FAIRCHILD POWER TRENCH MOSFET FDD Search Results

10.7A

Abstract: FDD5353
Contextual Info: FDD5353 tm N-Channel Power Trench MOSFET 60V, 50A, 12.3mΩ Features General Description „ Max rDS on = 12.3mΩ at VGS = 10V, ID = 10.7A „ 100% UIL Tested This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has

10.7A

Contextual Info: FDD5353 N-Channel Power Trench MOSFET 60V, 50A, 12.3mΩ Features General Description „ Max rDS on = 12.3mΩ at VGS = 10V, ID = 10.7A „ 100% UIL Tested This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has

Contextual Info: FDD5353 tm Trench N-Channel Power MOSFET 60V, 50A, 12.3mΩ Features General Description ̈ Max rDS on = 12.3mΩ at VGS = 10V, ID = 10.7A ̈ 100% UIL Tested This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has

FDD86

Abstract: FDD86110
Contextual Info: FDD86110 N-Channel PowerTrench MOSFET 100 V, 50 A, 10.2 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and

fairchild 741

Abstract: FDD86252 FDD86
Contextual Info: FDD86252 N-Channel PowerTrench MOSFET 150 V, 27 A, 52 m: Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and

FDD86102

Abstract: FDD86
Contextual Info: FDD86102 N-Channel PowerTrench MOSFET 100 V, 36 A, 24 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS on , switching performance and ruggedness.

Contextual Info: FDD86252 N-Channel PowerTrench MOSFET 150 V, 27 A, 52 m: Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and

Contextual Info: FDD86252 N-Channel PowerTrench MOSFET 150 V, 27 A, 52 m: Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and

FDD86110

Contextual Info: FDD86110 N-Channel PowerTrench MOSFET 100 V, 50 A, 10.2 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and

FDD86110

Contextual Info: FDD86110 N-Channel PowerTrench MOSFET 100 V, 50 A, 10.2 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and

fdd86250

Abstract: FDD86
Contextual Info: FDD86250 N-Channel PowerTrench MOSFET 150 V, 50 A, 22 mΩ Features General Description „ 100% UIL tested This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and

Contextual Info: FDD86250 N-Channel PowerTrench MOSFET 150 V, 50 A, 22 mΩ Features General Description ̈ 100% UIL tested This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and

Contextual Info: FDD3860 tm N-Channel PowerTrench MOSFET 100V, 29A, 36mΩ Features General Description ̈ Max rDS on = 36mΩ at VGS = 10V, ID = 5.9A ̈ 100% UIL tested This N-Channel MOSFET is rugged gate version of Fairchild Semiconductor‘s advanced Power Trench® process. This part is

FDD3860

Abstract: 125C51
Contextual Info: FDD3860 tm N-Channel PowerTrench MOSFET 100V, 29A, 36mΩ Features General Description „ Max rDS on = 36mΩ at VGS = 10V, ID = 5.9A „ 100% UIL tested This N-Channel MOSFET is rugged gate version of Fairchild Semiconductor‘s advanced Power Trench® process. This part is

Contextual Info: FDD8453LZ_F085 N-Channel Power Trench MOSFET 40V, 50A, 6.5mΩ Features ̈ Typ rDS on = 5mΩ at VGS = 10V, ID = 15A General Description ̈ Typ rDS(on) = 6mΩ at VGS = 4.5V, ID = 13A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that

Contextual Info: FDD8453LZ_F085 N-Channel Power Trench MOSFET 40V, 50A, 6.5mΩ Features „ Typ rDS on = 5mΩ at VGS = 10V, ID = 15A General Description „ Typ rDS(on) = 6mΩ at VGS = 4.5V, ID = 13A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that

fdd86102

Contextual Info: FDD86102 N-Channel PowerTrench MOSFET 100 V, 36 A, 24 m: Features General Description „ Max rDS on = 24 m: at VGS = 10 V, ID = 8 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and

Contextual Info: FDD86102 N-Channel PowerTrench MOSFET 100 V, 36 A, 24 mΩ Features General Description ̈ Max rDS on = 24 mΩ at VGS = 10 V, ID = 8 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and

Contextual Info: FDD86113LZ N-Channel PowerTrench MOSFET 100 V, 5.5 A, 104 mΩ Features General Description ̈ Max rDS on = 104 mΩ at VGS = 10 V, ID = 4.2 A This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process

FDD86326

Abstract: FDD86
Contextual Info: FDD86326 N-Channel PowerTrench MOSFET 80 V, 37 A, 23 m: Features „ Max rDS on = 23 m: at VGS = 10 V, ID = 8 A General Description „ Max rDS(on) = 37 m: at VGS = 6 V, ID = 4.6 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has

FDD86

Contextual Info: FDD86113LZ N-Channel PowerTrench MOSFET 100 V, 5.5 A, 104 mΩ Features General Description „ Max rDS on = 104 mΩ at VGS = 10 V, ID = 4.2 A This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process

Contextual Info: FDD86326 N-Channel PowerTrench MOSFET 80 V, 37 A, 23 m: Features „ Max rDS on = 23 m: at VGS = 10 V, ID = 8 A General Description „ Max rDS(on) = 37 m: at VGS = 6 V, ID = 4.6 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has

fdd86102

Abstract: OC204
Contextual Info: FDD86102 N-Channel PowerTrench MOSFET 100 V, 36 A, 24 mΩ Features „ Max rDS on = 24 mΩ at VGS = 10 V, ID = 8 A General Description „ Max rDS(on) = 38 mΩ at VGS = 6 V, ID = 6 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has

sje 2004

Abstract: sje 204 equivalent diode DA 68a TO-252AD fast reverse recovery time of LED
Contextual Info: FDD1600N10ALZD N-Channel PowerTrench Boost-FET 100V, 6.8A, 160mΩ Features Description • RDS on = 124mΩ ( Typ.)@ VGS = 10V, ID = 3.5A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance Power Trench process that has been expecially tailored to minimize the on-state resistance and yet