FAIRCHILD 1275 Search Results

1n813 fairchild

Abstract: 2N3303 abb inverter manual acs 800 FD6666 diode 2N3137 UA703 equivalent FD200 diode 2N2369 AVALANCHE PULSE GENERATOR UA716 Fairchild dtl catalog
Contextual Info: Fairchild Semiconductor Dab Cataloi 196! The Fairchild Semiconductor Data Cataloc — an all-inclusive volume of product infor mation covering diodes, transistors, digita and linear integrated circuits, MSI and LS devices from the world's largest suppliei

Germanium drift transistor

Abstract: 2N4895 germanium transistor epitaxial mesa transistor sec tip31A halbleiter index transistor transistor BD222 BD699 EQUIVALENT kd 2060 transistor
Contextual Info: POWER DATA BOOK FAIRCHILD 464 Ellis Street, Mountain View, California 94042 1976 Fairchild Camera and Instrum ent C orporation/464 Ellis Street, M ountain View, California 940 4 2 / 4 15 9 6 2 -5 0 1 1/TW X 910 -3 7 9-6 4 3 5 INTRODUCTION You, the customer, and your needs have dictated the form at and contents of

sn76131

Abstract: sn76670 uA703 ua702 Fairchild dtl catalog ca3458 UA703 equivalent UA740 703HC lm741
Contextual Info: FAIRCHILD SEMICONDUCTOR THE LINEAR INTE INTRODUCTION NUMERICAL INDEX OPERATIONAL AMPLIFIERS COMPARATORS Each Product Sectio n Contains The Follow ing Categories O rganized By Function Index Selection Guide Data Sh e e ts G lo ssary VOLTAGE REGULATORS COMPUTER/INTERFACE

fdb fairchild

Abstract: FDB86102 process of mosfet FDB86102LZ
Contextual Info: FDB86102LZ N-Channel PowerTrench MOSFET 100 V, 30 A, 24 mΩ Features General Description „ Max rDS on = 24 mΩ at VGS = 10 V, ID = 8.3 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and

Contextual Info: FDB86102LZ N-Channel PowerTrench MOSFET 100 V, 30 A, 24 mΩ Features General Description ̈ Max rDS on = 24 mΩ at VGS = 10 V, ID = 8.3 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and

TMC1175

Abstract: TMC1275 324Q
Contextual Info: FAIRCHILD www.fairchildsemi.com s e m i c o n d u c t o r tm TMC1 1 7 5A /T M C 1 275 V i d e o A/D C o n v e r t e r 8 bi t , 50 M s p s Features • 8-Bit resolution • 50 M sps conversion rate • Low power: lOOmW at 20 M sps • Integral track/hold • Integral and differential linearity error 0.5 LSB

H11G2M

Contextual Info: H11G1M, H11G2M, H11G3M High Voltage Photodarlington Optocouplers Features General Description • High BVCEO The H11GXM series are photodarlington-type optically coupled optocouplers. These devices have a gallium arsenide infrared emitting diode coupled with a silicon

MOC8050M

Abstract: MOC8021M MOC8050SM MOC8050SR2M MOC8050SVM MOC8050TM MOC8050TVM MOC8050VM optocoupler no base connection fairchild optocoupler
Contextual Info: MOC8021M, MOC8050M Photodarlington Optocoupler No Base Connection Features Description • High BVCEO The MOC8021M and MOC8050M are photodarlingtontype optically coupled optocouplers. The devices have a gallium arsenide infrared emitting diode coupled with a

H11AG1M

Abstract: CC 4093 N 1N4148 74HC14
Contextual Info: H11AG1M Phototransistor Optocoupler Features Description • High efficiency low degradation liquid epitaxial IRED The H11AG1M device consists of a Gallium-AluminumArsenide IRED emitting diode coupled with a silicon phototransistor in a dual in-line package. This device

MOC119M

Abstract: MOC119SM MOC119SR2M MOC119TM fairchild optocoupler
Contextual Info: MOC119M Photodarlington Optocoupler No Base Connection Features Description • High current transfer ratio of 300% The MOC119M device has a gallium arsenide infrared emitting diode coupled to a silicon darlington phototransistor. ■ No base connection for improved noise immunity

Contextual Info: MOC8021M, MOC8050M Photodarlington Optocoupler No Base Connection Features Description • High BVCEO The MOC8021M and MOC8050M are photodarlingtontype optically coupled optocouplers. The devices have a gallium arsenide infrared emitting diode coupled with a

Contextual Info: H11N1M, H11N2M, H11N3M 6-Pin DIP High Speed Logic Optocouplers Features Description • High data rate, 5MHz typical NRZ The H11NXM series has a high speed integrated circuit detector optically coupled to an AlGaAs infrared emitting diode. The output incorporates a Schmitt trigger, which

H11AA4M

Abstract: H11AA2M H11AA1M H11AA1SM H11AA1SR2M H11AA1TM H11AA1VM H11AA3M H11AA1T H11AA1MS
Contextual Info: H11AA1M, H11AA2M, H11AA3M, H11AA4M AC Input/Phototransistor Optocouplers Features Description • Bi-polar emitter input The H11AAXM series consists of two gallium-arsenide infrared emitting diodes connected in inverse parallel driving a single silicon phototransistor output.

MOC304X

Abstract: MOC3043-M application notes inverse-parallel scr drive circuit Optocoupler with triac MOC3041-M application notes 3 kw triac how to interface optocoupler with triac MOC3032M MOC3033M MOC3042M
Contextual Info: MOC3031M, MOC3032M, MOC3033M, MOC3041M, MOC3042M, MOC3043M 6-Pin DIP Zero-Cross Optoisolators Triac Driver Output 250/400 Volt Peak Features Description • Simplifies logic control of 115 VAC power The MOC303XM and MOC304XM devices consist of a AlGaAs infrared emitting diode optically coupled to a

MCT2EM

Contextual Info: MCT2M, MCT2EM, MCT210M, MCT271M Phototransistor Optocouplers Features Description • UL recognized File # E90700, Vol. 2 The MCT2XXM series optoisolators consist of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 6-pin dual in-line package.

optocoupler mct2e

Abstract: IEC60747-5-2 MCT210M MCT271M ultra low voltage detector
Contextual Info: MCT2M, MCT2EM, MCT210M, MCT271M Phototransistor Optocouplers Features Description • UL recognized File # E90700, Vol. 2 The MCT2XXM series optoisolators consist of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 6-pin dual in-line package.

TIL111M

Abstract: MOC8100M TIL111VM TIL117M TIL111SM TIL111SR2M TIL111SVM TIL111TM TIL111TVM
Contextual Info: TIL111M, TIL117M, MOC8100M General Purpose 6-Pin Phototransistor Optocouplers Features General Description • UL recognized File # E90700 The MOC8100M, TIL111M and TIL117M optocouplers consist of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 6-pin dual in-line

CNY17F2M

Abstract: MOC810XM CNY171M CNY172M CNY173M CNY174M CNY17F1M CNY17F3M CNY17F4M
Contextual Info: CNY171M, CNY172M, CNY173M, CNY174M, CNY17F1M, CNY17F2M, CNY17F3M, CNY17F4M, MOC8106M, MOC8107M Phototransistor Optocouplers Features Description • UL recognized File # E90700, Vol. 2 The CNY17XM, CNY17FXM and MOC810XM devices consist of a Gallium Arsenide IRED coupled with an NPN

CNY173M

Contextual Info: CNY171M, CNY172M, CNY173M, CNY174M, CNY17F1M, CNY17F2M, CNY17F3M, CNY17F4M, MOC8106M, MOC8107M Phototransistor Optocouplers Features Description • UL recognized File # E90700, Vol. 2 The CNY17XM, CNY17FXM and MOC810XM devices consist of a Gallium Arsenide IRED coupled with an NPN

scr c 107 d1

Abstract: MOC3042M 8 pin relay device 220 volt
Contextual Info: MOC3031M, MOC3032M, MOC3033M, MOC3041M, MOC3042M, MOC3043M 6-Pin DIP Zero-Cross Optoisolators Triac Driver Output 250/400 Volt Peak Features Description • Simplifies logic control of 115 VAC power The MOC303XM and MOC304XM devices consist of a GaAs infrared emitting diode optically coupled to a

H11AG1M

Contextual Info: H11AG1M Phototransistor Optocoupler Features Description • High efficiency low degradation liquid epitaxial IRED The H11AG1M device consists of a Gallium-AluminumArsenide IRED emitting diode coupled with a silicon phototransistor in a dual in-line package. This device

H11N1

Abstract: H11N1M H11N1VM H11N2 H11N2M H11N3 H11N3M
Contextual Info: H11N1M, H11N2M, H11N3M 6-Pin DIP High Speed Logic Optocouplers Features Description • High data rate, 5MHz typical NRZ The H11NXM series has a high speed integrated circuit detector optically coupled to an AlGaAs infrared emitting diode. The output incorporates a Schmitt trigger, which

IEC60747-5-2

Abstract: MOC8111M MOC8111SM MOC8111SR2M MOC8111TM MOC8112M MOC8113M
Contextual Info: MOC8111M, MOC8112M, MOC8113M 6-Pin DIP Optocoupler for Power Supply Applications No Base Connection Features Description • High isolation voltage The MOC811XM series consists of a Gallium Arsenide IRED coupled with an NPN phototransistor. The base of the transistor is not bonded to an external pin for

datasheet 4n29 optocoupler

Abstract: til113 4N29M 4N30M 4N32M 4N32SM 4N32SR2M 4N33M H11B1M TIL113M
Contextual Info: 4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M General Purpose 6-Pin Photodarlington Optocoupler Features Description • High sensitivity to low input drive current The 4N29M, 4N30M, 4N32M, 4N33M, H11B1M and TIL113M have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington.