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    FAIRCHILD FIELD EFFECT TRANSISTOR Search Results

    FAIRCHILD FIELD EFFECT TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    FAIRCHILD FIELD EFFECT TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CBVK741B019

    Abstract: F63TNR F852 FDT439N PN2222A 63a30
    Text: FDT439N N-Channel 2.5V Specified Enhancement Mode Field Effect Transistor General Description Features This N-Channel Enhancement mode field effect transistor is produced using Fairchild Semiconductor's proprietary, high cell density, DMOS technology. This very high


    Original     		PDF FDT439N CBVK741B019 F63TNR F852 FDT439N PN2222A 63a30

    63a17

    Abstract: FDT439N SOT223
    Text: FDT439N N-Channel 2.5V Specified Enhancement Mode Field Effect Transistor General Description Features This N-Channel Enhancement mode field effect transistor is produced using Fairchild Semiconductor's proprietary, high cell density, DMOS technology. This very high


    Original     		PDF FDT439N 63a17 FDT439N SOT223

    Untitled

    Abstract: No abstract text available
    Text: FDT439N N-Channel 2.5V Specified Enhancement Mode Field Effect Transistor General Description Features This N-Channel Enhancement mode field effect transistor is produced using Fairchild Semiconductor's proprietary, high cell density, DMOS technology. This very high


    Original     		PDF FDT439N

    F852 transistor

    Abstract: No abstract text available
    Text: FDT439N N-Channel 2.5V Specified Enhancement Mode Field Effect Transistor General Description Features This N-Channel Enhancement mode field effect transistor is produced using Fairchild Semiconductor's proprietary, high cell density, DMOS technology. This very high


    Original     		PDF FDT439N F852 transistor

    FDD603AL

    Abstract: No abstract text available
    Text: FDD603AL N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features This N-Channel logic level enhancement mode power field effect transistor is produced using Fairchild’s proprietary, high cell density, DMOS technology. This


    Original     		PDF FDD603AL FDD603AL

    FDD6030L

    Abstract: No abstract text available
    Text: FDD6030L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This


    Original     		PDF FDD6030L FDD6030L

    FDD6030L

    Abstract: CBVK741B019 F63TNR FDD6680
    Text: FDD6030L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This


    Original     		PDF FDD6030L FDD6030L CBVK741B019 F63TNR FDD6680

    CBVK741B019

    Abstract: F63TNR FDD603AL FDD6680
    Text: FDD603AL N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features This N-Channel logic level enhancement mode power field effect transistor is produced using Fairchild’s proprietary, high cell density, DMOS technology. This


    Original     		PDF FDD603AL CBVK741B019 F63TNR FDD603AL FDD6680

    FDD6030L

    Abstract: CBVK741B019 F63TNR FDD6680 FDD marking
    Text: FDD6030L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This


    Original     		PDF FDD6030L FDD6030L CBVK741B019 F63TNR FDD6680 FDD marking

    NDS352AP

    Abstract: supersot-3
    Text: February 1997 FAIRCHILD Ml C O N D U C T O R i NDS352AP P-Channel Logic Level Enhancement Mode Field Effect Transistor Features G eneral D escription These P -Channel logic level enhancement mode power field effect transistors are produced using Fairchild’s proprietary,


    OCR Scan     		PDF NDS352AP NDS352AP supersot-3

    PCTI

    Abstract: si8102 NDH8502P
    Text: FAIRCHILD Decem ber 1996 iM IC G N D U C T O R 1 NDH8502P Dual P-Channel Enhancement Mode Field Effect Transistor G eneral D escription Features SuperSOT -8 P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary,


    OCR Scan     		PDF NDH8502P NDH8502P PCTI si8102

    NDP603AL

    Abstract: NDB603AL
    Text: FAIRCHILD SEMICDNDUCTOR January 1996 tm NDP603AL / NDB603AL N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's


    OCR Scan     		PDF NDP603AL NDB603AL NDB603AL

    NDS355N

    Abstract: No abstract text available
    Text: March 1996 FAIRCHILD MICDNDUCTDR t m NDS355N N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary,


    OCR Scan     		PDF NDS355N

    Untitled

    Abstract: No abstract text available
    Text: FAIRCHILD SEM IC ONDUCTO R February 1997 tm NDS352AP P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These P -Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary,


    OCR Scan     		PDF NDS352AP NDS352Ap

    NDB6030PL

    Abstract: NDP6030PL 10v70
    Text: June 1 997 FAIRCHILD MICDNDUCTDR t m NDP6030PL / NDB6030PL P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary,


    OCR Scan     		PDF NDP6030PL NDB6030PL 10v70

    Untitled

    Abstract: No abstract text available
    Text: FAIRCHILD SEM IC ONDUCTO R February 1997 tm NDS9410S Single N-Channel Enhancement Mode Field Effect Transistor General Description Features SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell


    OCR Scan     		PDF NDS9410S NDS9410S

    Untitled

    Abstract: No abstract text available
    Text: FAIRCHILD SEM IC ONDUCTO R March 1996 tm NDP7050L / NDB7050L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary,


    OCR Scan     		PDF NDP7050L NDB7050L

    ARDV sot 23

    Abstract: DS332P
    Text: June 1997 FAIRCHILD M ICON DUCTOR tm NDS332P P-Channel Logic Level Enhancement Mode Field Effect Transistor G eneral Description Features These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high


    OCR Scan     		PDF NDS332P ARDV sot 23 DS332P

    Untitled

    Abstract: No abstract text available
    Text: FAIRCHILD February 1997 SEM ICONDUCTO R NDS8410S Single N-Channel Enhancement Mode Field Effect Transistor Features G eneral D escription SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell


    OCR Scan     		PDF NDS8410S

    Untitled

    Abstract: No abstract text available
    Text: FAIRCHILD February 1996 SEM ICONDUCTO R NDS8410 Single N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect • 10A, 30V. R ^ , = 0.015Q @ VGS = 10V RDS ON| = 0.020n @ Vgs = 4.5V.


    OCR Scan     		PDF NDS8410 NDSS41

    Untitled

    Abstract: No abstract text available
    Text: May 1997 FAIRCHILD M ICONDUCTDR NDH8321C Dual N & P-Channel Enhancement Mode Field Effect Transistor G eneral Description Features These dual N - and P -Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS


    OCR Scan     		PDF NDH8321C 8321C

    FDS9936A

    Abstract: SOIC-16 apad design
    Text: May 1998 FAIRCHILD IMICDNDUCTDR- FDS9936A Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density


    OCR Scan     		PDF FDS9936A FDS9936A SOIC-16 apad design

    zener diode 46a

    Abstract: NDB6030 NDP6030 46A9
    Text: July 1997 FAIRCHILD IMICDNDUCTDR- NDP6030 / NDB6030 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has


    OCR Scan     		PDF NDP6030 NDB6030 NDP6030. zener diode 46a NDB6030 46A9

    zener diode t5

    Abstract: NDB4050 NDP4050
    Text: July 1996 FAIRCHILD MICDNDUCTDR i NDP4050 / NDB4050 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high


    OCR Scan     		PDF NDP4050 NDB4050 zener diode t5 NDB4050