F107 Search Results
F107 Price and Stock
Panasonic Electronic Components ERJ-1GNF1071CRES SMD 1.07K OHM 1% 1/20W 0201 |
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ERJ-1GNF1071C | Digi-Reel | 67,887 | 1 |
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Cal-Chip Electronics RM02F1071CTRES0201 1% 1.07K OHM |
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RM02F1071CT | Reel | 15,000 | 15,000 |
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Panasonic Electronic Components ERJ-14NF1071URES SMD 1.07K OHM 1% 1/2W 1210 |
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ERJ-14NF1071U | Digi-Reel | 13,950 | 1 |
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ERJ-14NF1071U | 5,251 |
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ERJ-14NF1071U | 20,000 | 1 |
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TAIYO YUDEN UMF107B7223MAHTCAP CER 0.022UF 50V X7R 0603 |
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UMF107B7223MAHT | Digi-Reel | 3,693 | 1 |
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UMF107B7223MAHT | Reel | 13 Weeks | 4,000 |
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UMF107B7223MAHT | 4,000 |
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Diodes Incorporated AP22980FCF10-7LOAD SWITCH W-QFN1520-10 T&R 3K |
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AP22980FCF10-7 | Digi-Reel | 2,722 | 1 |
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AP22980FCF10-7 | 8,785 |
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AP22980FCF10-7 | 3,000 |
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AP22980FCF10-7 | 10 Weeks | 3,000 |
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F107 Datasheets (9)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | PDF Size | Page count | |
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F1-07 | Weinschel | Fixed Coaxial Attenuator | Original | 129.52KB | 1 | |||
F107 | Unknown | Discontinued Transistor Data Book 1975 | Scan | 201.33KB | 2 | |||
F1070 | Polyfet RF Devices | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR | Original | 37.88KB | 2 | |||
F1072 | Polyfet RF Devices | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR | Original | 38.24KB | 2 | |||
F1074 | Polyfet RF Devices | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR | Original | 39.78KB | 2 | |||
F1076 | Polyfet RF Devices | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR | Original | 38.42KB | 2 | |||
F1077 | Polyfet RF Devices | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR | Original | 37.82KB | 2 | |||
F-107Z |
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POWER TRANSFORMER | Original | 37.13KB | 1 | |||
F-107Z | MagneTek | Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transformer, Control, Chassis Mt., 115/230V, 48VA, 24.0VCT@2.0 A, 12.0V@4.0 A, l | Scan | 79.69KB | 1 |
F107 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: polyfet rf devices F1076 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"1"1 process features gold metal for greatly extended |
OCR Scan |
F1076 J060- 1110AvenidaAcaso, 7241DDT | |
MS20659-112
Abstract: WT115A
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F10731 MS20659-112) MS-20659-112 WT115A, WT3185 ERG4008 wsd-000168 E9809 3B-50 MS20659-112 WT115A | |
F1074
Abstract: 100watts power amp
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F1074 F1074 100watts power amp | |
F1072
Abstract: 100WATTS
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F1072 F1072 100WATTS | |
Contextual Info: polyfet rf devices F1072 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "PolyfetHtm process features gold metal for greatly extended |
OCR Scan |
F1072 | |
Contextual Info: polyfet rf devices F1070 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"1”1 process features gold metal for greatly extended |
OCR Scan |
F1070 1110AvenidaAcaso, 7241QCH | |
Contextual Info: WT-F107SP Side view Chip LED Product Specifications Specification Iv Material Quantity Z41:1610-1700 mcd Z42:1700-1800 mcd Z51:1800-1900 mcd Z52:1900-2010 mcd Z61:2010-2125 mcd Z62:2125-2250 mcd Z71:2250-2385 mcd Z72:2385-2530 mcd Z81:2530-2685 mcd Z82:2685-2850 mcd |
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WT-F107SP 81-1A 220x240mm 30sec. 08-Nov-2012 | |
Contextual Info: WT-F107SP Side view Chip LED Product Specifications Specification Iv Material Quantity Z41:1610-1700mcd Z42:1700-1800mcd Z51:1800-1900 mcd Z52:1900-2010 mcd Z61:2010-2125 mcd Z62:2125-2250 mcd Z71:2250-2385 mcd Z72:2385-2530 mcd Z81:2530-2685 mcd O @20mA/ Ta= 25 ;Tolerance: + 10% |
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WT-F107SP 1610-1700mcd 1700-1800mcd 81-1A 220x240mm 30sec. 29-Jun-2011 | |
Contextual Info: WT-F107SP-K973 Side view Chip LED Product Specifications Specification Iv Material Quantity Z41:1610-1700mcd Z42:1700-1800mcd Z51:1800-1900 mcd Z52:1900-2010 mcd Z61:2010-2125 mcd Z62:2125-2250 mcd Z71:2250-2385 mcd Z72:2385-2530 mcd Z81:2530-2685 mcd O @20mA/ Ta= 25 ;Tolerance: + 10% |
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WT-F107SP-K973 1610-1700mcd 1700-1800mcd 81-1A 220x240mm 30sec. 29-Jun-2011 | |
ms20659-111
Abstract: MS-20659-111
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F10711 MS20659-111) MS-20659-111 WT115A, WT3185 ERG4008 wsd-000168 E9809 3B-50 ms20659-111 | |
MS20659-132
Abstract: ms 20659-132
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F10721 MS20659-132) MS-20659-132 WT115A, WT3185 ERG4008 wsd-000168 E9809 3B-50 MS20659-132 ms 20659-132 | |
F1076Contextual Info: polyfet rf devices F1076 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base |
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F1076 F1076 | |
Contextual Info: WT-F107MR-K0811 Surface Mount LEDs Product Specification Specification Material Quantity 2000pcs per reel Luminous Intensity 2530-3400 mcd O @20mA / Ta= 25 C Tolerance±7% Correlated Color Rafer to page 4~5 Temperature @20mA / Ta= 25 C O Tolerance x, y± 0.005 |
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WT-F107MR-K0811 2000pcs 81-1A 220x240mm 60sec 10sec 30sec, 17-May-2013 | |
Contextual Info: WT-F107MR Surface Mount LEDs Product Specification Specification Material Quantity 2000pcs per reel Luminous Intensity 2530-3400 mcd O @20mA / Ta= 25 C Tolerance±7% Correlated Color Rafer to page 4~5 Temperature @20mA / Ta= 25 C O Tolerance x, y± 0.005 Vf |
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WT-F107MR 2000pcs 81-1A 220x240mm 60sec 10sec 30sec, 19-Apr-2013 | |
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Contextual Info: Side view Chip LED HT-F107NW Harvatek Surface Mount CHIP LED Data Sheet HT-F107NW Official Product HT Part No. HT-F107NW Customer Part No. Tentative Product * * Specifications are subject to change without notice. Data and drawings herein are copyrighted. |
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HT-F107NW May-28, 1000hrs Tamb25Â 100mA, 500hrs) 15min; | |
Contextual Info: polyfet rf devices F1077 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base |
Original |
F1077 Temper00 | |
Contextual Info: polyfet rf devices F1076 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base |
Original |
F1076 | |
Contextual Info: WT-F107SP Side view Chip LED Product Specifications Specification Iv Material Quantity Z41:1610-1700 mcd Z42:1700-1800 mcd Z51:1800-1900 mcd Z52:1900-2010 mcd Z61:2010-2125 mcd Z62:2125-2250 mcd Z71:2250-2385 mcd Z72:2385-2530 mcd Z81:2530-2685 mcd Z82:2685-2850 mcd |
Original |
WT-F107SP 81-1A 220x240mm 30sec. 08-Nov-2012 | |
Contextual Info: WT-F1071SP PLCC Side View Back Light LED Product Specification Item Specification Material Luminous Cool White: 2385~3020 mcd Intensity(Iv) @20mA/ TS= 25℃ ;Tolerance: + 10% Chromaticity As page 4 & 5 Coordinate @20mA/ TS= 25℃;Tolerance: + 0.01 Vf Cool White:2.8~3.4 V (0.1V/Bin) |
Original |
WT-F1071SP 81-1A 220x240mm 2000pcs 30sec. 11-Dec-2013 | |
Contextual Info: polyfet rf devices F1074 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"1“1 process features gold metal for greatly extended |
OCR Scan |
F1074 1502D VD81N | |
F1070Contextual Info: polyfet rf devices F1070 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base |
Original |
F1070 F1070 | |
Contextual Info: polyfet rf devices F1072 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base |
Original |
F1072 | |
Contextual Info: WT-F107SP-HIGH IV Side view Chip LED Product specifications Specification Iv mcd Material Quantity IV:2530-3020mcd O @20mA/ Ta= 25 ;Tolerance: + 10% Chromaticity As page 6 & 7 Coordinate @20mA/ Ta= 25 C;Tolerance: + 0.01 Vf (V) 3.0-3.4 (0.1V/bin) O O @20mA/ Ta= 25 C ;Tolerance: + 0.05V |
Original |
WT-F107SP-HIGH 2530-3020mcd 81-1A 220x240mm 2000pcs 30sec. 27-Feb-2013 | |
EMK10
Abstract: UMK432 tmk325 UMK325 MK325 K20L EMK325 F-106Z GF105 BJ10
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Original |
F107TYPE UMK10 GMK10 TMK10 EMK10 UMK432 tmk325 UMK325 MK325 K20L EMK325 F-106Z GF105 BJ10 |