F3N08L Search Results

F3N08L Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
AN9321 Abstract: AN9322 Contextual Info: in te r r ii RFD3N08L, RFD3N08LSM D ata S h e e t 3A, 80V, 0.800 Ohm, Logic Level, N-Channel Power MOSFETs 2 8 3 6 .4 • 3A, 80V • rDS ON = 0.800Q • Temperature Compensating PSPICE Model • On Resistance vs Gate Drive Voltage Curves • Peak Current vs Pulse Width Curve	OCR Scan	RFD3N08L, RFD3N08LSM RFD3N08L RFD3N08LSM TA09922. AN7254 AN7260. AN9321 AN9322	PDF
AN9321 Abstract: AN9322 RFD3N08L RFD3N08LSM RFD3N08LSM9A TB334 Contextual Info: RFD3N08L, RFD3N08LSM Data Sheet 3A, 80V, 0.800 Ohm, Logic Level, N-Channel Power MOSFETs Features • 3A, 80V The RFD3N08L and RFD3N08LSM are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for use with logic level 5V driving	Original	RFD3N08L, RFD3N08LSM RFD3N08L RFD3N08LSM AN9321 AN9322 RFD3N08LSM9A TB334	PDF
AN7254 Abstract: AN7260 AN9321 AN9322 RFD3N08L RFD3N08LSM RFD3N08LSM9A F3N08L Contextual Info: RFD3N08L, RFD3N08LSM S E M I C O N D U C T O R 3A, 80V, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs December 1995 Features Packages • 3A, 80V TO-251AA SOURCE DRAIN GATE • rDS ON = 0.800Ω • Temperature Compensating PSPICE Model	Original	RFD3N08L, RFD3N08LSM O-251AA 175oC O-252AA RFD3N08L RFD3N08LSM 55e-2 58e-5) 19e-3 AN7254 AN7260 AN9321 AN9322 RFD3N08LSM9A F3N08L	PDF
Contextual Info: Hormis S RFD3N08L, RFD3N08LSM Semiconductor y 3A, 80V, 0.800 Ohm, Logic Level, N-Channel Power MOSFETs juiy 1998 Features Description • 3A, 80V • UIS Rating Curve The RFD3N08L and RFD3N08LSM are N-Channel enhancement mode silicon gate power field effect transistors	OCR Scan	RFD3N08L, RFD3N08LSM RFD3N08L RFD3N08LSM 19e-4 55e-2 58e-5) 19e-3 12e-6)	PDF
RF03N0 Contextual Info: RFD3N08L, RFD3N08LSM fü HARIRIS S E M I C O N D U C T O R 3A, 80V, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs December 1995 Packages Features • 3A, 80V • r DS ON T O -2 51A A SOURCE = 0.800ÎJ • Temperature Compensating PSPICE Model	OCR Scan	RFD3N08L, RFD3N08LSM RFD3N08L RFD3N08LSM 03e-3 13e-10 1e-30 19e-4 58e-5) RF03N0	PDF
AN9322 Abstract: AN9321 RFD3N08L RFD3N08LSM RFD3N08LSM9A TB334 Contextual Info: RFD3N08L, RFD3N08LSM Data Sheet Title FD3 8L, D3 8LS bt A, V, 00 m, gic vel, Cha el wer OSTs utho July 1999 3A, 80V, 0.800 Ohm, Logic Level, N-Channel Power MOSFETs Features The RFD3N08L and RFD3N08LSM are N-Channel enhancement mode silicon gate power field effect transistors	Original	RFD3N08L, RFD3N08LSM 175oC TB334 TA09922. RFD3N08L O-251AA O-252AA F3N08L AN9322 AN9321 RFD3N08L RFD3N08LSM RFD3N08LSM9A TB334	PDF
AN9321 Abstract: AN9322 RFD3N08L RFD3N08LSM RFD3N08LSM9A TB334 Intersil application notes Contextual Info: RFD3N08L, RFD3N08LSM Data Sheet 3A, 80V, 0.800 Ohm, Logic Level, N-Channel Power MOSFETs 2836.4 • 3A, 80V • rDS ON = 0.800Ω • Temperature Compensating PSPICE Model • On Resistance vs Gate Drive Voltage Curves • Peak Current vs Pulse Width Curve	Original	RFD3N08L, RFD3N08LSM 175oC TB334 TA09922. RFD3N08L RFD3N08LSM AN9321 AN9322 RFD3N08LSM9A TB334 Intersil application notes	PDF