FAG 45 Search Results

2D222

Abstract: ZBV B2 BMK B1 5az 11 M5CV 1K22 K022
Contextual Info: *+,-&!,./0.123"&$*!*"42!#3*+*$5 /.0/!*1,&'23 4+5! ,+-+12 6+4270&!,&01472+,$ !!!!"#$#%&''&()!*+,-# ;<=> !!!!$&,.&$ "#$#%&'(%)*+,%%-./'01*23%4565%!7$88 97!:;%#$!<=:#! !"#$%&"'( >2'?@0.?+22(%AB*2+@',%C*1%C+D%*0%E%C+D%FAG >H@0'I'2(%-*J%&0*1*K@%L*2@+M'N%7:$IL%O%7%PI1B

Contextual Info: 2014-06-04 Silicon NPN Phototransistor in SMT TOPLED -Package NPN-Silizium-Fototransistor im SMT TOPLED ®-Gehäuse Version 1.2 SFH 320, SFH 320 FA SFH 320 SFH 320 FA / FAG Features: Besondere Merkmale: • Spectral range of sensitivity: 450 nm . 1150 nm SFH 320 , 750 nm . 1120 nm (SFH 320 FA)

bzx8sc

Abstract: BZX85C
Contextual Info: FAG O R^ BZX85C10 BZX85C200 1.3 W Zener Diodes Dimensions in nun. DO-41 Plastic Voltage 10 to 200 V 3 CO N §1 '1 Power 1.3 W 5±0.2 , S 8 .5 “ .s Mounting instructions 1. Min. distance from body to soldering point, 4 mm. 2. Max. solder temperature, 350 °C.

diode 1BL

Abstract: WESTINGHOUSE dc motor transistor fag 35 powerex kd powerex kd22 kd2245 kd221K WESTINGHOUSE transistor 1BL diode
Contextual Info: y i 7 294621 POWERËX INC fag D e | TaiMtai OODOTEb 1 | Dual Darlington TRANSISTOR Modules 75 Amperes 4 5 0 /1 OOO Volts Dim A B C D E F G H K M Inches 3.700 Max . 3.150+ .020 .79 1.34 Max 1.06 .315 1.220 Max .256 .571 € Millimeters 94 Max 80 ± 0 .5 20

ltt c500 5a

Abstract: RGP 15 d HVR062 L105 RGP50A RGP50M
Contextual Info: 57E D • FAGOR BMS T Bi S DOODb^fl ITT IF6RS FAG OR E L E C T R O N I C S Dimensions in nun. P-6 Plastic RGP50A 'T '- o * -1 1 Current 5.0 A. at 55 °C. Voltage 50 to 1000 V. Mounting instructions • Glass passivated junction 1. Min. distance from body to soldering point,

BY250

Abstract: BY251-BY255 BY251 BY255 fagor 2fbp 08
Contextual Info: S7E » • 3 4 5 T 3E S 0 G Ü Ü 72 1 302 MF G R S BY251.BY255 F A G O R FAG OR E L E C T R O N I C S Dimensions in mm. s D 0-201AD DO-27A Plastic Voltage 200 to 1.300 V. Current 3.0 A. at 50°C. 1 9.3103 S9.5 nun • Low cost Mounting instructions

n2nf

Contextual Info: QB10 4 M 3G /0,% 1.* %2,-+3$-)#"!.#4& $5 INC . !"#$%&'(&)* 56+78*!(9*:;<=>?@*A*2BC@;D>EAF*9@D>G<E?HGC<; 9I>CGJ*CJAC*KHEGC><E9*A9L ̋ A*9<F>?B9CAC@*E<;DAFFMBGF<9@?*9I>CGJ ̋ A*E<EB>E=@;C>EN*?>N>CAF*C;AE9>9C<; ̋ A*9<F>?B9CAC@*;@:FAG@D@EC*K<;*A*E<;DAFFMBGF<9@?O

AWG28 ul2651

Abstract: LPC-B30FAG
Contextual Info: 1 \ _ D 2 * ° .^ •<- 2±o.ix n / 2 - 1 = A ±0'2 - ;»■ D TAB LE 2. PLATING P AR T No. L P C - B (n )F A G LPC —B (n)FAG 1 LPC —B (n )F A G 2 LPC —B (n )F A G 3 FIN ISH CONTACT AREA:Au PLATING(0.2|um) IDC AREA:TIN PLATING Au PLATING(CONTACT AREA:0.2mm OTHER 0.05mm)

RXDSB 4 ASEA

Abstract: asea ri 5A relay sa 7454 RXDSE rxdsb RXDSB4 asea RADSB Transformer differential protection RADSB RK 625 RXMS1 radsb
Contextual Info: Catalogue RK 62-12 E Edition 2 1981-09 File R, part 1 T ransformer differential relay type RADSB The RADSB is a three-phase percentage differential relay with two, three or five through-fag[[ restraint inputs. The relay can b& used for the protection of duel-win ding or multi-windIng transformers which are provided with one or more circuitbreakers for each winding. TTie relay is available in different

BY550-1000

Abstract: BY550-50 DO-27A
Contextual Info: 7E D 3 4 5 T 32 S 0 G D D 75 5 TSÔ • F 6 R S BY550-50.BY550-1000 FAGOR FAG OR E L E C T R O N I C S tip. Silicon Rectifier Di Dim ensions in mm. s DO-201AD DO-27A Plastic Voltage 50 to 1.000 V. CO — 1 Current 5.0 A. at 60°C. I L_ P-3 *0-3

fag 45

Abstract: FA60R RGP15 RGP15A
Contextual Info: S7E ® 3 4 S ^ 3 SS GOOObflfi 2 5 0 • F G R S r b r !i a FAG OR E L E C T R O N I C S Dimensions in mm. oo SÌ— s1 o to O cj _n— _ ^ RGP15A. RGP15AM -po^-i 5 DO-15 Plastic Voltage 50 to 1.000 V. Current 1.5 A. at 55 °C. I 6.35 toa Mountiiig instructions

fag 45

Abstract: semikron skiip 47056 29AHB08V1 semikron skiip 81 AN
Contextual Info: SKiiP 29AHB08V1 Absolute Maximum Ratings Symbol Conditions IGBT - Chopper -%1  8 -%1  . /0    #    . )( 45+6 /  . )( 45+6 / 0 # 9 7 3 ; Values Units &+ 7(+ 477'6 '+ 4)&6 : 7(   - < =+ $$$ > 7(+ / 775 4@&6 )'= 475)6

semikron skiip 81 AN

Abstract: 47056 fag 45
Contextual Info: SKiiP 29ANB08V1 Absolute Maximum Ratings Symbol Conditions IGBT - Chopper -%1  8 -%1  . /0    #    . )( 45+6 /  . )( 45+6 / 0 # 9 7 3 ; Values Units &+ 7(+ 477'6 '+ 4)&6 : 7(   - < =+ $$$ > 7(+ / 775 4@&6 )'= 475)6

8569A

Abstract: cbc 214 b o620 dfcj gg 69
Contextual Info: 86@0 @=:94 @A1A5 ?5:1E 6JGUVSJT V t=9@97HF=7 GHF9B;H< gjee/ V kee/ 6@C7?=B; JC@H5;9 V ~<CHC =GC@5H=CB V 39FC 7FCGG CF F5B8CA HIFBbCB V ~F=BH98 7=F7I=H 6C5F8 ACIBH V uBJ=FCBA9BH5@ :F=9B8@M DFC8I7H ^+Cx, 7CAD@=5BH_ v=@9 |Cco s*segeefeefnih 9<>BA ^-5 p gj 45@3?9>A9=<

Contextual Info: SKiiP 10NAB12T4V1 CONVERTER, INVERTER, BRAKE Absolute Maximum Ratings Symbol Conditions IGBT - Inverter, Chopper *%4  = * %4  - 1+    "   - )( 3<85 1 6 Values Units 0)88 & 3&5 0) > )8 *   * 9 8 $$$ : 0<( 1 0( 30)5 )

Contextual Info: SKiiP 10NAB12T4V1 CONVERTER, INVERTER, BRAKE Absolute Maximum Ratings Symbol Conditions IGBT - Inverter, Chopper *%4  = * %4  - 1+    "   - )( 3<85 1 6 Values Units 0)88 & 3&5 0) > )8 *   * 9 8 $$$ : 0<( 1 0( 30)5 )

Contextual Info: SKiiP 34NAB12T4V1 CONVERTER, INVERTER, BRAKE Absolute Maximum Ratings Symbol Conditions IGBT - Inverter, Chopper *%4  = * %4  - 1+    "   - )( 3<85 1 6 Values Units 0)88 () 3 '5 08( > )8 *   * 9 8 $$$ : 0<( 1 3'(5 08(

semikron skiip nab 12

Abstract: SKIIP10NAB12T4V1
Contextual Info: SKiiP 10NAB12T4V1 CONVERTER, INVERTER, BRAKE Absolute Maximum Ratings Symbol Conditions IGBT - Inverter, Chopper *%4  = * %4  - 1+    "   - )( 3<85 1 6 Values Units 0)88 & 3&5 0) > )8 *   * 9 8 $$$ : 0<( 1 0( 30)5 )

SKiiP 34NAB12T4V1

Abstract: semikron skiip nab 12
Contextual Info: SKiiP 34NAB12T4V1 CONVERTER, INVERTER, BRAKE Absolute Maximum Ratings Symbol Conditions IGBT - Inverter, Chopper *%4  = * %4  - 1+    "   - )( 3<85 1 6 Values Units 0)88 () 3 '5 08( > )8 *   * 9 8 $$$ : 0<( 1 3'(5 08(

on 707

Abstract: 8569A AC89 GBI669F UB-75 j9bh 8jd8h
Contextual Info: 86@/ @=:94 @A1A5 ?5:1E 6JGUVSJT V ts =BDIHbqs CIHDIH :CF gq @C58 5H gj V ~<CHC =GC@5H=CB v=@9 |Cco ufhhimf V rI=@Hb=B GBI669F V 39FC 7FCGG CF F5B8CA HIFBbCB V ~F=BH98 7=F7I=H 6C5F8 ACIBH V uBJ=FCBA9BH5@ :F=9B8@M DFC8I7H ^+Cx, 7CAD@=5BH_ v=@9 |Cco s*segeefeefnik

ECG Cross Reference

Abstract: LEMO "00" connector male Lemo 5K marking EHG m9x0.6
Contextual Info: ® Step 1: Select Connector Series LEMO unipole and multipole connectors The standard keyed Series B, 00, G The characteristic feature of these connector series is a keying system which allows higher contact density and prevents all errors in alignment. The various keying alternatives prevent unwanted cross mating of otherwise similar connectors. It

FAG 32 diode

Abstract: pj 82 diode M/diode fag 45 diode FAG 50 FAG 50 diode
Contextual Info: FAGOR ^ T ransient Voltage Suppressor Diodes 1. INTRODUCTION They are P-N junctions m ade from silicon, formed through a diffusion process, with zener breakdown, avalanche , and specifically conceived to limit over voltages and dissipate high transient pow er with very short response times (1 pico sec) (1CH).

BZY88

Abstract: zener c23 BZY88 5V1 zener diode bzy88 BZY88-G8V2 bzy68c BZY68-C6V8 bzy88c BZY83 BZY88-CSV6
Contextual Info: Tfl FAGOR ELECTRON ICS D eT J 3 4 5 tì325 D O D O n ] BZY88C5V1 FAGO R ^ T - l~u 0,5 W Zener Diodes Dimensions in mm. (inches BZY88C33V 98D 0 0 1 9 3 3 4 5 9 3 2 5 FAGOR ELECTRONICS DO-35 (Glass) Voltage 5.1 to 33 V. Power to £ 2O 0.5 W (0.149) 3.8 -s s1

KTC3879Y

Abstract: KTC3879
Contextual Info: _ SEMICONDUCTOR KTC3879 TECHNICAL DA TA KOREA ELECTRONICS CO.,LTD. EPITAXIAL PLANAR NPN TRANSISTOR HIGH FREQUENCY APPLICATION. HF, VHF BAND AMPLIFIER APPLICATION. FEATURE • High Power Gain : Gpe=29dB Typ. (f=10.7MHz) MAXIMUM RATINGS (Ta=25°C) SYMBOL RATING