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    FAIRCHILD PLANAR TRANSISTORS Search Results

    FAIRCHILD PLANAR TRANSISTORS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097
    		Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TPCP8515
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8 Visit Toshiba Electronic Devices & Storage Corporation
    TTC021
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    FAIRCHILD PLANAR TRANSISTORS Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    mA759

    Abstract: ua759hc MA759C MA759HC MA77000U1C ua759 A759 UA759 equivalent MA759U1C UA759HM
    Contextual Info: juA759 • juA77000 Power Operational Amplifiers FAIRCHILD A Schlumberger Company _U neai_D ivisjon_O gerational_A m plifie^ Description Connection Diagram 8-Lead Metal Package Top View The mA759 and |uA77000 are high performance monolithic operational amplifiers constructed using the Fairchild Planar


    OCR Scan     		MA759 juA77000 ixA759 jiA77000 mA759 /jA77000 jiA741. /uA759 /uA77000 ua759hc MA759C MA759HC MA77000U1C ua759 A759 UA759 equivalent MA759U1C UA759HM PDF

    Contextual Info: MA105QB Voltage Regulator FAIRCHILD A Schlumberger Company MIL-STD-883 November 1985 - Rev 05 Aerospace and Defense Data Sheet Linear Products Description Connection Diagram 8-Lead Can Top View The |uA 105QB is a monolithic positive voltage regulator constructed using the Fairchild Planar Epitaxial process.


    OCR Scan     		MIL-STD-883 MA105QB 105QB Regulation910 Voltage11 juA105QB PDF

    diode sd pd

    Contextual Info: FQD4P25TM_WS / FQU4P25 October 27, 2011 FQD4P25TM_WS / FQU4P25 250V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		FQD4P25TM FQU4P25 -250V, diode sd pd PDF

    FQB2NA90

    Abstract: FQI2NA90
    Contextual Info: FQB2NA90 / FQI2NA90 September 2000 QFET TM FQB2NA90 / FQI2NA90 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		FQB2NA90 FQI2NA90 FQI2NA90 PDF

    Contextual Info: FQB2NA90 / FQI2NA90 September 2000 QFET TM FQB2NA90 / FQI2NA90 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		FQB2NA90 FQI2NA90 FQB2NA90TM O-263 PDF

    Contextual Info: FQB2NA90 / FQI2NA90 September 2000 QFET TM FQB2NA90 / FQI2NA90 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		FQB2NA90 FQI2NA90 FQI2NA90TU O-262 FQI2NA90 PDF

    2005Z

    Abstract: IRF840B IRF series 2005 Z IRFS840B
    Contextual Info: IRF840B/IRFS840B 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to


    Original     		IRF840B/IRFS840B 2005Z IRF840B IRF series 2005 Z IRFS840B PDF

    SSM1N45B

    Contextual Info: SSM1N45B SSM1N45B 450V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to


    Original     		SSM1N45B SSM1N45B PDF

    dc motor forward reverse control

    Abstract: 125 diode IRF P CHANNEL MOSFET IRF P CHANNEL MOSFET 100v N-Channel 40V MOSFET N-Channel MOSFET 200v IRF610B IRFS610B MOSFET 150 N IRF
    Contextual Info: IRF610B/IRFS610B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to


    Original     		IRF610B/IRFS610B dc motor forward reverse control 125 diode IRF P CHANNEL MOSFET IRF P CHANNEL MOSFET 100v N-Channel 40V MOSFET N-Channel MOSFET 200v IRF610B IRFS610B MOSFET 150 N IRF PDF

    Contextual Info: IRFR420B / IRFU420B 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to


    Original     		IRFR420B IRFU420B PDF

    Contextual Info: SSR1N60B / SSU1N60B 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to


    Original     		SSR1N60B SSU1N60B PDF

    Contextual Info: IRFW830B / IRFI830B 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to


    Original     		IRFW830B IRFI830B PDF

    W640B

    Abstract: IRF Power MOSFET code marking
    Contextual Info: IRFW640B / IRFI640B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to


    Original     		IRFW640B IRFI640B O-263 W640B IRFW640BTM FP001 W640B IRF Power MOSFET code marking PDF

    irf 111

    Contextual Info: IRF624B/IRFS624B 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to


    Original     		IRF624B/IRFS624B O-220 IRF624B FP001 irf 111 PDF

    IRFR220BTM

    Contextual Info: IRFR220B / IRFU220B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to


    Original     		IRFR220B IRFU220B IRFR220BTM FP001 O-252 IRFR220BTF FP001 PDF

    Contextual Info: FQB10N20L / FQI10N20L May 2000 QFET TM FQB10N20L / FQI10N20L 200V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		FQB10N20L FQI10N20L PDF

    SSS7N60B

    Abstract: Power MOSFET SSP7n60b SSP7N60B
    Contextual Info: SSP7N60B/SSS7N60B 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to


    Original     		SSP7N60B/SSS7N60B O-220 O-220F SSS7N60B Power MOSFET SSP7n60b SSP7N60B PDF

    IRFR224A

    Contextual Info: IRFR224B / IRFU224B 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to


    Original     		IRFR224B IRFU224B IRFR224BTM FP001 O-252 IRFR224BTF FP001 IRFR224A PDF

    irf830b

    Contextual Info: IRF830B/IRFS830B 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to


    Original     		IRF830B/IRFS830B Improved00% IRFS830B IRFS830 IRFS830A IRFS830BT O-220F O-220F irf830b PDF

    Contextual Info: SSR1N60B / SSU1N60B 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to


    Original     		SSR1N60B SSU1N60B SSP1N60A SSR1N60BTM SSR1N60BTF O-252 PDF

    Contextual Info: FQD13N10L / FQU13N10L August 2000 QFET TM FQD13N10L / FQU13N10L 100V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		FQD13N10L FQU13N10L PDF

    Contextual Info: FQD9N08L / FQU9N08L June 2000 QFET TM FQD9N08L / FQU9N08L 80V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		FQD9N08L FQU9N08L PDF

    SSR2N60A

    Contextual Info: SSR2N60B / SSU2N60B 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to


    Original     		SSR2N60B SSU2N60B SSR2N60A SSR2N60BTM SSR2N60BTF O-252 SSR2N60A PDF

    Contextual Info: FQB9N08L / FQI9N08L June 2000 QFET TM FQB9N08L / FQI9N08L 80V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		FQB9N08L FQI9N08L FQB9N08LTM O-263 PDF