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    FAST RECOVERY DIODE 1500V Search Results

    FAST RECOVERY DIODE 1500V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CEZ6V8
    		Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.8 V, ESC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ8V2
    		Toshiba Electronic Devices & Storage Corporation Zener Diode, 8.2 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V
    		Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6
    		Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation
    CEZ6V2
    		Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.2 V, ESC Visit Toshiba Electronic Devices & Storage Corporation

    FAST RECOVERY DIODE 1500V Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    strobo

    Contextual Info: TFR7H TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE TFR7H Unit: mm STROBO FLASHER APPLICATIONS FAST RECOVERY Average Forward Current : IF (AV) = 0.2A Reverse Voltage (DC) : VRM = 500V Repetitive Peak Reverse Surge Voltage : VRRSM = 1500V Reverse Recovery Time


    Original     		PDF

    fr3t

    Abstract: fr3n NL 006 toshiba diode 1A marking code toshiba toshiba marking code diode fr3n
    Contextual Info: TOSHIBA TFR3N,TFR3T TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE TFR3N, TFR3T a STROBO FLASHER APPLICATIONS FAST RECOVERY • • • Average Forward Current : Ip (AV) —0.2A Repetitive Peak Reverse Voltage : V rrm = 1000, 1500V Reverse Recovery Time


    OCR Scan     		961001EAA2' fr3t fr3n NL 006 toshiba diode 1A marking code toshiba toshiba marking code diode fr3n PDF

    Contextual Info: TFR7H TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE TFR7H Unit: mm STROBO FLASHER APPLICATIONS FAST RECOVERY l Average Forward Current : IF (AV) = 0.2A l Reverse Voltage (DC) : VRM = 500V l Repetitive Peak Reverse Surge Voltage : VRRSM = 1500V l Reverse Recovery Time


    Original     		PDF

    fr1n

    Contextual Info: TOSHIBA TFR1N,TFR1T TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE TFR1N, TFR1T Unit in mm STROBO FLASHER APPLICATIONS. FAST RECOVERY • Average Forward Current : If (a V) = 0.5A • Repetitive Peak Reverse Voltage : V rrm = 1000, 1500V • Reverse Recovery Time


    OCR Scan     		961001EAA2' fr1n PDF

    Contextual Info: TOSHIBA TFR4N,TFR4T TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE TFR4N, TFR4T Unit in mm STROBO FLASHER APPLICATIONS. FAST RECOVERY • Average Forward Current : Ip (AV) —0.3A • Repetitive Peak Reverse Voltage : V rrm = 1000, 1500V • Reverse Recovery Time


    OCR Scan     		26MIN. 961001EAA2' PDF

    marking code toshiba

    Abstract: toshiba control code toshiba marking code diode strobo led
    Contextual Info: TFR7H TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE TFR7H STROBO FLASHER APPLICATIONS FAST RECOVERY Unit: mm Average Forward Current: IF (AV) = 0.2A Reverse Voltage (DC): VRM = 500V Repetitive Peak Reverse Surge Voltage: VRRSM = 1500V Reverse Recovery Time: trr = 10µs


    Original     		13oducts marking code toshiba toshiba control code toshiba marking code diode strobo led PDF

    marking WMM

    Abstract: 3-3F2A toshiba month code fast recovery diode 1500V
    Contextual Info: TOSHIBA TFR7H TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE TFR7H STROBO FLASHER APPLICATIONS FAST RECOVERY Average Forward Current : I f ( A V ) =0.2A Reverse Voltage (DC) : V = 500V Repetitive Peak Reverse Surge Voltage : V rrsm = 1500V Reverse Recovery Time : trr= 10/^s


    OCR Scan     		RECTAN-360Â marking WMM 3-3F2A toshiba month code fast recovery diode 1500V PDF

    fr2t diode

    Abstract: fr2N fr2t
    Contextual Info: TOSHIBA TFR2N,TFR2T TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE TFR2N, TFR2T Unit in mm STROBO FLASHER APPLICATIONS. FAST RECOVERY • • • Average Forward Current Repetitive Peak Reverse Voltage Reverse Recovery Time l F (A V ) = 0-5A Vrrm = 1000, 1500V


    OCR Scan     		961001EAA2' fr2t diode fr2N fr2t PDF

    marking WMM

    Contextual Info: TO SH IBA TFR7H TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE TFR7H STROBO FLASHER APPLICATIONS FAST RECOVERY Average Forward Current : Ip1(AV) —0.2A Reverse Voltage (DC) : V r m = 500V Repetitive Peak Reverse Surge Voltage : V r r s m = 1500V Reverse Recovery Time


    OCR Scan     		000707EAA2' marking WMM PDF

    Contextual Info: TFR7H TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE TFR7H STROBO FLASHER APPLICATIONS FAST RECOVERY Unit: mm z Average Forward Current: IF (AV) = 0.2A z Reverse Voltage (DC): VRM = 500V z Repetitive Peak Reverse Surge Voltage: VRRSM = 1500V z Reverse Recovery Time: trr = 10 s


    Original     		PDF

    fr2t diode

    Abstract: VRRM1000 toshiba diode do-41
    Contextual Info: TO SH IBA TFR2N,TFR2T TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE TFR2N, TFR2T Unit in mm STROBO FLASHER APPLICATIONS. FAST RECOVERY • • • Average Forward Current Repetitive Peak Reverse Voltage Reverse Recovery Time (AV) = 0-5A V r r m = 1000, 1500V


    OCR Scan     		DO-41 000707EAA2' fr2t diode VRRM1000 toshiba diode do-41 PDF

    Contextual Info: TFR7H TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE TFR7H STROBO FLASHER APPLICATIONS FAST RECOVERY Unit: mm z Average Forward Current: IF (AV) = 0.2A z Reverse Voltage (DC): VRM = 500V z Repetitive Peak Reverse Surge Voltage: VRRSM = 1500V z Reverse Recovery Time: trr = 10µs


    Original     		PDF

    FR3N

    Contextual Info: TFR3NJFR3T T O SH IB A TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE TFR3N TFR3T Unit in mm STROBO FLASHER APPLICATIONS FAST RECOVERY • • • «B- Average Forward Current : Ijf (AV) —0.2A Repetitive Peak Reverse Voltage : V rrjv[=1000, 1500V Reverse Recovery Time


    OCR Scan     		961001EAA2' FR3N PDF

    Contextual Info: T O SH IB A TFR4N,TFR4T TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE TFR4N, TFR4T STROBO FLASHER APPLICATIONS. FAST RECOVERY Unit in mm • Average Forward Current : Ijr (AV) = 0.3A • Repetitive Peak Reverse Voltage : Vr rm = 1000, 1500V • Reverse Recovery Time


    OCR Scan     		PDF

    fr2t diode

    Abstract: fr2n
    Contextual Info: TFR2NJFR2T T O SH IB A TOSHIBA FAST RECOVERY DIODE TFR7N SILICON DIFFUSED TYPE T FR 7 T Unit in mm STROBO FLASHER APPLICATIONS. FAST RECOVERY • • • Average Forward Current Repetitive Peak Reverse Voltage Reverse Recovery Time : l F (AV) = °-5A : VrRM~1000, 1500V


    OCR Scan     		961001EAA2' fr2t diode fr2n PDF

    Contextual Info: T O S H IB A TFR1 N,TFR1T TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE TFR1N, TFR1T STROBO FLASHER APPLICATIONS. FAST RECOVERY • • • Unit in mm Average Forward Current : Ijr (AV) = 0.5A Repetitive Peak Reverse Voltage : Vr rm = 1000, 1500V Reverse Recovery Time


    OCR Scan     		PDF

    toshiba marking code diode

    Contextual Info: T O SH IB A TFR4N,TFR4T TOSHIBA FAST RECOVERY DIODE TFRAN SILICON DIFFUSED TYPE TFRdT Unit in mm STROBO FLASHER APPLICATIONS. FAST RECOVERY • • • Average Forward Current : I f (AV)~0.3A Repetitive Peak Reverse Voltage : V r r ]v[= 1000, 1500V Reverse Recovery Time


    OCR Scan     		961001EAA2' toshiba marking code diode PDF

    TOSHIBA 1N DIODE

    Abstract: TFR1
    Contextual Info: T O SH IB A TFR1NJFR1T TOSHIBA FAST RECOVERY DIODE TFR 1N SILICON DIFFUSED TYPE TFR1T Unit in mm STROBO FLASHER APPLICATIONS. FAST RECOVERY • Average Forward C urrent : I f (AV)~0.5A • • Repetitive Peak Reverse Voltage : V r r ]v[= 1000, 1500V Reverse Recovery Time


    OCR Scan     		961001EAA2' TOSHIBA 1N DIODE TFR1 PDF

    Contextual Info: Bulletin I2094 rev. B 10/06 SD233N/R SERIES FAST RECOVERY DIODES Stud Version Features 235A High power FAST recovery diode series 4.5 µs recovery time High voltage ratings up to 4500V High current capability Optimized turn on and turn off characteristics


    Original     		I2094 SD233N/R SD233N/R PDF

    S50L

    Abstract: SD263C
    Contextual Info: Bulletin I2071 rev. A 10/94 SD263C.S50L SERIES Hockey Puk Version FAST RECOVERY DIODES Features 375A High power FAST recovery diode series 4.5 µs recovery time High voltage ratings up to 4500V High current capability Optimized turn on and turn off characteristics


    Original     		I2071 SD263C. DO-200AB 000V/us, 00A/us S50L SD263C PDF

    SD23

    Contextual Info: Bulletin I2094 rev. A 09/94 SD233N/R SERIES FAST RECOVERY DIODES Stud Version Features 235A High power FAST recovery diode series 4.5 µs recovery time High voltage ratings up to 4500V High current capability Optimized turn on and turn off characteristics


    Original     		I2094 SD233N/R SD233N/R 00A/us SD23 PDF

    S502A

    Abstract: S50L SD55 SD553C
    Contextual Info: Bulletin I2092 rev. B 10/94 SD553C.S50L SERIES Hockey Puk Version FAST RECOVERY DIODES Features High power FAST recovery diode series 6.0 µs recovery time 560A High voltage ratings up to 4500V High current capability Optimized turn on and turn off characteristics


    Original     		I2092 SD553C. DO-200AB 00A/us 000V/us S502A S50L SD55 SD553C PDF

    fr2t diode

    Abstract: fr2N fr2t strobo toshiba diode "do-41"
    Contextual Info: SILICON DIFFUSED TYPE FAST RECOVERY DIODE STROBO FLASHER APPLICATIONS. FAST RECOVERY • Average Forward Current • Repetitive Peak Reverse Voltage • Reverse Recovery Time U n it in m m IF(AV) = °-5A V r r m = 1000, 1500V tj-j* — 4 / ¿ s M A X IM U M RATING


    OCR Scan     		DO-41 fr2t diode fr2N fr2t strobo toshiba diode "do-41" PDF

    Contextual Info: SILICON DIFFUSED TYPE FAST RECOVERY DIODE TFR1N/T STRO BO FLASHER APPLICATIONS. FAST RECOVERY U n it in m m • Average Forward Current IF(AV) =0-5A • Repetitive Peak Reverse Voltage V r r m = 1000, 1500V • Reverse Recovery Time tj*j*—10//S M A X IM U M RATING


    OCR Scan     		--10//S DO-41 PDF