F70 MARKING Search Results

Contextual Info: MODEL CMF Metal Film Resistors Military, MIL-R-10509 Qualified, Type RN Military, MIL-R-22684 Qualified, Type RL FEATURES • Very low noise • Very low voltage coefficient • Controlled temperature coefficient • Excellent high frequency characteristics

Contextual Info: S A W 7 -f l/ £ SAW Filter) KSS L S F B 4 4 -4 2 6 -8 0 0 K 0 / LS FB 4 4 -4 2 9 -8 0 0 K 0 LS FA 02-4 34-002 M 0 / LS FA 0 2 -4 2 2 -8 0 0 K 0 LS FA 0 2 -4 4 0 -4 0 0 K 0 / LSFB20-469-001 MO /Jv'E ^)ffl400M H z^:/4 0 0 M H z Band SAW Filter of Low power consumption

mil grade resistors

Abstract: mq49
Contextual Info: Q00 PRECISION METAL FILM RESISTORS MF SERIES MIL-Grade Performance Levels! FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ Wide resistance range: 1 .OQ to 22.1 Meg TC ±2 5 to ± 100 PPM standard. Matching to 10 PPM Tolerances + . 1°/o to +1 %. Matching to .02%

Contextual Info: PRECISION METAL FILM RESISTORS RESISTORS ♦ CAPACITORS * COtLS * DELAY LINES MF SERIES □ □ □ □ □ □ □ □ Wide resistance range: 1.00 to 22.1 Meg TC ±25 to ±100ppm standard, matching to 10ppm Precision quality, excellent stability, reasonable cost

marking code micron label

Contextual Info: ADVANCE‡ 64Mb MULTIBANK ASYNC/PAGE FLASH 16Mb ASYNC CellularRAM MEMORY FLASH AND CellularRAM COMBO MEMORY MT28C64416W18AFY Low Voltage, Wireless Temperature Features Figure 1: 68-Ball FBGA Stacked die Combo package • Includes one 64Mb Flash device • Includes one 16Mb CellularRAM device

Contextual Info: ADVANCE‡ 64Mb MULTIBANK ASYNC/PAGE FLASH 16Mb ASYNC CellularRAM MEMORY FLASH AND CellularRAM COMBO MEMORY MT28C64416W18AFY Low Voltage, Wireless Temperature Features Figure 1: 68-Ball FBGA Stacked die Combo package • Includes one 64Mb Flash device • Includes one 16Mb CellularRAM device

CSWA2-63DR

Abstract: Mini-circuits marking code mcl 80-63d is373 PL-279 is 373 TB-461 dg1293 CSWA263DR CMOS 4000 voltage
Contextual Info: Ceramic, Hermetic SPDT RF Switch 50Ω 500-6000 MHz Absorptive RF Switch with internal driver. Single Supply Voltage, +3V to +5V Product Features • Wide bandwidth, 500 to 6000 MHz • High Isolation, 65 dB typ. at 1 GHz • Low insertion loss, 1.0 dB typ.

mcl 80-63d

Abstract: CSWA2-63DR
Contextual Info: Ceramic, Hermetic SPDT RF Switch 50Ω 500-6000 MHz Absorptive RF Switch with internal driver. Single Supply Voltage, +3V to +5V Product Features • Wide bandwidth, 500 to 6000 MHz • High Isolation, 65 dB typ. at 1 GHz • Low insertion loss, 1.0 dB typ.

Micron flash

Abstract: marking code micron label marking W18
Contextual Info: PRELIMINARY‡ 64Mb MULTIBANK BURST FLASH 16Mb/32Mb/64Mb ASYNC/PAGE CellularRAM FLASH AND CellularRAM COMBO MEMORY MT28C64416W18/W30A PREVIEW‡‡ MT28C64432W18/W30A MT28C64464W18/W30A Low Voltage, Wireless Temperature Features Figure 1: 77-Ball FBGA

mcl 80-63d

Abstract: Mini-circuits marking code CSWA2-63DR is373 F70 marking
Contextual Info: Ceramic, Hermetic SPDT RF Switch 50Ω 500-6000 MHz Absorptive RF Switch with internal driver. Single Supply Voltage, +3V to +5V Product Features • Wide bandwidth, 500 to 6000 MHz • High Isolation, 65 dB typ. at 1 GHz • Low insertion loss, 1.0 dB typ.

w18 SMD

Abstract: W18 SMD MARKING CODE INTEL flash part MARKING marking code micron label cub smd Flash Controller Micron micron part marking decoder
Contextual Info: 64Mb MULTIBANK ASYNC/PAGE OR BURST FLASH 16Mb/32Mb/64Mb ASYNC/PAGE CellularRAM FLASH AND CellularRAM COMBO MEMORY MT28C64416W18/W30A ADVANCE‡‡ MT28C64432W18/W30A MT28C64464W18/W30A Low Voltage, Wireless Temperature Features Figure 1: 77-Ball FBGA

MICRON fBGA package code

Abstract: INTEL flash part MARKING marking code micron label MT28C64432
Contextual Info: PRELIMINARY‡ 64Mb MULTIBANK ASYNC/PAGE OR BURST FLASH 16Mb/32Mb/64Mb ASYNC/PAGE CellularRAM FLASH AND CellularRAM COMBO MEMORY MT28C64416W18/W30A PREVIEW‡‡ MT28C64432W18/W30A MT28C64464W18/W30A Low Voltage, Wireless Temperature Features Figure 1: 77-Ball FBGA

Contextual Info: Ceramic, Hermetic SPDT RF Switch 50Ω 500-6000 MHz Absorptive RF Switch with internal driver. Single Supply Voltage, +3V to +5V Product Features • Wide bandwidth, 500 to 6000 MHz • High Isolation, 65 dB typ. at 1 GHz • Low insertion loss, 1.0 dB typ.

INFINEON "part marking"

Abstract: marking code micron label
Contextual Info: PRELIMINARY‡ 128Mb MULTIBANK BURST FLASH 32Mb/64Mb BURST CellularRAM COMBO FLASH AND CellularRAM COMBO MEMORY MT28C128532W18/W30E MT28C128564W18/W30E Low Voltage, Wireless Temperature Features Figure 1: 77-Ball FBGA Stacked die Combo package • Includes two 64Mb Flash devices

Contextual Info: Ceramic, Hermetic SPDT RF Switch 50Ω 500-6000 MHz Absorptive RF Switch with internal driver. Single Supply Voltage, +3V to +5V Product Features • Wide bandwidth, 500 to 6000 MHz • High Isolation, 65 dB typ. at 1 GHz • Low insertion loss, 1.0 dB typ.

w18 SMD

Abstract: w18 smd transistor smd transistor w18 marking W18 w18 transistor smd
Contextual Info: 128Mb MULTIBANK BURST FLASH 32Mb/64Mb BURST CellularRAM COMBO FLASH AND CellularRAM COMBO MEMORY MT28C128532W18/W30E MT28C128564W18/W30E Low Voltage, Wireless Temperature Features Figure 1: 77-Ball FBGA Stacked die Combo package • Includes two 64Mb Flash devices

MARKING 5C0

Contextual Info: T L C O M P A T IB L E * ECOVERY GENERATOR # T2L in p u t and o u tp u t # Pulse w id th s stable and precise # High o u tp u t d uty cycles # 8-pin Space Saver package fo r at least 10ns to o b ta in the d e sire d o u tp u t pulse. The d uration of the p o sitive in p u t pulse, a fte r th is tim e, has no

is373

Abstract: 63-DR CSWA2-63DR
Contextual Info: Ceramic, Hermetic SPDT RF Switch 50Ω 500-6000 MHz Absorptive RF Switch with internal driver. Single Supply Voltage, +3V to +5V Product Features • Wide bandwidth, 500 to 6000 MHz • High Isolation, 65 dB typ. at 1 GHz • Low insertion loss, 1.0 dB typ.

mcl 80-63d

Abstract: "RF Switch" CSWA2-63DR DG1293 JESD22-A114 JESD22-A115 N5230A PL-279 is 373
Contextual Info: Ceramic, Hermetic SPDT RF Switch 50Ω 500-6000 MHz Absorptive RF Switch with internal driver. Single Supply Voltage, +3V to +5V Product Features • Wide bandwidth, 500 to 6000 MHz • High Isolation, 65 dB typ. at 1 GHz • Low insertion loss, 1.0 dB typ.

cswa2-63dr

Abstract: dg1293 mcl 80-63d JESD22-A114 JESD22-A115 N5230A 80-63D is373
Contextual Info: Ceramic, Hermetic SPDT RF Switch 50Ω 500-6000 MHz Absorptive RF Switch with internal driver. Single Supply Voltage, +3V to +5V Product Features • Wide bandwidth, 500 to 6000 MHz • High Isolation, 65 dB typ. at 1 GHz • Low insertion loss, 1.0 dB typ.

Mini-circuits marking code

Abstract: AH1415 OF MINICIRCUITS AVA-24 Mini-circuits marking code MBA-12 Mini-circuits date code MC1631
Contextual Info: Tape & Reel Packaging For Surface Mount Devices A utomation of surface-mount assembly by the use of pick-and-place equipment to handle tiny components has been enhanced by evolutionary improvements in tape-and-reel systems which can accommodate as many as 4000 parts on a 13-inch

Contextual Info: CMF Non-Magnetic www.vishay.com Vishay Dale Metal Film Resistors, Non-Magnetic, Industrial, Precision FEATURES • • • • • • • Small size - conformal coated Flame retardant epoxy coating Controlled temperature coefficient Available Excellent high frequency characteristics

LH645C2Z

Abstract: sharp LH6
Contextual Info: i * SHARP toa 1« SHARP LH645C2Z •Handle this document carefully for it contains material protected by international copyright la». Any reproduction. Full or in part, of this material is prohibited without the express written permission of the company.

STR 6656

Abstract: transistor str 6656 13001 TRANSISTOR Transistor mcr 22-8 413 mark 74w npn SI 13003 str 12006 atmel 0744 13001 TRANSISTOR equivalent str 10006
Contextual Info: Version 2.0 Produced in June 1997 R SSharp Programmable Controller New Satellite JW10 User's Manual We thank you for your purchase of the SHARP programmable controller JW10. Carefully read this user's manual and the JW10 instruction manual attached to the system