F F 9011 Search Results

114-18679

Contextual Info: THIS DRAWING IS UNPUBLISHED. V F R T R A I I I I f H F I I NV F R OF F F F NT I I F H T F 7 F I F HNI ING RELEASED FOR P U B L I C A T I O N F R F I F I I F R V F R Í 1 F F F F NT I I f HI I NG ALL RIGHTS RESERVED. C O P Y R I G H T 2004 Al I F R F P H T F

U6264

Abstract: PDIP28 U6264A
Contextual Info: U6264A Features F 8192 x 8 bit static CMOS RAM F 70 and 100 ns Access Times F Common data inputs and outputs F Three-state outputs F Typ. operating supply current F F F F F F F F F F 70 ns: 45 mA 100 ns: 37 mA Data retention current at 3 V: < 10 µA standard

U6264A

Abstract: PDIP28
Contextual Info: U6264A Features F 8192 x 8 bit static CMOS RAM F 70 and 100 ns Access Times F Common data inputs and outputs F Three-state outputs F Typ. operating supply current F F F F F F F F F F 70 ns: 45 mA 100 ns: 37 mA Data retention current at 3 V: < 10 µA standard

PDIP28

Contextual Info: UL6264A Low Voltage 8K x 8 SRAM F Packages: Features F 8192 x 8 bit static CMOS RAM F 250 and 500 ns Access Times F Common data inputs and data outputs F Three-state outputs F Typ. operating supply current: F F F F F F F F F 250 ns: 12 mA 500 ns: 7 mA Standby current < 5 µA

PDIP28

Contextual Info: UL6264A Low Voltage 8K x 8 SRAM F Packages: Features F 8192 x 8 bit static CMOS RAM F 250 and 500 ns Access Times F Common data inputs and data outputs F Three-state outputs F Typ. operating supply current: F F F F F F F F F 250 ns: 12 mA 500 ns: 7 mA Standby current < 5 µA

PDIP28

Abstract: U6264A ZMD AG
Contextual Info: U6264A Standard 8K x 8 SRAM Features F 8192 x 8 bit static CMOS RAM F 70 and 100 ns Access Times F Common data inputs and outputs F Three-state outputs F Typ. operating supply current F F F F F F F F F F 70 ns: 45 mA 100 ns: 37 mA Data retention current at 3 V: < 10 µA standard

a7y transistor

Abstract: RASH UD61466 A7X k
Contextual Info: Maintenance only UD61466 64K x 4 DRAM Features F Dynamic random access memory F F F F F F F F F F F 65536 x 4 bits manufactured using a CMOS technology RAS access times 70 ns/80 ns TTL-compatible Three-state outputs bidirectional 256 refresh cycles 4 ms refresh cycle time

RASH

Abstract: transistor a7y UD61466
Contextual Info: Maintenance only UD61466 64K x 4 DRAM Features F Dynamic random access memory F F F F F F F F F F F 65536 x 4 bits manufactured using a CMOS technology RAS access times 70 ns/80 ns TTL-compatible Three-state outputs bidirectional 256 refresh cycles 4 ms refresh cycle time

a7y transistor

Abstract: RASH soj20 Package UD61256 tsu a7y
Contextual Info: UD61256 Maintenance only 256K x 1 DRAM Features Description F Dynamic random access memory F F F F F F F F F F 262144 x 1 bit manufactured using a CMOS technology RAS access times 70 ns, 80 ns TTL-compatible Three-state output 256 refresh cycles 4 ms refresh cycle time

transistor a7y

Abstract: a7y transistor tsu a7y a7x transistor RASH soj20 Package ud61256 NS10000 tca 680 UD61256DC
Contextual Info: Maintenance only UD61256 256K x 1 DRAM Features Description F Dynamic random access memory F F F F F F F F F F 262144 x 1 bit manufactured using a CMOS technology RAS access times 70 ns, 80 ns TTL-compatible Three-state output 256 refresh cycles 4 ms refresh cycle time

U6264A

Abstract: U6264ASA07 U6264
Contextual Info: U6264ASA07 Automotive 8K x 8 SRAM Features Description F 8192 x 8 bit static CMOS RAM F 70 ns Access Time F Common data inputs and outputs F Three-state outputs F Typ. operating supply current: 30 mA F TTL/CMOS-compatible F Automatic reduction of power F F

U6264A

Abstract: U6264ASA07 U6264
Contextual Info: U6264ASA07 Automotive 8K x 8 SRAM Features Description F 8192 x 8 bit static CMOS RAM F 70 ns Access Time F Common data inputs and outputs F Three-state outputs F Typ. operating supply current: 30 mA F TTL/CMOS-compatible F Automatic reduction of power F F

U62H64

Abstract: U62H64SA
Contextual Info: U62H64SA Automotive Fast 8K x 8 SRAM Description Features F Fast 8192 x 8 bit static CMOS RAM F 35 ns Access Time F Bidirectional data inputs and data outputs F Three-state outputs F Data retention current at 3 V: < 50 µA F Standby current < 100 µA F TTL/CMOS-compatible

PDIP28

Abstract: SOJ28 U62H64
Contextual Info: U62H64 Features F Fast 8192 x 8 bit static CMOS RAM F 20 ns, 25 ns, 35 ns Access Times F Bidirectional data inputs and data outputs F Three-state outputs F Data retention current at 3 V: < 10 µA standard F Standby current standard < 30 µA F Standby current low power (L)

PDIP28

Abstract: SOJ28 U62H64
Contextual Info: U62H64 Features F Fast 8192 x 8 bit static CMOS RAM F 20 ns, 25 ns, 35 ns Access Times F Bidirectional data inputs and data outputs F Three-state outputs F Data retention current at 3 V: < 10 µA standard F Standby current standard < 30 µA F Standby current low power (L)

U62H64SA

Abstract: U62H64
Contextual Info: U62H64SA Automotive Fast 8K x 8 SRAM Description Features F Fast 8192 x 8 bit static CMOS RAM F 35 ns Access Time F Bidirectional data inputs and data outputs F Three-state outputs F Data retention current at 3 V: < 50 µA F Standby current < 100 µA F TTL/CMOS-compatible

Contextual Info: TH IS C DRAWING IS U N P U B L I S H E D . - - - R ELEA S ED T h b N l I II H I I- F R F I F I I F R V F R O F F F F N T I I FHI I Nf i A LL RIGHTS RESERVED . C O P Y R I G H T 2004 BY / M l " HNI J NG

PA66-0F30

Contextual Info: T H IS DRAWING VFRTRAIII IfHF IS U N P U B L IS H ED . 11NVFR0FFFFNTI I F H T F C O P Y R I G H T 2005 TE R E L E A S E D 7 F I F HNI 1NG Connectivity FRF I FUFR FOR P U B LIC A T IO N MATED V F R Í 1 F F F F N T I I EHI I NG A LL Al I F R IG H T S RFEHTF

U6264A

Abstract: U6264ASA07 ZMD AG SOP28 330 Mil
Contextual Info: U6264ASA07 Automotive 8K x 8 SRAM Features Description F F F F F The U6264ASA07 is a static RAM manufactured using a CMOS process technology with the following operating modes: - Read - Standby - Write - Data Retention The memory array is based on a 6-transistor cell.

U6264AS

Contextual Info: U6264ASA07 Automotive 8K x 8 SRAM Features Description F F F F F The U6264ASA07 is a static RAM manufactured using a CMOS process technology with the following operating modes: - Read - Standby - Write - Data Retention The memory array is based on a 6-transistor cell.

transistor c 9018

Abstract: Transistor CL 100 9011 9012 9013 9014 9018 transistor 9014 NPN transistor 9013 NPN audio output V. 9014 c 9016 transistor audio output TRANSISTOR NPN 9013 9011 NPN transistor npn 9016 transistor
Contextual Info: SELECTION GUIDE FOR AM / FM RADIO TRANSISTOR KIT Output AM R E C E IV E R r- IF 2 IF1 Conv. 901Ì 901 9012 A F Amp. 9011 SP. 9014 or :9015 7 <1 9013 Output FM R E C E IV E R F M RF 90! 6 rF M Conv. F M IF A M Conv. 9011/8 9016/8 A M / F M IF AF A m o A M / F M IF

114-18679-3

Abstract: pa66-gf30 PA6-GF15 PA46-GF15 PA66GF30 114-18679 PA66-GF15 PA6GF15 114186793 PA66GF15
Contextual Info: T H I S DRAWING IS U N P U B L I S H E D . VERTRAULI CHE UNVE ROE FFE NTLI CH TE ZEICHNUNG R E L E A S E D FOR P U B L IC A T IO N FREI FUER V E R O E F F E N T L I C H U N G ALL RIGHTS RESERVED. Al I F R F C H T F V D R R F H A I T F N . C O P Y R I G H T 2004

Contextual Info: tb _ fra m e _ A 3 _ P _ A M _ T Rev. F 2 0 0 9 /06/18 10 TYPE CRIMP DIMENSIONS WIRE BARREL PART No 90 ‘ PLATING 9-0 09 A -OHO E -0112 L.H -0 20 A PEED F -0123 D -2 09 A -2 I I0 E -2 I I F -2112 D -2 20 A -2 2 E -2I22 F 90119-2123 □ ', A B R C D G AWG

EI011

Abstract: supi SXio
Contextual Info: Audio Education Series Vol. 3 Korean Version ± l ä £ 2 C I2 M A ld is eBook National Semiconductor 1 ^ 3 m g Z l g ( l ä B | 5 L | f ¿ ^ Audio Products Group Hl § Santa Clara, California E f M B f B f ) to !>• CONTENTS Ell ¡ill £2 2>hsf (Stereo Enhancement).Pg. 6