FAIRCHILD FIELD EFFECT TRANSISTOR Search Results

NDS352AP

Abstract: supersot-3
Contextual Info: February 1997 FAIRCHILD Ml C O N D U C T O R i NDS352AP P-Channel Logic Level Enhancement Mode Field Effect Transistor Features G eneral D escription These P -Channel logic level enhancement mode power field effect transistors are produced using Fairchild’s proprietary,

PCTI

Abstract: si8102 NDH8502P
Contextual Info: FAIRCHILD Decem ber 1996 iM IC G N D U C T O R 1 NDH8502P Dual P-Channel Enhancement Mode Field Effect Transistor G eneral D escription Features SuperSOT -8 P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary,

NDP603AL

Abstract: NDB603AL
Contextual Info: FAIRCHILD SEMICDNDUCTOR January 1996 tm NDP603AL / NDB603AL N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's

CBVK741B019

Abstract: F63TNR F852 FDT439N PN2222A 63a30
Contextual Info: FDT439N N-Channel 2.5V Specified Enhancement Mode Field Effect Transistor General Description Features This N-Channel Enhancement mode field effect transistor is produced using Fairchild Semiconductor's proprietary, high cell density, DMOS technology. This very high

63a17

Abstract: FDT439N SOT223
Contextual Info: FDT439N N-Channel 2.5V Specified Enhancement Mode Field Effect Transistor General Description Features This N-Channel Enhancement mode field effect transistor is produced using Fairchild Semiconductor's proprietary, high cell density, DMOS technology. This very high

NDS355N

Contextual Info: March 1996 FAIRCHILD MICDNDUCTDR t m NDS355N N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary,

Contextual Info: FDT439N N-Channel 2.5V Specified Enhancement Mode Field Effect Transistor General Description Features This N-Channel Enhancement mode field effect transistor is produced using Fairchild Semiconductor's proprietary, high cell density, DMOS technology. This very high

F852 transistor

Contextual Info: FDT439N N-Channel 2.5V Specified Enhancement Mode Field Effect Transistor General Description Features This N-Channel Enhancement mode field effect transistor is produced using Fairchild Semiconductor's proprietary, high cell density, DMOS technology. This very high

FDD603AL

Contextual Info: FDD603AL N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features This N-Channel logic level enhancement mode power field effect transistor is produced using Fairchild’s proprietary, high cell density, DMOS technology. This

FDD6030L

Contextual Info: FDD6030L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This

FDD6030L

Abstract: CBVK741B019 F63TNR FDD6680
Contextual Info: FDD6030L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This

CBVK741B019

Abstract: F63TNR FDD603AL FDD6680
Contextual Info: FDD603AL N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features This N-Channel logic level enhancement mode power field effect transistor is produced using Fairchild’s proprietary, high cell density, DMOS technology. This

FDD6030L

Abstract: CBVK741B019 F63TNR FDD6680 FDD marking
Contextual Info: FDD6030L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This

Contextual Info: FAIRCHILD SEM IC ONDUCTO R February 1997 tm NDS352AP P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These P -Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary,

NDB6030PL

Abstract: NDP6030PL 10v70
Contextual Info: June 1 997 FAIRCHILD MICDNDUCTDR t m NDP6030PL / NDB6030PL P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary,

Contextual Info: FAIRCHILD SEM IC ONDUCTO R February 1997 tm NDS9410S Single N-Channel Enhancement Mode Field Effect Transistor General Description Features SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell

Contextual Info: FAIRCHILD SEM IC ONDUCTO R March 1996 tm NDP7050L / NDB7050L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary,

ARDV sot 23

Abstract: DS332P
Contextual Info: June 1997 FAIRCHILD M ICON DUCTOR tm NDS332P P-Channel Logic Level Enhancement Mode Field Effect Transistor G eneral Description Features These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high

Contextual Info: FAIRCHILD February 1997 SEM ICONDUCTO R NDS8410S Single N-Channel Enhancement Mode Field Effect Transistor Features G eneral D escription SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell

Contextual Info: FAIRCHILD February 1996 SEM ICONDUCTO R NDS8410 Single N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect • 10A, 30V. R ^ , = 0.015Q @ VGS = 10V RDS ON| = 0.020n @ Vgs = 4.5V.

Contextual Info: May 1997 FAIRCHILD M ICONDUCTDR NDH8321C Dual N & P-Channel Enhancement Mode Field Effect Transistor G eneral Description Features These dual N - and P -Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS

FDS9936A

Abstract: SOIC-16 apad design
Contextual Info: May 1998 FAIRCHILD IMICDNDUCTDR- FDS9936A Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density

zener diode 46a

Abstract: NDB6030 NDP6030 46A9
Contextual Info: July 1997 FAIRCHILD IMICDNDUCTDR- NDP6030 / NDB6030 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has

zener diode t5

Abstract: NDB4050 NDP4050
Contextual Info: July 1996 FAIRCHILD MICDNDUCTDR i NDP4050 / NDB4050 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high