200 kf1

Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules FZ 600 R 65 KF1 Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom

Contextual Info: FF 200 R 12 KF 2 Therm ische Eigenschaften Therm al properties 0,048 Rtwc DC, pro Baustein / per module 0,096 DC, pro Zweig / per arm 0,03 RthCK pro Baustein 1 per module pro Zweig / per arm 0,06 Transistor Transistor Elektrische Eigenschaften Electrical properties

characteristics of zener diode

Abstract: 1DI300ZP-120 zener diode b355 M114 1DI300Zp120 TRANSISTOR BO 352
Contextual Info: 1 D 3 I Z P - 1 2 3 A « ± y<r7 - h : Outline Drawings POWER TRANSISTOR MODULE •Features • hFE^^V-' High DC Current Gain • KF*3/K •smmmuimm : Applications • General Purpose Inverter >'<— 9 • Uninterruptible Power Supply • N Servo & Spindle Drive for NC Machine Tools

50yjs

Contextual Info: FF 150 R 12 KF 2 Transistor Transistor Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Maximum rated values V ces lc Therm ische Eigenschaften Therm al properties 0 ,055 DC, pro Baustein / per module R th J C 0,11 DC, pro Zweig / per arm