F2600 Search Results

General Purpose Filtered Modules

Abstract: F2600 RFI Filters
Contextual Info: F2600 RFI Filters Rated Voltage: 250VAC Maximum - 50/60 Hz Rated Current: 115VAC 250VAC 3A 3A 6A 6A Current Overload: 6X for 8 seconds Hi-Pot Test 1 min : Line to Ground 1500VAC Line to Line 1768VDC Insulation Resistance: 9 x 109 Ω at 100VDC Ambient Temperature: 40°C Max at rated current

214B

Abstract: CD214B-F250 F2400
Contextual Info: PL IA NT Features *R oH S CO M • ■ ■ ■ ■ RoHS compliant* Glass passivated chip Low reverse leakage current Low forward voltage drop High current capability CD214B-F250~F2600 Surface Mount Fast Response Rectifiers General Information The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop

Contextual Info: F2600 RFI Filters Rated Voltage: 250VAC Maximum - 50/60 Hz Rated Current: 115VAC 250VAC 3A 3A 6A 6A Current Overload: 6X for 8 seconds Hi-Pot Test 1 min : Line to Ground 1500VAC Line to Line 1768VDC Insulation Resistance: 9 x 109 Ω at 100VDC Ambient Temperature: 40°C Max at rated current

CD214B-F250

Contextual Info: PL IA NT Features *R oH S CO M • ■ ■ ■ ■ RoHS compliant* Glass passivated chip Low reverse leakage current Low forward voltage drop High current capability CD214B-F250~F2600 Surface Mount Fast Response Rectifiers General Information The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop

F2150

Abstract: DO-214AA diode f2400 214B CD214B-F250
Contextual Info: PL IA NT Features S CO M • *R oH ■ ■ ■ ■ ■ Lead free as standard RoHS compliant* Glass passivated chip Low reverse leakage current Low forward voltage drop High current capability CD214B-F250~F2600 Surface Mount Fast Response Rectifiers General Information

Contextual Info: THIN SMALL OUTLINE L-LEADED PACKAGE 26 PIN PLASTIC FPT-26P-M02 Lead pitch 50mil Package width 300mil Lead shape Gullwing Lead bend direction Reverse bend Sealing method Plastic mold 26-pin plastic TSOP II (FPT-26P-M02) * : Resin protrusion. (Each side : 0.15 (.006) Max)

374C

Contextual Info: - PRELIMINARY - November 1995 Edition 2.1 FUJITSU PRODUCT PROFILE SHEET M B814405C-60/-70 CMOS 1 M X 4 BIT HYPER PAGE MODE DRAM CMOS 1,048,576 x 4 bit Hyper Page Mode Dynamic RAM The Fujitsu MB814405C is a fully decoded CMOS Dynamic RAM DRAM that contains 4,194,304

Contextual Info: MEMORY CMOS 4 M x 4 BITS HYPER PAGE MODE DYNAMIC RAM MB81V16405A-60/-70 CMOS 4,194,304 x 4 BITS Hyper Page Mode Dynamic RAM • DESCRIPTION The Fujitsu MB81V16405A is a fully decoded CMOS Dynamic RAM DRAM that contains 16,777,216 memory cells accessible in 4-bit increments. The MB81V16405A features a “hyper page” mode of operation whereby high­

Contextual Info: September 1993 Edition 1.0 FUJITSU DATA SHEET M B 8 1 164ÛOA-50/-60/-70/-80 CMOS 4M x 4 BIT FAST PAGE MODE DYNAMIC RAM CMOS 4,194,304 x 4 BIT Fast Page Mode Dynamic RAM The Fujitsu MB8116400A is a fully decoded CMOS Dynamic RAM DRAM that oontains 16,777,216 memory cells accessible in 4-bit increments. The MB8116400A features a "fast page"

814400C

Contextual Info: - PRELIMINARY - <P March 1995 Edition 2.0 FUJITSU PRODUCT PROFILE SHEET M B 8 14 4 0 0 C -60/-70 CMOS 1 M X 4 BIT FAST PAGE M O D E DRAM CMOS 1,048,576 x 4 bit Fast Page Mode Dynamic RAM The Fujitsu MB814400C is a fully decoded CMOS Dynamic RAM DRAM that contains 4,194,304

Contextual Info: PRE LIM IN AR Y- - May 1996 Edition 1.0 FUJITSU PRODUCT PROFILE SHEET MB8 1 V16405A-60/-70 CMOS 4M x 4 BIT HYPER PAGE MODE DYNAMIC RAM CMOS 4,194,304 x 4 BIT Hyper Page Mode Dynamic RAM The Fujitsu MB81V16405A is a fully decoded CMOS Dynamic RAM DRAM that contains

Contextual Info: November 1991 Edition3.0 FUJITSU DATA SHEET M B 8 1 4 4 0 0 -80•/-1o/-12 CMOS 1 M X 4 BIT FAST PAGE MODE DRAM CMOS 1,048,576 x 4 bit Fast Page Mode Dynamic RAM The Fujitsu MB814400 is a fully decoded CMOS Dynamic RAM DRAM that contains 4,194,304 memory cells accessible in 4-bit increments. The MB814400 features a fa st page" mode of

Contextual Info: -P R E L IM I N A R Y April 1996 Edition 2.1 F u jfr s u PR O D U C T PROFILE SHEET M B 8 1 V 4 1 O O C -6 0 /-7 0 CMOS 4M X 1 BIT FAST PAGE MODE DRAM CMOS 4,194,304 x 1 bit Fast Page Mode Dynamic RAM The Fujitsu MB81V4100C is a fully decoded CMOS Dynamic RAM DRAM that contains a total of

Contextual Info: - PRELIMINARY - February 1996 Edition 1.0 FUJITSU P R O D U C T PR O F IL E S H E E T MB81V4405C-60/-70 CMOS 1 M X 4 BIT HYPER PAGE MODE DRAM CMOS 1,048,576 x 4 bit Hyper Page Mode Dynamic RAM The Fujitsu MB81V4405C is a fully decoded CMOS Dynamic RAM DRAM that contains 4,194,304

Contextual Info: FUJITSU March 1992 Edition 1.0 DATA SHEET M B 8 1 4 1 O O A -6 0 /-7 0 /-8 0 CMOS 4M x 1 BIT FAST PAGE MODE DRAM CMOS 4,194,304 x 1 BIT FAST PAGE MODE DYNAMIC RAM The Fujitsu MB814100A is a fully decoded CMOS Dynamic RAM DRAM that contains a total of 4,194,804 memory cells in a x1 configuration. The MB814100A features a “fast

Contextual Info: MEMORY CMOS 4M x 4 BIT FAST PAGE MODE DYNAMIC RAM MB8117400A-50/-60/-70 CMOS 4,194,304 x 4 BIT Fast Mode Dynamic RAM • DESCRIPTION The Fujitsu MB8117400A is a fully decoded CMOS Dynamic RAM DRAM that contains 16,777,216 memory cells accessible in 4-bit increments. The MB8117400A features a “fast page” mode of operation whereby high­

MB81V17405B

Contextual Info: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS05-11317-3E MEMORY CMOS 4 M x 4 BIT HYPER PAGE MODE DYNAMIC RAM MB81V17405B-50/-60/-50L/-60L CMOS 4,194,304 × 4 Bit Hyper Page Mode Dynamic RAM • DESCRIPTION The Fujitsu MB81V17405B is a fully decoded CMOS Dynamic RAM DRAM that contains 16,777,216 memory

DS05-10174-3E

Abstract: MB81V4400C-60 MB81V4400C
Contextual Info: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS05-10174-3E MEMORY CMOS 1M x 4 BIT FAST PAGE MODE DYNAMIC RAM MB81V4400C-60/-70 CMOS 1,048,576 × 4 BIT Fast Page Mode Dynamic RAM • DESCRIPTION The Fujitsu MB81V4400C is a fully decoded CMOS Dynamic RAM DRAM that contains 4,194,304 memory

8116400

Contextual Info: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS05-10171-2E MEMORY CMOS 4M x 4 BIT FAST PAGE MODE DYNAMIC RAM MB8116400A-50/-60/-70 CMOS 4,194,304 × 4 BIT Fast Page Mode Dynamic RAM • DESCRIPTION The Fujitsu MB8116400A is a fully decoded CMOS Dynamic RAM DRAM that contains 16,777,216 memory

Contextual Info: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS05-11315-4E MEMORY CMOS 4 M x 4 BIT FAST PAGE MODE DYNAMIC RAM MB8116400B-50/-60 CMOS 4,194,304 × 4 Bit Fast Page Mode Dynamic RAM • DESCRIPTION The Fujitsu MB8116400B is a fully decoded CMOS Dynamic RAM DRAM that contains 16,777,216 memory

Contextual Info: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS05-11316-4E MEMORY CMOS 4 M x 4 BIT FAST PAGE MODE DYNAMIC RAM MB8117400B-50/-60 CMOS 4,194,304 × 4 Bit Fast Mode Dynamic RAM • DESCRIPTION The Fujitsu MB8117400B is a fully decoded CMOS Dynamic RAM DRAM that contains 16,777,216 memory

Contextual Info: THIN SMALL OUTLINE L-LEADED PACKAGE FUJITSU SEMICONDUCTOR DATA SHEET 26 PIN PLASTIC To Top / Package Lineup / Package Index FPT-26P-M01 26-pin plastic TSOP II Lead pitch 50 mil Package width 300 mil Lead shape Gullwing Lead bend direction Normal bend Sealing method

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-11315-3E MEMORY CMOS 4 M x 4 BIT FAST PAGE MODE DYNAMIC RAM MB8116400B-50/-60 CMOS 4,194,304 × 4 Bit Fast Page Mode Dynamic RAM • DESCRIPTION The Fujitsu MB8116400B is a fully decoded CMOS Dynamic RAM DRAM that contains 16,777,216 memory

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-11302-1E MEMORY CMOS 4 M x 4 BITS HYPER PAGE MODE DYNAMIC RAM MB81V16405A-60/-70 CMOS 4,194,304 × 4 BITS Hyper Page Mode Dynamic RAM • DESCRIPTION The Fujitsu MB81V16405A is a fully decoded CMOS Dynamic RAM DRAM that contains 16,777,216 memory