FAIRCHILD GEZ Search Results

SAC 1630 L

Abstract: 34ba
Contextual Info: SMCJ5.0 C A - SMCJ170(C)A FAIRCHILD s e m ic o n d u c t o r SMCJ5.0(C)A - SMCJ170(C)A Features • Glass passivated junction. • 1500 W Peak Pulse Power capability on 10/1000 ps waveform. • Excellent clamping capability. • Low incremental surge resistance.

Contextual Info: SMCJ5V0 C A - SMCJ170(C)A 1500 Watt Transient Voltage Suppressors Features • Glass-Passivated Junction • 1500 W Peak Pulse Power Capability on 10/1000 s Waveform. • Excellent Clamping Capability • Low-Incremental Surge Resistance • Fast Response Time: Typically Less than 1.0 ps

Contextual Info: Features • • • • • • 0.280 7.112 0.260 (6.604) Glass passivated junction. 1500 W Peak Pulse Power capability on 10/1000 µs waveform. Excellent clamping capability. Low incremental surge resistance. Fast response time; typically less than 1.0 ps from 0 volts to BV for

BFM SMC

Abstract: b34 marking smc bem 129 gez FAIRCHILD GHM marking code B34 MBRS340
Contextual Info: SMCJ5.0 C A - SMCJ170(C)A SMCJ5.0(C)A - SMCJ170(C)A Features • • • • • • Glass passivated junction. 1500 W Peak Pulse Power capability on 10/1000 µs waveform. Excellent clamping capability. Low incremental surge resistance. Fast response time; typically less

gfx do-214ab

Abstract: FAIRCHILD MBRS340 equivalent of BFT 51 b34 diode Diode 133 B34 diode GFP AA diode smc bfk marking code B34 gex smc SMCJ11
Contextual Info: SMCJ5.0 C A - SMCJ170(C)A SMCJ5.0(C)A - SMCJ170(C)A Features • • • • • • • Glass passivated junction. 1500 W Peak Pulse Power capability on 10/1000 µs waveform. Excellent clamping capability. Low incremental surge resistance. Fast response time; typically less

marking code B34

Abstract: DO-214AB b34 FAIRCHILD MBRS340 gdv 64 a
Contextual Info: SMCJ5.0 C A - SMCJ170(C)A SMCJ5.0(C)A - SMCJ170(C)A Features • • • • • • • Glass passivated junction. 1500 W Peak Pulse Power capability on 10/1000 µs waveform. Excellent clamping capability. Low incremental surge resistance. Fast response time; typically less

GFK 77

Abstract: FAIRCHILD Transient Voltage Suppressors GFp 85 Diode GFK diode GG 14 diode GG 26 diode GG 64 GFX 6 GFX diode J100
Contextual Info: SMCJ5V0 C A - SMCJ170(C)A Transient Voltage Suppressors SMCJ5V0(C)A - SMCJ170(C)A Features • • • • • • • Glass passivated junction. 1500 W Peak Pulse Power capability on 10/1000 µs waveform. Excellent clamping capability. Low incremental surge resistance.

ghg 747

Abstract: fairchild gez BEM 45 marking code BFK SMCJ33 BFK 67 gex smc gfm 58 GFX 6 marking ghm
Contextual Info: Features • • • • • • 0.280 7.112 0.260 (6.604) Glass passivated junction. 1500 W Peak Pulse Power capability on 10/1000 µs waveform. Excellent clamping capability. Low incremental surge resistance. Fast response time; typically less than 1.0 ps from 0 volts to BV for

Bex c 209

Abstract: BEM 45 ggr 86 bgt 618 BFK 67 gex smc marking ghm transistor bfx 73 SMCJ10 SMCJ11
Contextual Info: Features • • • • • • 0.280 7.112 0.260 (6.604) Glass passivated junction. 1500 W Peak Pulse Power capability on 10/1000 µs waveform. Excellent clamping capability. Low incremental surge resistance. Fast response time; typically less than 1.0 ps from 0 volts to BV for

Contextual Info: SMCJ5.0 C A - SMCJ170(C)A SMCJ5.0(C)A - SMCJ170(C)A Features • • • • • • • Glass passivated junction. 1500 W Peak Pulse Power capability on 10/1000 µs waveform. Excellent clamping capability. Low incremental surge resistance. Fast response time; typically less

FAIRCHILD GGV

Abstract: GFM 74 A BFR40 FAIRCHILD GHM GHM FAIRCHILD GFz 51 GFX 74 a BFK 78 SMCJ12 SMCJ13
Contextual Info: SMCJ5.0 C A F A IR C H IL D s e m ic o n d u c t o r - SMCJ170(C)A SMCJ5.0(C)A - SMCJ170(C)A Features • Glass passivated junction. • 1500 W Peak Pulse Power capability on 10/1000 |xs waveform. • Excellent clamping capability. • Low incremental surge resistance.

J150CA

Abstract: J54CA E210467 J170CA E325243 J58CA J45CA J64CA FAIRCHILD Transient Voltage Suppressors j51ca
Contextual Info: SMCJ5V0 C A - SMCJ170(C)A Transient Voltage Suppressors SMCJ5V0(C)A - SMCJ170(C)A Features • • • • • • • Glass passivated junction. 1500 W Peak Pulse Power capability on 10/1000 µs waveform. Excellent clamping capability. Low incremental surge resistance.

J100

Abstract: J110 J120 J130 SMCJ170 E210467
Contextual Info: SMCJ5V0 C A - SMCJ170(C)A Transient Voltage Suppressors SMCJ5V0(C)A - SMCJ170(C)A Features • • • • • • • • Glass passivated junction. 1500 W Peak Pulse Power capability on 10/1000 µs waveform. Excellent clamping capability. Low incremental surge resistance.

J150

Abstract: J160 SMCJ170 J100 J110 J120 J130
Contextual Info: SMCJ5V0 C A - SMCJ170(C)A Transient Voltage Suppressors SMCJ5V0(C)A - SMCJ170(C)A Features • • • • • • • Glass passivated junction. 1500 W Peak Pulse Power capability on 10/1000 µs waveform. Excellent clamping capability. Low incremental surge resistance.

GFM 78

Abstract: BDP 281 gfk 112 737 gez on 737 gez
Contextual Info: SMCJ5.0 C A - SMCJ170(C)A 0.280 (7.112) 0.260 (6.604) Features • • • • • • 0.124 (3.150) 0.108 (2.743) Glass passivated junction. 1500 W Peak Pulse Power capability on 10/1000 ms waveform. Excellent clamping capability. Low incremental surge resistance.

LT1630

Abstract: LT1631 LT1632 LT1633 Spannungsregler ctx210605
Contextual Info: LinearTechnologyChronicle A Showcase of Linear Technology’s Focus Products June 1998 Vol. 7 No. 6 German Edition Die maximale Eingangs-Offsetspannung ist 525µV beim LT1630/LT1631 und 1,35mV beim LT1632/LT1633. Die Eingangs-Rauschspannung beträgt beim LT1630/LT1631 nur 6nV/√Hz und

information applikation

Abstract: U880D information applikation mikroelektronik Halbleiterbauelemente DDR "Mikroelektronik" Heft u880 mikroelektronik applikation VEB mikroelektronik mikroelektronik information applikation mikroelektronik DDR
Contextual Info: i« ¡ 2 Information Applikation t m f f i ^ o e l e k t s n o •/ Information Applikation n • Heft 30: HALBLEITERSPEICHER Teil 2 SRAM und DRAM v e b halbleiterw erk frankfurfc/odor KBD im veb Kombinat mikroelektronik KAMMER DER TECHNIK Bezirksverbond

Contextual Info: Eight-Bit Bidirectional I / O Ports with H andshake DISTINCTIVE CHARACTERISTICS Eight-Bit, Bidirectional I/O Port with Handshake- Separate Clock, Clock Enable and Three-State Out­ put Enable for Each Register. Separate, Edge-Sensitive Clear Control for Each

SVI 3205 B

Abstract: bc svi 3101 d VEB mikroelektronik UL224D30 UA8560D u82720 U82720DC04 U214D20 SVI 3101 b U214D30
Contextual Info: DATENBUCH MIKRORECHNER­ L SCHALTKREISE Ä BIBLIOTHEK Manfred Kramer/ Steffen Würtenberger Manfred Kramer Steffen Würtenberger \ Datenbuch Mikrorechnerschaltkreise # i Militärverlag der Deutschen Demokratischen Republik Kramer, M.; Würtenberger, S.: D atenbuch Mikrorechnerschaltkreise. 1. Auflage, - Berlin:

information applikation

Abstract: Halbleiterbauelemente DDR U555C information applikation mikroelektronik VEB mikroelektronik "Mikroelektronik" Heft mikroelektronik DDR mikroelektronik Heft mikroelektronik applikation Transistoren DDR
Contextual Info: in n ilk a n í o J B lB t a L J I , L J n Í lH KáD Information Applikation Halbleiter Speicher Teil 1 SRAM [ n n ilk r a ^ e lE s k t s n a r iik Information Applikation HEFT 79- , HALBLEITERSPEiCHER TEIL li > < .1* • • r* - . SRAM * VEB Halbleiterwerk Frankfurt Oder

VEB mikroelektronik

Abstract: mikroelektronik DDR aktive elektronische bauelemente ddr TESLA Tesla katalog 74c915 V4093D 4502c mosfet 4040BC K561TM2
Contextual Info: DATEN DIGITALER INTEGRIERTER SCHALTKREISE AMATEUR BIBLIOTHEK Klaus K.Streng Streng, Klaus K.: Daten digitaler integrierter Schaltkreise CMOS-Schaltkreise . Berlin: Militirverlag der DDR. 1987. - 192 S.: 314 Bilder (Amateurbibliothek) ISBN 3-327-00360-2 l. Auflage, 1987

maa 502

Abstract: Tesla katalog MAA723 Halbleiterbauelemente DDR TAA 141 TESLA KF520 transistor vergleichsliste maa 503 Maa 325
Contextual Info: Klaus K. Streng Analoge Integrierte Schaltungen von T E SL A electrónica • Band 142 Klaus K. Streng Analoge Integrierte Schaltungen von TESLA MILITÄRVERLAG DER DEUTSCHEN DEMOKRATISCHEN REPUBLIK 1. Auflage, 1976, 1/— 15. Tausend M ilitärverlag der Deutschen Dem okratischen Republik

JRC 45600

Abstract: YD 803 SGS 45600 JRC TDA 7277 TDA 5072 krp power source sps 6360 2904 JRC Sony SHA T90 SA philips HFE 4541
Contextual Info: I SEMICON INDEXES Contents and Introduction Manufacturers' Information V O LU M E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 15th EDITION 1997 Numerical Listing of Integrated Circuits Substitution Guide U D C 621.382.3 Diagram s THE S E M IC O N INTERNATIONAL INDEXES

B084D

Abstract: DL074D 74LS74N transistor vergleichsliste TRANSISTOR 132D VEB mikroelektronik schlenzig B4761D B761D B176D
Contextual Info: Neue Halbleiterbauelemente KLAUS SCHLENZIG/ DIETER JUNG Operations­ verstärker LowPower- SchottkyReihe KLAUS SCHLENZIG/DIETER JUNG Neue Halbleiter­ bauelemente Operationsverstärker und Low-Power-Schottky-Reihe Militärverlag der D eutschen Demokratischen