139 CLL
Abstract: 32300 smd transistor marking code cr
Text: 139 CLL Vishay BCcomponents Aluminum Capacitors SMD Chip Long Life FEATURES • Polarized aluminum electrolytic capacitors, non-solid electrolyte, self healing. • Extended voltage and capacitance range. • SMD-version, fully moulded, insulated. 139 CLL
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08-Apr-05
139 CLL
32300
smd transistor marking code cr
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Untitled
Abstract: No abstract text available
Text: SENSITRON SEMICONDUCTOR SHD225512 TECHNICAL DATA DATA SHEET 1063, REV. B HERMETIC POWER MOSFET N-CHANNEL FEATURES: • 100 Volt, 0.035 Ohm, 55A MOSFET • Electrically Isolated, Hermetically Sealed • Electrically Equivalent to OM55N10SA MAXIMUM RATINGS ALL RATINGS ARE AT TA = 25°C UNLESS OTHERWISE SPECIFIED.
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SHD225512
OM55N10SA
SHD225512
O-254
O-254
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shd225505b
Abstract: No abstract text available
Text: SENSITRON SEMICONDUCTOR SHD225505B TECHNICAL DATA DATA SHEET 4043, REV. - HERMETIC POWER MOSFET N-CHANNEL DESCRIPTION: A 500 VOLT, 0.415 OHM, 12A MOSFET IN A HERMETIC TO-254 PACKAGE. Electrically Equivalent to IRFC450 MAXIMUM RATINGS ALL RATINGS ARE AT TA = 25C UNLESS OTHERWISE SPECIFIED.
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SHD225505B
O-254
IRFC450
250mA
O-254
shd225505b
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139 CLL
Abstract: No abstract text available
Text: 139 CLL Vishay BCcomponents Aluminum Capacitors SMD Chip Long Life FEATURES • Polarized aluminum electrolytic non-solid electrolyte, self healing capacitors, S • Extended voltage and capacitance range • SMD-version, fully moulded, insulated • Compact, rectangular shape
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2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
139 CLL
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1000 volt mosfet
Abstract: SHD225613 SHD2258
Text: SENSITRON SEMICONDUCTOR SHD225613 TECHNICAL DATA DATA SHEET 196, REV. A Formerly Part Number SHD2258 HERMETIC POWER MOSFET N-CHANNEL FEATURES: 1000 Volt, 1.05 Ohm, 12A MOSFET Isolated Hermetic Metal Package Fast Switching Low RDS on Equivalent to 12N100 Series
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SHD225613
SHD2258
12N100
1000 volt mosfet
SHD225613
SHD2258
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AUDIO MOSFET POWER AMPLIFIER SCHEMATIC
Abstract: MSK138 MSK139 schematic diagram 13,8 VDC POWER SUPPLY
Text: ISO-9001 CERTIFIED BY DSCC M.S.KENNEDY CORP. CLASS C HIGH POWER OPERATIONAL AMPLIFIER 138/139 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 MIL-PRF-38534 QUALIFIED FEATURES: Low Cost High Voltage Operation: 150V Ultra Low Quiescent Current: ±4.0 mA Typ.
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ISO-9001
MIL-PRF-38534
MSK139
MSK138
MSK138B
MSK139B
AUDIO MOSFET POWER AMPLIFIER SCHEMATIC
MSK138
MSK139
schematic diagram 13,8 VDC POWER SUPPLY
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IRF3710 equivalent
Abstract: SHD225456S SHD225456 SHDC225456 mosfet irf3710 IRF3710
Text: SENSITRON SEMICONDUCTOR SHD225456 TECHNICAL DATA DATA SHEET 4103, REV. - HERMETIC POWER MOSFET N-CHANNEL FEATURES: 100 Volt, 0.03 Ohm, 35A MOSFET Fast Switching Low RDS on Electrically Equivalent to IRF3710 Add an “S” to the end of the part number for S-100 screening, SHD225456S
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SHD225456
IRF3710
S-100
SHD225456S
SHDC225456
IRF3710 equivalent
SHD225456S
SHD225456
SHDC225456
mosfet irf3710
IRF3710
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Untitled
Abstract: No abstract text available
Text: SENSITRON SEMICONDUCTOR SHD225512 TECHNICAL DATA DATA SHEET 1063, REV. B HERMETIC POWER MOSFET N-CHANNEL FEATURES: 100 Volt, 0.035 Ohm, 55A MOSFET Electrically Isolated, Hermetically Sealed Electrically Equivalent to OM55N10SA MAXIMUM RATINGS ALL RATINGS ARE AT TA = 25 C UNLESS OTHERWISE SPECIFIED.
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SHD225512
OM55N10SA
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BTS 132 SMD
Abstract: AN1294 J-STD-020B PD57002-E PD57002S-E
Text: PD57002-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 2 W with 15dB gain @ 960 MHz / 28 V ■ New RF plastic package Description
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PD57002-E
PowerSO-10RF
PowerSO-10
BTS 132 SMD
AN1294
J-STD-020B
PD57002-E
PD57002S-E
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TO247-4L
Abstract: C20DE90HV JESD97 STC20DE90HV DC DC converter 1A 400V TO 220 Package SMPS forward
Text: STC20DE90HV Hybrid emitter switched bipolar transistor ESBT 900 V - 20 A - 0.06 W Preliminary Data General features Table 1. General features VCS ON IC RCS(ON) 1.2 V 20 A 0.06 Ω • Low equivalent on resistance ■ Very fast-switch, up to 150 kHz ■
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STC20DE90HV
2002/93/EC
O247-4L
STC20DE90HV
TO247-4L
C20DE90HV
JESD97
DC DC converter 1A 400V TO 220 Package
SMPS forward
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MN74HC
Abstract: MN74HC139 MN74HC139S
Text: High-Speed CMOS Logic MN74HC Series M N 7 4 H C 1 3 9 / M N 7 4 H MN74HC139/MN74HC1 39S C 1 3 9 S Dual 2 -to -4 Line Decoders • D e s c rip tio n M N 74H C 139/M N 74H C 139S are high-speed silicon gate CMOS, 2-to -4 line decoders decoding one o f 4 o u tp u t lines c epending on
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MN74HC
MN74HC139/MN74HC1
MN74HC139/MN74HC139S
MN74HC139/MN74HC139S
54LS/74LS.
MN74HC1
39/MN74HC139S
MN74HC139
MN74HC139S
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359RGA
Abstract: SM6J45 SM6D45 SM6D45A SM6G45 SM6G45A SM6J45A 4a2d
Text: - SM6 D, G, Jj45 TT-6 • 139 - * 2 I 3 - I OG I A c fo r n a i 6 A, 200 Y 600 V ( L , = 25 °C ) n S lt t f t t t O T O - 220 A B / ' y * r — :J le I drm Vt m S M 6 D 45 S M 6 G 45 S M 6 J 45 200 400 600 V d sm m T j — 125 ”C , 60 ( 50 H z, I 2 ■t
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00V-MOV
OTO-220AB/V
SM6D45
SM6G45
SM6J45
H-101
359RGA
SM6J45
SM6D45A
SM6G45A
SM6J45A
4a2d
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Untitled
Abstract: No abstract text available
Text: TC7W139F/FU T O SH IB A TO SH IBA CM OS D IG ITAL INTEGRATED CIRCU IT SILICON M ONOLITHIC TC7W139F, TC7W139FU 2-TO-4 LINE DECODER The TC7W 139 is a high speed C2MOS 2 to 4 LINE D ECO D ER /D EM U LTIPLEXER fabricated with silicon gate C2MOS technology. It achieves the high speed operation sim ilar to equivalent
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TC7W139F/FU
TC7W139F,
TC7W139FU
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Untitled
Abstract: No abstract text available
Text: ! I W Im SEmiOONDIJfCTOR 3.3V DS21352 and 5V DS21552 T1 Single Chip Transceivers SCT FEATURES • Complete DS1/ISDN-PRI/J1 transceiver functionality ■ Long and Short haul LIU ■ Crystal-less jitter attenuator ■ Generates DSX-1 and CSU line build outs
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DS21352
DS21552
64-byte
192MHz
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74LS11
Abstract: CMOS 74LS11
Text: TOSHIBA TC74HC11AP/AF/AFN Triple 3-Input and Gate The TC74HC11A is a high speed CMOS 3-INPUT AND GATE fabricated w ith silicon gate C2MOS technology. It achieves the high speed operation similar to equivalent LSTTL while maintaining the CMOS low power dissipation.
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TC74HC11AP/AF/AFN
TC74HC11A
TC74HC/HCT
74LS11
CMOS 74LS11
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CD4584
Abstract: CD4583 CD4581 CD4566 cd4569a 100-C 1N4565 1N4565A 1N4584A CD4565
Text: • 1N4565A THRU 1N4584A A V A ILA B LE IN JANC • A LL JU NCTIO NS CO M P LET ELY PRO TEC TED WITH SILICO N DIO XIDE CD4565 thru CD4584A • 6.4 VOLT ZE N E R VO LTAG E + 5% • ELEC T R IC A LLY EQUIVALENT TO 1N4565 THRU 1N4584A • CO M PA TIBLE WITH ALL W IRE BO N DIN G A N D DIE ATTACH T EC H N IQ U ES
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1N4565A
1N4584A
1N4565
1N4584A
CD4565
CD4584A
CD4584
CD4583
CD4581
CD4566
cd4569a
100-C
CD4565
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Untitled
Abstract: No abstract text available
Text: HIGH-SPEED DUAL 1-0F-4 DECODER IDT54AHCT139 FEATURES: DESCRIPTION: • Equivalent to ALS speeds and output drive over full temperature and voltage supply extremes The ID T54AH C T139 are dual 1-of-4 decoders built using ad vanced C E M O S , a dual metal C M O S technology. The device
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IDT54AHCT139
T54AH
MIL-STD-883,
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bms 97
Abstract: 37265
Text: S IE M E N S BGA427 Si-M M IC-Am plifier in SIEGET 25-Technology Preliminary Data # Cascadable 50 £2-Gain Block # # Unconditionally stable Gain |s21f =18.5 dB at 1.8 G H z appl.1 Gain |s21f =22 dB at 1.8 G H z (appl.2) IP3out = +7 dBm at 1.8 G H z # (V D=3V, lD=9.4m A)
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BGA427
25-Technology
Q62702-G0067
CP5056G5
bms 97
37265
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QS3253
Abstract: SN74CBT3253
Text: SN74CBT3253 DUAL 1-0F-4 FET MULTIPLEXER/DEMULTIPLEXER SC DS018G - MAY 1995 - REVISED D ECEM B E R 1997 D Functionally Equivalent to QS3253 D 5 -il Switch Connection Between Two Ports D TTL-Compatible Input Levels D Package Options Include Plastic Small-Outline D , Shrink Small-Outline
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SN74CBT3253
SCDS018G
QS3253
SN74CBT3253
10MHz,
QS3253
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2SC2407 equivalent
Abstract: 2SC2407 NC921 nec 2561 equivalent 2SC1592 NE41607 2sc1949 2SC1426 equivalent nec 2561 le NE41600
Text: N E C/ 1SE CALIFORNIA L4H7414 D 0001.310 L> T -3 H T T NPN MEDIUM POWER UHF-VHF TRANSISTOR NE416 SERIES FEATURES DESCRIPTION AND APPLICATIONS • LOW NOISE FIGURE: 1 dB at 70 MHz The NE416 series of NPN silicon transistors is one of the most versatile and widely used of NEC’s microwave transistors. The
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L4H7414
NE416
for23
2SC2407 equivalent
2SC2407
NC921
nec 2561 equivalent
2SC1592
NE41607
2sc1949
2SC1426 equivalent
nec 2561 le
NE41600
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Untitled
Abstract: No abstract text available
Text: 99.BB ,a.|B View 98,2? 4g-* ^ W 3 >n /D ^ i S .n<P>j'i3i i C W J i j f f l i x 4 s a 5 6 ft s s s s s s s s a 7 8 9 10 II 12 13 S M s a 15 16 17 s ^ 18 ^ ^ . 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 31 39
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nSDA-B5I05-0
PS-85l*
II-19+
SDA-85105-4505
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Untitled
Abstract: No abstract text available
Text: 2bE D July 26, 1990 • 02547^3 00G0172 7 ■ _ ADVANCED ELECTRONIC PKG AEPSX128K16-FCT139 STATIC RAM MODULE > > 131,072 x 16 Organization > > High speed, High density 45 pin SIP > > Completely Static operation > > TTL compatible > > Low power, battery back-up
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00G0172
AEPSX128K16-FCT139
AEPSX128K16-FCT139
capa13
A0-A14
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CN1210K35G
Abstract: SIOV-CN1206K60G CN1206K25G Q69530-V0300-K062 CN2220M4G cn1210k30g cn1210k11g Q69530-V0250-K062 CN2220K14G
Text: SMD Varistors, CN Standard Construction • Rectangular varistor element in multilayer technology, without encapsulation • Termination: silver palladium Features • • • • • Electrical equivalents to leaded types SIOV-SR Good solderability Suitable for ESD protection
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8/12/16-mm
SIOVCN1206K60G
CN1210K60G
CN1812K60G
CN2220K60G
SIOV-CN1206M4G
SIOV-CN1206M6G
SIOV-CN1206S14BAUT0G
1210K50G
CN1210K35G
SIOV-CN1206K60G
CN1206K25G
Q69530-V0300-K062
CN2220M4G
cn1210k30g
cn1210k11g
Q69530-V0250-K062
CN2220K14G
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ULN2003 ac
Abstract: ULN2001 uln 2004 ULN2003N ULN2003 PIN configuration
Text: MARCH 1982 ANALO G DIVISION ULN2001/03/04 HIGH VOLTAGE/HIGH CURRENT DARLINGTON TRANSISTOR ARRAYS DESCRIPTION EQUIVALENT SCHEMATICS PIN CONFIGURATION These high-voltage, h ig h -cu rre n t D arling ton tra n sisto r arrays are com prised o f seven silico n NPN D arling to n pairs on a com m on
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ULN2001/03/04
600mA
ULN-2001
ULN2003 ac
ULN2001
uln 2004
ULN2003N
ULN2003 PIN configuration
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