F8007 Search Results

P03P

Contextual Info: PART NUMBER UNCONTROLLED DOCUMENT LD S-F8007R I-U SB CAUTION: STATIC SENSITIVE DEVICE FOLLOW PROPER E.S.D, HANDLING PROCEDURES WHEN WORKING WITH THIS PART. PIN 1 REV. 8,50 E0.335] 4,50 E0.177] PIN 18 ELECTRO-OPTICAL CHARACTERISTICS Ta = 25'C PARAMETER PEAK WAVELENGTH

DIN-46228 T3

Contextual Info: Insulated Ferrules Insulated Twin Ferrules Cat. No. F8000 F8001 F8002 F8003 F8005 F8006 F8007 F8008 F8009 F8010 F8011 Conductor Section AWG MM2 2x 20 2x 18 2x 18 2x 17 2x 17 2x 16 2x 16 2x 14 2x 14 2x 12 2x 10 2x 0.50 2x 0.75 2x 0.75 2x 1.00 2x 1.00 2x 1.50

brass properties

Abstract: F8007 MCM 2128 BU 2735 AS F2034 resistivity wire nichrome UL486E table 14.1 F4020 UL486E ACS 0865
Contextual Info: NEMA Terminal Blocks Technical Summary TERMINAL BLOCK OR PRODUCT LINE CONTACT TYPE MATERIAL PLATE SCREW STYLE High Density Tubular Clamp Electroplated Tubular Copper Contact 6-32 Slotted Head Screw 033” Wide x .040” Deep Steel Steel Electroplated .020”

DL161

Abstract: DL162 DL163
Contextual Info: Am29DL16xD 16 Megabit 2 M x 8-Bit/1 M x 16-Bit CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Minimum 1 million write cycles guaranteed per sector ■ Simultaneous Read/Write operations — Data can be continuously read from one bank while

M410000002

Abstract: DL161 DL162 DL163 m410000009 AM29DL164DT
Contextual Info: Am41DL16x4D Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and

DL161

Abstract: DL162 DL163 AM29DL164DT M4200
Contextual Info: Am42DL16x2D Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and

DS42546

Contextual Info: DS42546 Stacked Multi-Chip Package MCP Flash Memory and SRAM Am29DL163D Top Boot 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (512 K x 8-Bit/ 256 K x 16-Bit) Static RAM DISTINCTIVE CHARACTERISTICS

164D48

Abstract: DL162 DL163 D163D
Contextual Info: Am29DL162D/163D/164D 16 Megabit 2 M x 8-Bit/1 M x 16-Bit CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Minimum 1 million write cycles guaranteed per sector ■ Simultaneous Read/Write operations

S29JL032

Abstract: DL161 DL162 DL163 S29JL032H S29PL032J S29PL-J D162DT90 D163DB70 D164DB70
Contextual Info: Am29DL16xD Data Sheet Retired Product Am29DL16xD Cover Sheet This product family has been retired and is not recommended for designs. For new and current designs involving TSOP packages, S29JL032H supersedes Am29DL16xD and is the factoryrecommended migration path. Please refer to the S29JL032H data sheet for specifications and ordering information.

IEC61754-20

Abstract: PBT 20 GF EN 1303 dust cap LC EN50173 61224 IEC-61754-20 052298
Contextual Info: www.geraetebau.telegaertner.com ca. 30 Fax: +49 35055/61224 13,2 15,6 Alle Rechte vorbehalten / all rights reserved Telegärtner Gerätebau GmbH D-01774 Höckendorf Frauenstrasse 1 Germany Phone: +49 35055/682-0 6,25 Verpackung Packing 1 Stück im PE-Beutel mit Montagehinweis

Contextual Info: Am29DS163D Data Sheet Retired Product Am29DS163D Cover Sheet This product has been retired and is not recommended for designs. For new and current designs please contact your Spansion representative for alternates. Availability of this document is retained for reference and historical purposes only.

Contextual Info: Am29DL16xD 16 Megabit 2 M x 8-Bit/1 M x 16-Bit CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES — 10 mA active read current at 5 MHz — 200 nA in standby or automatic sleep mode • Simultaneous Read/Write operations

giga Ethernet PHY RGMII

Abstract: 88E1111 GMII config giga pc MOTHERBOARD pcb diagram schematic S29GL256N11TFIV2 marvel phy 88e1111 reference design MPC8568 88E1111 PHY registers map 88E1111 S29GL256N11TFI020 usb to rj45 extenders
Contextual Info: MPC8568E MDS Processor Board User’s Guide Rev. 0.3 06/2007 MPC8568E MDS Processor Board, Rev. 0.3 Freescale Semiconductor Chapter 1 General Information 1.1 Introduction. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

88E1111-B2-BAB1C000

Abstract: 88E1111B2BAB1C000 88E1111-B2 -BAB-1I000 88E1111-B2 88E1111-B2-BAB 88E1111 Marvell PHY 88E1111 bsdl 88E1111 PHY registers map marvel phy 88e1111 reference design Marvell PHY 88E1111 Datasheet
Contextual Info: MPC8569E-MDS-PB HW User Guide June 2009 Rev. 1.0 MPC8569E-MDS-PB Moduled Development System Processor Board HW User Guide Version 1.0 Freescale Semiconductor Table of Contents General Information Table of Contents List of Figures v List of Tables vii Chapter 1

DL161

Abstract: DL162 DL163
Contextual Info: Am42DL16x2D Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and

DL161

Abstract: DL162 DL163 D163DB70
Contextual Info: Am29DL16xD Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and

QE R523

Abstract: diode QE r637 diode QE R615 QE r637 QE R611 qe r542 QE R549 Qe R532 QE R552 QE R644
Contextual Info: Freescale Semiconductor Hardware Getting Started Guide Document Number: MPC8569E-MDS-PB_HGS Rev. 3.1 MPC8569E-MDS-PB This document describes the MPC8569E-MDS-PB and its related hardware kit. The MPC8569E-MDS-PB getting started procedure explains and verifies the board’s basic

LC-Connector

Contextual Info: www.geraetebau.telegaertner.com 13,15 Fax: +49 35055/61224 10,3 ca. 59 Alle Rechte vorbehalten / all rights reserved Telegärtner Gerätebau GmbH D-01774 Höckendorf Frauenstrasse 1 Germany Phone: +49 35055/682-0 6,25 Verpackung Packing 1 Satz im PE-Beutel mit Montagehinweis

DL161

Abstract: DL162 DL163
Contextual Info: Am29DL16xD Data Sheet -XO\  7KH IROORZLQJ GRFXPHQW VSHFLILHV 6SDQVLRQ PHPRU\ SURGXFWV WKDW DUH QRZ RIIHUHG E\ ERWK $GYDQFHG 0LFUR 'HYLFHV DQG XMLWVX $OWKRXJK WKH GRFXPHQW LV PDUNHG ZLWK WKH QDPH RI WKH FRPSDQ\ WKDW RULJ LQDOO\ GHYHORSHG WKH VSHFLILFDWLRQ WKHVH SURGXFWV ZLOO EH RIIHUHG WR FXVWRPHUV RI ERWK $0' DQG

Am29DL162CB

Contextual Info: PRELIMINARY Am29DL162C/Am29DL163C 16 Megabit 2 M x 8-Bit/1 M x 16-Bit CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Minimum 1 million write cycles guaranteed per sector ■ Simultaneous Read/Write operations

D164DB70

Abstract: d162dt90
Contextual Info: Am29DL16xD 16 Megabit 2 M x 8-Bit/1 M x 16-Bit CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES — 10 mA active read current at 5 MHz — 200 nA in standby or automatic sleep mode • Simultaneous Read/Write operations

Contextual Info: PRELIMINARY Am42DL16x2D Stacked Multi-Chip Package MCP Flash Memory and SRAM Am29DL16xD 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 2 Mbit (128 K x 16-Bit) Static RAM DISTINCTIVE CHARACTERISTICS MCP Features

gsc840

Contextual Info: Index CATALOG NUMBER PAGE NUMBER 101A. . . . . . . . . . . . . . . . . . . . 74 101AG . . . . . . . . . . . . . . . . . . 74 101B. . . . . . . . . . . . . . . . . . . . 74 101BG . . . . . . . . . . . . . . . . . . 74 10RC-10. . . . . . . . . . . . . . . . . 11

M410000002

Abstract: DL161 DL162 DL163 AM41DL1644DT
Contextual Info: PRELIMINARY Am41DL16x4D Stacked Multi-Chip Package MCP Flash Memory and SRAM Am29DL16xD 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM DISTINCTIVE CHARACTERISTICS