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    Contextual Info: Preliminary Technical Information IXFK520N075T2 IXFX520N075T2 TrenchT2TM GigaMOSTM HiperFETTM Power MOSFETs VDSS ID25 = = 75V 520A Ω 2.2mΩ RDS on ≤ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) Symbol Test Conditions VDSS


    Original     		IXFK520N075T2 IXFX520N075T2 O-264 520N075T2 PDF

    IXFK520N075T2

    Abstract: 7v150 IXFX520N075T2 PLUS247
    Contextual Info: Advance Technical Information IXFK520N075T2 IXFX520N075T2 TrenchT2TM GigaMOSTM HiperFETTM Power MOSFET VDSS ID25 = = 75V 520A Ω 2.2mΩ RDS on ≤ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) Symbol Test Conditions Maximum Ratings


    Original     		IXFK520N075T2 IXFX520N075T2 O-264 520N075T2 IXFK520N075T2 7v150 IXFX520N075T2 PLUS247 PDF

    Contextual Info: Advance Technical Information TrenchT2TM GigaMOSTM HiperFETTM Power MOSFET VDSS ID25 IXFK520N075T2 IXFX520N075T2 = = 75V 520A Ω 2.2mΩ RDS on ≤ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) Symbol Test Conditions Maximum Ratings


    Original     		IXFK520N075T2 IXFX520N075T2 O-264 520N075T2 PDF

    IXFK

    Abstract: IXFK250N10P IXFX250N10P PLUS247
    Contextual Info: Preliminary Technical Information IXFK250N10P IXFX250N10P PolarTM Power MOSFET HiperFETTM VDSS ID25 = = ≤ RDS on 100V 250A Ω 6.5mΩ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) (TAB) Symbol Test Conditions Maximum Ratings


    Original     		IXFK250N10P IXFX250N10P O-264 100ms 250N10P IXFK IXFK250N10P IXFX250N10P PLUS247 PDF

    ixfk44n80

    Contextual Info: Preliminary Technical Information IXFK44N80Q3 IXFX44N80Q3 HiperFETTM Power MOSFETs Q3-Class VDSS ID25 = = ≤ ≤ RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier 800V 44A Ω 190mΩ 300ns TO-264 (IXFK) Symbol Test Conditions


    Original     		O-264) O-264 PLUS247 PLUS247) IXFK44N80Q3 IXFX44N80Q3 300ns O-264 ixfk44n80 PDF

    Contextual Info: Advance Technical Information GigaMOSTM TrenchT2 HiperFETTM Power MOSFET VDSS ID25 IXFK220N17T2 IXFX220N17T2 170V 220A Ω 6.3mΩ 140ns RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) Symbol Test Conditions


    Original     		IXFK220N17T2 IXFX220N17T2 140ns O-264 220N17T2 PDF

    Contextual Info: Advance Technical Information GigaMOSTM Power MOSFET VDSS ID25 IXFK180N25T IXFX180N25T = = 250V 180A Ω 12.9mΩ 200ns RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) Symbol Test Conditions Maximum Ratings


    Original     		IXFK180N25T IXFX180N25T 200ns O-264 180N25T PDF

    Contextual Info: Preliminary Technical Information HiperFETTM Power MOSFETs Q3-Class VDSS ID25 IXFK32N100Q3 IXFX32N100Q3 = = ≤ ≤ RDS on trr 1000V 32A Ω 320mΩ 300ns N-Channel Enhancement Mode Fast Intrinsic Rectifier TO-264 (IXFK) Symbol Test Conditions Maximum Ratings


    Original     		IXFK32N100Q3 IXFX32N100Q3 300ns O-264 32N100Q3 1-11-A PDF

    IXFK240N15T2

    Abstract: IXFX240N15T2 PLUS247
    Contextual Info: Advance Technical Information IXFK240N15T2 IXFX240N15T2 GigaMOSTM TrenchT2 HiperFETTM Power MOSFET VDSS ID25 = = 150V 240A Ω 5.2mΩ 140ns RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) Symbol Test Conditions


    Original     		IXFK240N15T2 IXFX240N15T2 140ns O-264 240N15T2 IXFK240N15T2 IXFX240N15T2 PLUS247 PDF

    360N10T

    Abstract: PLUS-247 IXFK360N10T IXFX360N10T PLUS247
    Contextual Info: Advance Technical Information IXFK360N10T IXFX360N10T GigaMOSTM Trench HiperFETTM Power MOSFET VDSS ID25 = = 100V 360A Ω 2.9mΩ 130ns RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) Symbol Test Conditions


    Original     		IXFK360N10T IXFX360N10T 130ns O-264 360N10T PLUS-247 IXFK360N10T IXFX360N10T PLUS247 PDF

    Contextual Info: Advance Technical Information IXFK260N17T IXFX260N17T GigaMOSTM Power MOSFET VDSS ID25 = = 170V 260A Ω 6.5mΩ 200ns RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) Symbol Test Conditions Maximum Ratings


    Original     		IXFK260N17T IXFX260N17T 200ns O-264 -55ig. 260N17T PDF

    NF 034

    Contextual Info: Advance Technical Information GigaMOSTM TrenchT2 HiperFETTM Power MOSFET VDSS ID25 IXFK320N17T2 IXFX320N17T2 170V 320A Ω 5.2mΩ 150ns RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) Symbol Test Conditions


    Original     		IXFK320N17T2 IXFX320N17T2 150ns O-264 320N17T2 NF 034 PDF

    Contextual Info: Preliminary Technical Information IXFK32N100Q3 IXFX32N100Q3 HiperFETTM Power MOSFETs Q3-Class VDSS ID25 = = ≤ ≤ RDS on trr 1000V 32A Ω 320mΩ 300ns N-Channel Enhancement Mode Fast Intrinsic Rectifier TO-264 (IXFK) Symbol Test Conditions Maximum Ratings


    Original     		IXFK32N100Q3 IXFX32N100Q3 300ns O-264 PLUS247 32N100Q3 1-11-A PDF

    IXFX320N17T2

    Abstract: PLUS247 IXFK320N17T2
    Contextual Info: Advance Technical Information IXFK320N17T2 IXFX320N17T2 GigaMOSTM TrenchT2 HiperFETTM Power MOSFET VDSS ID25 = = 170V 320A Ω 5.2mΩ 150ns RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) Symbol Test Conditions


    Original     		IXFK320N17T2 IXFX320N17T2 150ns O-264 320N17T2 IXFX320N17T2 PLUS247 IXFK320N17T2 PDF

    IXFK220N17T2

    Abstract: IXFX220N17T2 PLUS247 DS100230
    Contextual Info: Advance Technical Information IXFK220N17T2 IXFX220N17T2 GigaMOSTM TrenchT2 HiperFETTM Power MOSFET VDSS ID25 = = 170V 220A Ω 6.3mΩ 140ns RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) Symbol Test Conditions


    Original     		IXFK220N17T2 IXFX220N17T2 140ns O-264 220N17T2 IXFK220N17T2 IXFX220N17T2 PLUS247 DS100230 PDF

    Contextual Info: Preliminary Technical Information GigaMOSTM Trench HiperFETTM Power MOSFET VDSS ID25 IXFK360N10T IXFX360N10T 100V 360A Ω 2.9mΩ 130ns RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) Symbol Test Conditions


    Original     		IXFK360N10T IXFX360N10T 130ns O-264 360N10T PDF

    Contextual Info: Advance Technical Information GigaMOSTM TrenchT2 HiperFETTM Power MOSFET VDSS ID25 IXFK360N15T2 IXFX360N15T2 150V 360A Ω 4.0mΩ 150ns RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) Symbol Test Conditions


    Original     		IXFK360N15T2 IXFX360N15T2 150ns O-264 360N15T2 PDF

    Contextual Info: Advance Technical Information GigaMOSTM TrenchT2 HiperFETTM Power MOSFET VDSS ID25 IXFK240N15T2 IXFX240N15T2 150V 240A Ω 5.2mΩ 140ns RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) Symbol Test Conditions


    Original     		IXFK240N15T2 IXFX240N15T2 140ns O-264 240N15T2 PDF

    Contextual Info: Preliminary Technical Information IXFK360N10T IXFX360N10T GigaMOSTM Trench HiperFETTM Power MOSFET VDSS ID25 = = 100V 360A Ω 2.9mΩ 130ns RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) Symbol Test Conditions


    Original     		IXFK360N10T IXFX360N10T O-264 130ns 360N10T PDF

    ixfx420n10t

    Abstract: IXFK420N10T MOSFET 60V 210A PLUS247
    Contextual Info: Advance Technical Information IXFK420N10T IXFX420N10T GigaMOSTM Trench HiperFETTM Power MOSFET VDSS ID25 = = 100V 420A Ω 2.6mΩ 140ns RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) Symbol Test Conditions


    Original     		IXFK420N10T IXFX420N10T 140ns O-264 420N10T ixfx420n10t IXFK420N10T MOSFET 60V 210A PLUS247 PDF

    IXFK230N20T

    Abstract: IXFX230N20T PLUS247 ixfk23 230N20T
    Contextual Info: Advance Technical Information IXFK230N20T IXFX230N20T GigaMOSTM Power MOSFET VDSS ID25 = = 200V 230A Ω 7.5mΩ 200ns RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) Symbol Test Conditions Maximum Ratings


    Original     		IXFK230N20T IXFX230N20T 200ns O-264 230N20T IXFK230N20T IXFX230N20T PLUS247 ixfk23 PDF

    Contextual Info: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM IXFK20N120P IXFX20N120P VDSS ID25 = 1200V = 20A Ω ≤ 570mΩ ≤ 300ns RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode trr TO-264 (IXFK) Symbol Test Conditions Maximum Ratings


    Original     		IXFK20N120P IXFX20N120P 300ns O-264 PLUS247 20N120P PDF

    Contextual Info: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM IXFK30N110P IXFX30N110P VDSS ID25 = = 1100V 30A Ω 360mΩ 300ns RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) Symbol Test Conditions Maximum Ratings


    Original     		IXFK30N110P IXFX30N110P 300ns O-264 30N110P PDF

    IXFK160N30T

    Contextual Info: Advance Technical Information GigaMOSTM Power MOSFET VDSS ID25 IXFK160N30T IXFX160N30T = = 300V 160A Ω 19mΩ 200ns RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) Symbol Test Conditions Maximum Ratings VDSS


    Original     		IXFK160N30T IXFX160N30T 200ns O-264 160N30T IXFK160N30T PDF