FAIRCHILD 1275 REGULATOR Search Results

MOC8100M

Contextual Info: TIL111M, TIL117M, MOC8100M General Purpose 6-Pin Phototransistor Optocouplers Features General Description • UL Recognized File # E90700 The MOC8100M, TIL111M, and TIL117M optocouplers consist of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 6-pin dual in-line

IRFP140

Abstract: TA17421 TB334
Contextual Info: NS ESIG D W R NE UCT D FO E PROD E D N T MME BSTITU U ECOSheet N S R Data 4 E T NO FP1 SIBL R I S O P Title FP1 bt A, 0V, 77 m, wer OST utho eyrds A, 0V, 77 m, June 2000 31A, 100V, 0.077 Ohm, N-Channel Power MOSFET Features This N-Channel enhancement mode silicon gate power field

IRF640 applications note

Abstract: irf640 RF1S640SM9A TA17422 power MOSFET IRF640 RF1S640 RF1S640SM TB334
Contextual Info: IRF640, RF1S640SM Data Sheet Title F64 1S6 SM bt A, 0V, 80 m, 18A, 200V, 0.180 Ohm, N-Channel Power MOSFETs Features These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a

IRFP240 transistor

Contextual Info: IRFP240 Data Sheet Title FP2 bt A, 0V, 80 m, 20A, 200V, 0.180 Ohm, N-Channel Power MOSFET Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of

IRFP240

Abstract: irfp240 transistor TA17422 TB334
Contextual Info: IRFP240 Data Sheet January 2002 20A, 200V, 0.180 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of

IRFP140

Abstract: Relays 12v 31A TA17421 TB334
Contextual Info: IGNS DES W E T OR N DUC ED F TE PRO D N MME BSTITU ECOSheet SU R 0N Data January 2002 T NO IBLE IRFP14 S S PO 31A, 100V, 0.077 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed,

25E 106

Abstract: H11D1M
Contextual Info: 4N38M, H11D1M, H11D2M, H11D3M, MOC8204M High Voltage Phototransistor Optocouplers Features General Description • High voltage: The 4N38M, H11DXM and MOC8204M are phototransistor-type optically coupled optoisolators. A gallium arsenide infrared emitting diode is coupled with a high

IEC60747-5-2

Abstract: MOC8111M MOC8111SM MOC8111SR2M MOC8111TM MOC8112M MOC8113M
Contextual Info: MOC8111M, MOC8112M, MOC8113M 6-Pin DIP Optocoupler for Power Supply Applications No Base Connection Features Description • High isolation voltage The MOC811XM series consists of a Gallium Arsenide IRED coupled with an NPN phototransistor. The base of the transistor is not bonded to an external pin for

H11D1M

Abstract: MOC8204M 4N38M H11D1 H11D2M H11D3M
Contextual Info: 4N38M, H11D1M, H11D2M, H11D3M, MOC8204M High Voltage Phototransistor Optocouplers Features General Description • High voltage: The 4N38M, H11DXM and MOC8204M are phototransistor-type optically coupled optoisolators. A gallium arsenide infrared emitting diode is coupled with a high

H11AV1M

Contextual Info: H11AV1M, H11AV1AM, H11AV2M, H11AV2AM Phototransistor Optocouplers Features Description • H11AV1M and H11AV2M feature 0.3" input-output The general purpose optocouplers consist of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 6-pin dual in-line white package.

linear applications of power MOSFET IRF640

Abstract: power MOSFET IRF640 IRF640 applications note for irf640 irf640 IRF640 application note IRF640 field-effect power transistor RF1S640SM9A RF1S640 RF1S640SM
Contextual Info: IRF640, RF1S640, RF1S640SM Data Sheet January 2002 18A, 200V, 0.180 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a

H11AXM

Abstract: 4N35M H11Ax 4N25M 4N26M 4N27M 4N28M 4N36M 4N37M H11A1M
Contextual Info: 4N25M, 4N26M, 4N27M, 4N28M, 4N35M, 4N36M, 4N37M, H11A1M, H11A2M, H11A3M, H11A4M, H11A5M General Purpose 6-Pin Phototransistor Optocouplers Features Description • UL recognized File # E90700, Volume 2 The general purpose optocouplers consist of a gallium

H11AV1M

Abstract: H11AV1AM H11AV1AVM H11AV1SM H11AV1SR2M H11AV2AM H11AV2M H11AV2SM
Contextual Info: H11AV1M, H11AV1AM, H11AV2M, H11AV2AM Phototransistor Optocouplers Features Description • H11AV1M and H11AV2M feature 0.3" input-output The general purpose optocouplers consist of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 6-pin dual in-line white package.

TIL111M

Abstract: MOC8100M TIL111VM TIL117M TIL111SM TIL111SR2M TIL111SVM TIL111TM TIL111TVM
Contextual Info: TIL111M, TIL117M, MOC8100M General Purpose 6-Pin Phototransistor Optocouplers Features General Description • UL recognized File # E90700 The MOC8100M, TIL111M and TIL117M optocouplers consist of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 6-pin dual in-line

CNY173M

Contextual Info: CNY171M, CNY172M, CNY173M, CNY174M, CNY17F1M, CNY17F2M, CNY17F3M, CNY17F4M, MOC8106M, MOC8107M Phototransistor Optocouplers Features Description • UL recognized File # E90700, Vol. 2 The CNY17XM, CNY17FXM and MOC810XM devices consist of a Gallium Arsenide IRED coupled with an NPN

MCT2EM

Contextual Info: MCT2M, MCT2EM, MCT210M, MCT271M Phototransistor Optocouplers Features Description • UL recognized File # E90700, Vol. 2 The MCT2XXM series optoisolators consist of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 6-pin dual in-line package.

optocoupler mct2e

Abstract: IEC60747-5-2 MCT210M MCT271M ultra low voltage detector
Contextual Info: MCT2M, MCT2EM, MCT210M, MCT271M Phototransistor Optocouplers Features Description • UL recognized File # E90700, Vol. 2 The MCT2XXM series optoisolators consist of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 6-pin dual in-line package.

MOC8100M

Contextual Info: TIL111M, TIL117M, MOC8100M General Purpose 6-Pin Phototransistor Optocouplers Features General Description • UL recognized File # E90700 The MOC8100M, TIL111M and TIL117M optocouplers consist of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 6-pin dual in-line

6Pin LED Driver

Abstract: ft 107 triac MOC3052M
Contextual Info: MOC3051M, MOC3052M 6-Pin DIP Random-Phase Optoisolators Triac Drivers 600 Volt Peak Features Description • Excellent IFT Stability—IR Emitting Diode Has Low The MOC3051M and MOC3052M consist of a GaAs infrared emitting diode optically coupled to a non-zerocrossing silicon bilateral AC switch (triac). These devices

BC107BP

Abstract: TRANSISTOR BC107BP Rudy Severns TRANSISTOR DATASHEET BC107BP Severns uA555 TRANSISTOR DATASHEET BC107B Datasheet for BC107B BJT "Safe Operating Area and Thermal Design" silicon LM10CN
Contextual Info: MEETING TRANSIENT SPECIFICATIONS FOR ELECTRICAL SYSTEMS IN MILITARY VEHICLES By Arthur Jordan Sr. Applications Engineer, Vicor Electrical systems in military vehicles are normally required to meet stringent transient requirements. Typical of these specifications are MIL-STD-1275B in the U.S.A. and DEF-STAN

Contextual Info: MOC3051M, MOC3052M 6-Pin DIP Random-Phase Optoisolators Triac Drivers 600 Volt Peak Features Description • Excellent IFT Stability—IR Emitting Diode Has Low The MOC3051M and MOC3052M consist of a GaAs infrared emitting diode optically coupled to a non-zerocrossing silicon bilateral AC switch (triac). These devices

current buffer ic 20ma 150ma

Abstract: MAX8710 MAX8710ETG MAX8711 MAX8711ETE MAX8712 MAX8712ETC
Contextual Info: 19-3174; Rev 0; 1/04 KIT ATION EVALU E L B AVAILA Low-Cost Linear-Regulator LCD Panel Power Supplies The MAX8710/MAX8711/MAX8712 offer complete linear-regulator power-supply solutions for thin-film transistor TFT liquid-crystal-display (LCD) panels used in

current buffer ic 20ma 150ma

Abstract: MAX8710 MAX8711 MAX8712 MAX8761
Contextual Info: 19-3174; Rev 1; 10/05 KIT ATION EVALU LE B A IL A AV Low-Cost, Linear-Regulator LCD Panel Power Supplies The MAX8710/MAX8711/MAX8712/MAX8761 offer complete linear-regulator power-supply solutions for thin-film transistor TFT liquid-crystal-display (LCD) panels used

fault finding all type of lcd tv file

Abstract: pass transistor 2545 power n-channel mosfet
Contextual Info: 19-3174; Rev 1; 10/05 KIT ATION EVALU LE B A IL A AV Low-Cost, Linear-Regulator LCD Panel Power Supplies The MAX8710/MAX8711/MAX8712/MAX8761 offer complete linear-regulator power-supply solutions for thin-film transistor TFT liquid-crystal-display (LCD) panels used