F. S. TSAI Search Results

bf 0252

Abstract: 07754 75115 31-157 X963 HP T108 T930
Contextual Info: MP A 20 SfëlÉïIUliÉ&Sl^ NEC pPA 20 i t DTL -y y - X c O ' f - b Jr~ F r i" { X " t o y / - t L'"C§£jf- - K Ä ä O Ä i S ^ 'f „ f - v W 7 / K 8 f@i ¡9 & 9 /¿PB 1, /¿PB 2 fe J; xß /¿PB 8 O A Í I t - -9.4 -8.5- * - K t, s r f f t 7 T v - f v * i g - f I f t K i f ê Æ - c t * - to S í

7915a

Abstract: yx 801 TFK ad 164 H13-31C st z7s SCR 131- 6 WJ 60 ic stk 432 090 LHi 878 34B SOT rjh ah
Contextual Info: ? — S • £ / — h NEC Í Í T / \ f Z 4 t ’7 h • '> > $ ^ P D 1 7 0 0 5 l i , T-V i> 9 \s • v -f ? □ zi > ' y ~ f • ~7 >f ^ □ □ > Y P — 5 • - > * x A f f l / \ - K ^ X T7 ^ |* lil L fc 4 t'- y h • > > 7¡\s3- y 7° C M O S h P -7 T -ÎO

APM 4317

Abstract: Installation guide for RBS g24 Data Module max 202 rs232 driver old fm radio diagram EASY256 MUNICH256 Mainboard Schematics history MUNICH256F rs232 abel sender receiver
Contextual Info: Tool Descri ption , DS 1, Septem ber 2000 E A S Y 2 56 E v a lu a tio n S y s te m f or M UN IC H2 5 6 /F / F M Ve rsi o n 2. 1 Da ta c o m N e v e r s t o p t h i n k i n g . Edition 09.00 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 München, Germany

RBS4

Abstract: EASY256 MUNICH256 ICH25
Contextual Info: G ett ing St ar ted , DS 1, Septem ber 2000 E A S Y 2 56 E v a lu a tio n S y s te m f or M UN IC H2 5 6 /F / F M Ve rsi o n 2. 1 Da ta c o m N e v e r s t o p t h i n k i n g . Edition 09.00 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 München, Germany

uPD703177

Abstract: uPD703445 nec p2x nec D19 LQFP144 U16637EE1V0DS00 nec V850e architecture manual CG2 103
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD703177 A / µPD703445(A) V850E/CG2TM CarGate-F / V850E/CG5TMCarGate-S 32-/16-BIT ROMLESS MICROCONTROLLER DESCRIPTION The V850E/CG2 (“CarGate-F“) and V850E/CG5 (“CarGate-S”) ROM-less microcontroller, are members of NEC's V850 32-bit RISC family, which match the performance gains attainable with

D71037

Abstract: UPD71037GB-10-3B4 upd71037 M 9619 PD71037
Contextual Info: ¿¿PD71037 M O S Integrated Circuit C M O S iS 'I 4 ^ 7 °P ^ 777 'JP DM A /¿ P D 71037!iW • 7? -b X • /iP D 7 1 0 3 7 i i i i E * £ . 3 i b - < T ^ i i f t , i i i •?il6 4 41 3 > Y U — =7 h •7 W J! ito V lk c o t i'O y b & m & F f 'o X H O ,

G411SD

Contextual Info: 1/2 G 4 11 S D S U R F A C E M O U N T, S C H O T T K Y B A R R I E R D I O D E V O LT A G E 4 0 V, C U R R E N T 0 . 5 A Description The G411SD is designed for low power rectification Package Dimensions REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40

GP202K

Contextual Info: CORPORATION GP202K ISSUED DATE :2006/04/10 REVISED DATE : S U R F A C E M O U N T, S W I T C H I N G D I O D E V O LT A G E 8 0 V, C U R R E N T 0 . 1 A Description The GP202K is designed for ultra high speed switching. Package Dimensions REF. A B C D E F

GN202K

Contextual Info: CORPORATION GN202K ISSUED DATE :2006/04/10 REVISED DATE : S U R F A C E M O U N T, S W I T C H I N G D I O D E V O LT A G E 8 0 V, C U R R E N T 0 . 1 A Description The GN202K is designed for ultra high speed switching. Package Dimensions REF. A B C D E F

30MHZ

Abstract: GMA42M
Contextual Info: ISSUED DATE :2004/12/03 REVISED DATE : G M A4 2 M N P N P L A S T I - E N C A P S U L AT E T R A N S I S T O R Description The GMA42M is designed for application requires for high voltage. Package Dimensions SOT-89 REF. A B C D E F Millimeter Min. Max. 4.4

Contextual Info: f Z T S G S -T H O M S O N EF6805U2 8-BIT MICROCOMPUTER ADVANCE DATA HARDW ARE FEATURES . 32 TTL/CM OS COMPATIBLEI/O LINES » 24 BIDIRECTIONAL 8 lines are LED com ­ patible • 8 INPUT-ONLY ■ 2048 BYTES OF USER ROM . 64 BYTES OF RAM ■ SELF-CHECK MODE

H5PS5162

Abstract: TPS51125 ALC269 ST220U6D3VDM-15GP ICS9LPRS365YGLFT-GP R649 wistron homa ich9 RTM875T-606-VD-GRT SC1U10V2KX-1GP
Contextual Info: A C D Mobile CPU CLK GEN. PCB STACKUP 5V_S5 5A DCBATOUT 3D3V_S5(5A) INPUTS 667/800/1066MHz@1.05V OUTPUTS DCBATOUT 1D8V_S3(10A) VCC S 800/667MHz Cantiga AGTL+ CPU I/F 12,13 WXGA/SXGA+ 15"LCD 14 LVDS ATI DDR Memory I/F PCI-EG INTEGRATED GRAHPICS RT9026 35 DDR_VREF_S0

U665B

Abstract: ICS9LPRS365YGLFT-GP ALC269 1D05V TPS51125 c4381 JMB385 Wistron Corporation VIP 12A ich9
Contextual Info: A C D Mobile CPU CLK GEN. PCB STACKUP 667/800/1066MHz@1.05V 800/667MHz Cantiga AGTL+ CPU I/F 12,13 LVDS DDR Memory I/F PCI-EG INPUTS 71.CNTIG.00U 12,13 X4 DMI 400MHz 4 36 OUTPUTS DCBATOUT 1D8V_S3 10A RT9026 35 DDR_VREF_S0 (1.5A) S 1D8V_S3 GND DDR_VREF_S3

U665B

Abstract: SCD1U10V2KX-5GP aol14 H5PS5162 0R2J-2-GP ICS9LPRS365YGLFT-GP TPS51125 WPC775L RTM875T-606 si7686
Contextual Info: A C D Mobile CPU CLK GEN. PCB STACKUP 667/800/1066MHz@1.05V 800/667MHz Cantiga AGTL+ CPU I/F 12,13 LVDS DDR Memory I/F PCI-EG INPUTS 71.CNTIG.00U 12,13 X4 DMI 400MHz 4 36 OUTPUTS DCBATOUT 1D8V_S3 10A RT9026 35 DDR_VREF_S0 (1.5A) S 1D8V_S3 GND DDR_VREF_S3

G705SD

Contextual Info: 1/2 G705SD S U R F A C E M O U N T, S C H O T T K Y B A R R I E R D I O D E V O LT A G E 4 0 V, C U R R E N T 0 . 0 3 A Description The G705SD is designed for general purpose detection and high speed switching. Package Dimensions REF. A B C D E F Millimeter

G495SD

Contextual Info: 1/2 G495SD S U R F A C E M O U N T, S C H O T T K Y B A R R I E R D I O D E V O LT A G E 4 0 V, C U R R E N T 0 . 4 A Description The G495SD is designed for low power rectification. Package Dimensions REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80

G420SD

Contextual Info: 1/2 G420SD S U R F A C E M O U N T, S C H O T T K Y B A R R I E R D I O D E V O LT A G E 4 0 V, C U R R E N T 0 . 1 A Description The G420SD is designed for low power rectification. Package Dimensions REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80

G706SD

Contextual Info: 1/2 G706SD S U R F A C E M O U N T, S C H O T T K Y B A R R I E R D I O D E V O LT A G E 4 0 V, C U R R E N T 0 . 0 3 A Description The G706SD is designed for general purpose detection and high speed switching. Package Dimensions REF. A B C D E F Millimeter

G421SD

Contextual Info: 1/2 G421SD S U R F A C E M O U N T, S C H O T T K Y B A R R I E R D I O D E V O LT A G E 4 0 V, C U R R E N T 0 . 1 A Description The G421SD is designed for low power rectification. Package Dimensions REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80

cel 9220

Abstract: 5922-C VR01969 5922A
Contextual Info: C A T 7 # « S G S -T H O M S O N M f l l B i a O l L i g T i a O l i ü l I K E g _ S T 7 2 7 1 8-BIT HCMOS MCUs WITH EEPROM AND TV/MONITOR DEDICATED FUNCTIONS PRELIMINARY DATA • ■ ■ ■ 5V ± 10% supply operating range

GMPCR06

Contextual Info: ISSUED DATE :2005/12/21 REVISED DATE :2006/03/29B GMPCR06 S E N S I T I V E G AT E S I L I C O N C O N T R O L L E D R E C T I F I E R S REVERSE BLOCKING THYRISTORS 0.8A, 400V Description The GMPCR06 PNPN device is designed for high volume, line-powered applications such as relay and lamp

GSBAW56

Contextual Info: CORPORATION G S B AW 5 6 ISSUED DATE :2005/12/23 REVISED DATE : S U R F A C E M O U N T, S W I T C H I N G D I O D E Description The GSBAW56 consists of two high-speed switching diodes with common anodes, fabricated in planar technology, and encapsulated in a small SOT-323 plastic SMD package.

CR100-6

Abstract: GMCR100
Contextual Info: ISSUED DATE :2005/09/28 REVISED DATE :2006/03/29B GM CR100-6 S E N S I T I V E G AT E S I L I C O N C O N T R O L L E D R E C T I F I E R S REVERSE BLOCKING THYRISTORS 0.8A, 400V Description The GMCR100-6 PNPN device is designed for high volume, line-powered applications such as relay and lamp

GS411SD

Contextual Info: CORPORATION G S 4 11 S D Description ISSUED DATE :2005/12/20 REVISED DATE : S U R F A C E M O U N T, S C H O T T K Y B A R R I E R D I O D E V O LT A G E 4 0 V, C U R R E N T 0 . 5 A The GS411SD is designed for low power rectification. Package Dimensions REF.