FAIRCHILD SWITCHING TECHNOLOGIES Search Results

smps 1000W

Abstract: the calculation of the power dissipation for the igbt and the inverse diode in circuits smps design 1000w smps 1000W fet AN-7010 FGP20N60S2D smps 1000w circuit FCP11N60 Equivalent CCM PFC inductor analysis FQA28N50F
Contextual Info: www.fairchildsemi.com AN-7010 Choosing Power Switching Devices for SMPS Designs MOSFETs or IGBTs? By Ron Randall, Staff Applications Engineer, Fairchild Semiconductor Introduction Turn-On Losses This article identifies the key parametric considerations for

AN-5014

Abstract: GTLP6C816 VME320 VME64X VME64x connector
Contextual Info: Fairchild Semiconductor Application Note July 1999 Revised February 2001 GTLP: Incident Wave Switching and Throughput Abstract The IWS/Throughput Relationship This application note demonstrates, theoretically and empirically, the relationship of the driving device and the

FDD86102

Abstract: FDD86
Contextual Info: FDD86102 N-Channel PowerTrench MOSFET 100 V, 36 A, 24 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS on , switching performance and ruggedness.

Contextual Info: FAIRCHILD S E M IC O N D U C T O R tm MBRS130L SCHOTTKY POWER RECTIFIER General Description: Schottky Barrier Diodes make use of the rectification effect of a metal to silicon barrier. They are ideally suited for high frequency rectification in switching regulators & converters.

Contextual Info: FAIRCHILD S E M IC O N D U C T O R tm MBRS320 SCHOTTKY POWER RECTIFIER General Description: Schottky Barrier Diodes make use of the rectification effect of a metal to silicon barrier. They are ideally suited for high frequency rectification in switching regulators & converters.

MBRS340

Contextual Info: MBRS340 FAIRCHILD M IC D N D U C T Q R n SCHOTTKY POW ER RECTIFIER General Description: Schottky Barrier Diodes make use of the rectification effect of a metal to silicon barrier. They are ideally suited for high frequency rectification in switching regulators & converters.

MBRS340

Contextual Info: FAIRCHILD S E M I C O N D U C T O R tm MBRS340 SCHOTTKY POWER RECTIFIER General Description: Schottky Barrier Diodes make use of the rectification effect of a metal to silicon barrier. They are ideally suited for high frequency rectification in switching regulators & converters.

fdd86102

Contextual Info: FDD86102 N-Channel PowerTrench MOSFET 100 V, 36 A, 24 m: Features General Description „ Max rDS on = 24 m: at VGS = 10 V, ID = 8 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and

FDD86102LZ

Abstract: fdd86102
Contextual Info: N-Channel PowerTrench MOSFET 100 V, 35 A, 22.5 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and switching loss. G-S zener has been added to enhance ESD

FDD86102LZ

Abstract: FDD86102
Contextual Info: N-Channel PowerTrench MOSFET 100 V, 35 A, 22.5 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and switching loss. G-S zener has been added to enhance ESD

Contextual Info: FDD86102 N-Channel PowerTrench MOSFET 100 V, 36 A, 24 mΩ Features General Description ̈ Max rDS on = 24 mΩ at VGS = 10 V, ID = 8 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and

circuit diagram of mosfet based smps power supply

Abstract: mosfet triggering circuit for inverter FDS6694 optocoupler pnp or npn phototransistor spice model computer smps circuit diagram optocoupler crossreference MOSFET cross-reference high gain low voltage NPN transistor triac spice model
Contextual Info: Analog Discrete Interface & Logic Optoelectronics The Innovations Never Stop Contents • Comprehensive New Product List · New Product Highlights · Featured Application · New at fairchildsemi.com Fairchild continues to develop new products, solutions and technologies—just

Contextual Info: 1N4154 DISCRETE POWER AND SIGNAL TECHNOLOGIES General Description: Features: The high breakdown voltage, fast switching speed and high forward conductance of this diode packaged in a DO-35 miniature Glass Axial leaded package makes it desirable also as a general purpose diode.

fdms8848

Contextual Info: FDMS8848NZ N-Channel PowerTrench MOSFET 40 V, 49 A, 3.1 m: Features General Description The FDMS8848NZ has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest

FCH22N60N

Abstract: FCH22N60 11A 650V MOSFET
Contextual Info: SupreMOSTM FCH22N60N tm N-Channel MOSFET 600V, 22A, 0.165Ω Features Description • RDS on = 0.140Ω ( Typ.)@ VGS = 10V, ID = 11A The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based technologies. By utilizing this advanced technology and precise process control, SupreMOS provides world class Rsp, superior

Contextual Info: SupreMOSTM FCH25N60N tm N-Channel MOSFET 600V, 25A, 0.125Ω Features Description • RDS on = 0.107Ω ( Typ.)@ VGS = 10V, ID = 12.5A The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based technologies. By utilizing this advanced technology and precise process control, SupreMOS provides world class Rsp, superior

FDMS8848NZ

Contextual Info: FDMS8848NZ N-Channel PowerTrench MOSFET 40 V, 49 A, 3.1 mΩ Features General Description The FDMS8848NZ has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest

FDS8882

Contextual Info: FDS8882 N-Channel PowerTrench MOSFET 30 V, 9 A, 20.0 mΩ Features General Description „ Max rDS on = 20.0 mΩ at VGS = 10 V, ID = 9 A The FDS8882 has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest

Contextual Info: FDS8882 N-Channel PowerTrench MOSFET 30 V, 9 A, 20.0 mΩ Features General Description ̈ Max rDS on = 20.0 mΩ at VGS = 10 V, ID = 9 A The FDS8882 has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest

FCD9N60

Contextual Info: SuperMOSTM FCD9N60NTM N-Channel MOSFET 600V, 9A, 0.385mΩ Features Description • RDS on = 0.330Ω ( Typ.)@ VGS = 10V, ID = 4.5A The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based technologies. By utilizing this advance technology and precie process

FCD9N60NTM

Abstract: FCD9N60N
Contextual Info: SupreMOSTM FCD9N60NTM N-Channel MOSFET 600V, 9A, 0.385mΩ Features Description • RDS on = 0.330Ω ( Typ.)@ VGS = 10V, ID = 4.5A The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based technologies. By utilizing this advance technology and precise process

FCA22N60N

Contextual Info: SupreMOSTM FCA22N60N tm N-Channel MOSFET 600V, 22A, 0.165Ω Features Description • RDS on = 0.140Ω ( Typ.)@ VGS = 10V, ID = 11A The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based technologies. By utilizing this advanced technology and precise process control, SupreMOS provides world class Rsp, superior

FCA22N60N

Contextual Info: SupreMOSTM FCA22N60N tm N-Channel MOSFET 600V, 22A, 0.165Ω Features Description • RDS on = 0.140Ω ( Typ.)@ VGS = 10V, ID = 11A The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based technologies. By utilizing this advanced technology and precise process control, SupreMOS provides world class Rsp, superior

fairchild 555

Abstract: fairchild top marking FDMS8672S
Contextual Info: FDMS8672S N-Channel PowerTrench SyncFETTM 30V, 35A, 5m: Features General Description The FDMS8672S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest