FAIRCHILD INDUCTION HEATER Search Results

induction cooker circuit diagram

Abstract: induction cooker component list on pcb Quasi-resonant Converter for induction cooker Converter for Induction Heating control circuit of induction cooker diagram rice cooker diagram induction cooker induction heating control circuit diagram induction cooker free circuit diagram induction cooker coil design
Contextual Info: July, 2000 AN9012 Induction Heating System Topology Review Discrete Application Power Device Division Fairchild Semiconductor 1. Introduction All IH induction heating applied systems are developed using electromagnetic induction which was first discovered by Michael Faraday in 1831. Electromagnetic induction refers to the phenomenon by which electric current is generated in a closed circuit by the fluctuation of current in

SGL40N150

Contextual Info: SGL40N150 General Description Features Fairchild’s Insulated Gate Bipolar Transistor IGBT provides low conduction and switching losses. The SGL40N150 is designed for induction heating applications. • High speed switching • Low saturation voltage : VCE(sat) = 3.7 V @ IC = 40A

SGL40N150

Abstract: igbt 40a 600v
Contextual Info: SGL40N150 General Description Features Fairchild’s Insulated Gate Bipolar Transistor IGBT provides low conduction and switching losses. The SGL40N150 is designed for induction heating applications. • High speed switching • Low saturation voltage : VCE(sat) = 3.7 V @ IC = 40A

Contextual Info: SGL40N150D General Description Features Fairchild’s Insulated Gate Bipolar Transistor IGBT provides low conduction and switching losses. The SGL40N150D is designed for induction heating applications. • • • • High speed switching Low saturation voltage : VCE(sat) = 3.7 V @ IC = 40A

FGL40N150D

Contextual Info: FGL40N150D General Description Features Fairchild’s Insulated Gate Bipolar Transistor IGBT provides low conduction and switching losses. The FGL40N150D is designed for induction heating applications. • • • • High speed switching Low saturation voltage : VCE(sat) = 3.5 V @ IC = 40A

SGL40N150D

Contextual Info: SGL40N150D General Description Features Fairchild’s Insulated Gate Bipolar Transistor IGBT provides low conduction and switching losses. The SGL40N150D is designed for induction heating applications. • • • • High speed switching Low saturation voltage : VCE(sat) = 3.7 V @ IC = 40A

SGL40N150

Contextual Info: IGBT SGL40N150 General Description Features Fairchild’s Insulated Gate Bipolar Transistor IGBT provides low conduction and switching losses. SGL40N150 is designed for the Induction Heating applications. • High Speed Switching • Low Saturation Voltage : VCE(sat) = 3.7 V @ IC = 40A

FGL40N150DTU

Contextual Info: FGL40N150D General Description Features Fairchild’s Insulated Gate Bipolar Transistor IGBT provides low conduction and switching losses. The FGL40N150D is designed for induction heating applications. • • • • High speed switching Low saturation voltage : VCE(sat) = 3.5 V @ IC = 40A

IGBT 60A 1700v

Abstract: FGL60N170D FGL60N170DTU transistor fgl60n170d
Contextual Info: IGBT FGL60N170D General Description Features Fairchild’s Insulated Gate Bipolar Transistor IGBT provides low conduction and switching losses. FGL60N170D is designed for the Induction Heating applications. • • • • High Speed Switching Low Saturation Voltage : VCE(sat) = 5.0 V @ IC = 60A

induction heater

Abstract: igbt 40A 600V SGL40N150D IGBT 600V 16
Contextual Info: IGBT SGL40N150D General Description Features Fairchild’s Insulated Gate Bipolar Transistor IGBT provides low conduction and switching losses. SGL40N150D is designed for the Induction Heating applications. • • • • High Speed Switching Low Saturation Voltage : VCE(sat) = 3.7 V @ IC = 40A

induction heater

Abstract: transistor fgl60n170d FGL60N170D
Contextual Info: IGBT FGL60N170D General Description Features Fairchild’s Insulated Gate Bipolar Transistor IGBT provides low conduction and switching losses. FGL60N170D is designed for the Induction Heating applications. • • • • High Speed Switching Low Saturation Voltage : VCE(sat) = 5.0 V @ IC = 60A

induction heater

Abstract: FGL40N150D induction heater for heating
Contextual Info: IGBT FGL40N150D General Description Features Fairchild’s Insulated Gate Bipolar Transistor IGBT provides low conduction and switching losses. FGL40N150D is designed for the Induction Heating applications. • • • • High Speed Switching Low Saturation Voltage : VCE(sat) = 3.5 V @ IC = 40A

FGL60N170D

Contextual Info: IGBT FGL60N170D General Description Features Fairchild’s Insulated Gate Bipolar Transistor IGBT provides low conduction and switching losses. FGL60N170D is designed for the Induction Heating applications. • • • • High Speed Switching Low Saturation Voltage : VCE(sat) = 5.0 V @ IC = 60A

induction heating ic

Abstract: SGL60N90DG3YD induction heating saturation
Contextual Info: SGL60N90DG3 General Description Features Insulated Gate Bipolar Transistors IGBTs with a trench gate structure provide superior conduction and switching performance in comparison with transistors having a planar gate structure. They also have wide noise immunity. These

"induction cooker" circuit

Abstract: induction cooker application notes FGL60N100BNTD fairchild induction cooker induction cooker circuit with IGBT IGBT FGL60N100BNTD igbt induction cooker induction cooker circuit induction heating cooker induction cooker use on component
Contextual Info: FGL60N100BNTD NPT-Trench IGBT General Description Features Trench insulated gate bipolar transistors IGBTs with NPT technology show outstanding performance in conduction and switching characteristics as well as enhanced avalanche ruggedness. These devices are well suited for

igbt induction cooker

Abstract: FGA50N100 "induction cooker" circuit induction cooker circuit with IGBT induction heating cooker IC for induction cooker FGA50N100BNTDTU IGBT 600V 30A TO-3P IGBT 1000V 60A BNTD
Contextual Info: FGA50N100BNTD 1000V, 50A NPT-Trench IGBT CO-PAK General Description Features Trench insulated gate bipolar transistors IGBTs with NPT technology show outstanding performance in conduction and switching characteristics as well as enhanced avalanche ruggedness. These devices are well suited for

SGF15N90D

Contextual Info: SGF15N90D General Description Features Insulated Gate Bipolar Transistors IGBTs with a trench gate structure provide superior conduction and switching performance in comparison with transistors having a planar gate structure. They also have wide noise immunity. These

SGL60N98D

Contextual Info: SGL60N98D IGBT CO-PAK FEATURES TO-264 * High Speed Switching * Low Saturation Voltage : VCE sat = 2.7 V (at lc=60A) * High Input Impedance 1 APPLICATIONS * Home Appliance - Induction Heater -IH JAR - Micro Wave Oven ABSOLUTE MAXIMUM RATINGS Symbol Characteristics

fairchild induction heater

Abstract: SGL60N90DG3
Contextual Info: SGL60N90DG3 General Description Features Insulated Gate Bipolar Transistors IGBTs with a trench gate structure provide superior conduction and switching performance in comparison with transistors having a planar gate structure. They also have wide noise immunity. These

Contextual Info: SGL40N150 N- CHANNEL IGBT FEATURES TO-264 * High Speed Switching * Low Saturation Voltage : VCE sat = 3.7 V typ. (at IC=40A) * High Input Impedance 1 APPLICATIONS C * Home Appliance - Induction Heater - IH JAR - Micro Wave Oven G E ABSOLUTE MAXIMUM RATINGS

Contextual Info: SGL60N90D IGBT CO-PAK FEATURES TO-264 * High Speed Switching * Low Saturation Voltage : VCE sat = 2.7 V (at lc=60A) * High Input Impedance 1 APPLICATIONS * Home Appliance - Induction Heater -IH JAR - Micro Wave Oven ABSOLUTE MAXIMUM RATINGS Symbol Characteristics

fairchild induction heater

Abstract: SGL60N90DG3 n-channel, 75v, 80a n-channel, 75v, 60a 12v dc to 8.5v dc 60A 150V IGBT
Contextual Info: SGL60N90DG3 N-CHANNEL IGBT FEATURES TO-264 * High Speed Switching * Low Saturation Voltage : VCE sat = 2.0 V (at IC=60A) * High Input Impedance * Built in Fast Recovery Diode 1 C APPLICATIONS * Home Appliance - Induction Heater - IH JAR - Micro Wave Oven

vf17

Contextual Info: SGL40N150D CO-PAK IGBT FEATURES TO-264 * High Speed Switching * Low Saturation Voltage : VCE sat = 3.7 V typ. at IC=40A * High Input Impedance * Built in Fast Recovery Diode :VF=1.7 at IF=10A, trr=170ns 1 C APPLICATIONS G * Home Appliance - Induction Heater

Contextual Info: SGL60N90DG3 N-CHANNEL IGBT FEATURES TO-264 * High Speed Switching * Low Saturation Voltage : VCE sat = 2.0 V (at lc=60A) * High Input Impedance * Built in Fast Recovery Diode 1 APPLICATIONS * Home Appliance - Induction Heater -IH JAR - Micro Wave Oven ABSOLUTE