FAST RECOVERY DIODE 2A TRR 200NS Search Results

FAST RECOVERY DIODE 200ns

Abstract: fast recovery diode 1a trr 200ns fast recovery diode 2a trr 200ns TO3 package RthJC diode 15A FAST RECOVERY DIODE 200ns 2a NTE6200 NTE6202 NTE6206 NTE6208
Contextual Info: NTE6200 thru NTE6210 Positive Center Tapped Silicon Recitifers 30 Amp 15A per diode Features: D D D D Available in Standard (NTE6200 & NTE6202) and Fast (NTE6206 thru NTE6210) Recovery 250 Amps Peak One Half Cycle Surge Current Fast Recovery Types: trr = 200ns Max

K06N60

Abstract: fast recovery diode 2a trr 200ns SKB02N60
Contextual Info: SKB02N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls

fast recovery diode 2a trr 200ns

Abstract: fast recovery diode 1a trr 200ns K06N60 Q67040-S4214
Contextual Info: SKP02N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls

fast recovery diode 2a trr 200ns

Abstract: vvvf motor QCA100BA60 600v 2A ultra fast recovery diode dc motor control 100A Darlington 300v
Contextual Info: TRANSISTOR MODULE Hi- QCA100BA60 UL;E76102 M QCA100BA60 is a dual Darlington power transistor module which has series-connected ULTRA HIGH hFE, high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode trr 200ns . The mounting base of the module is

K06N60

Abstract: fast recovery diode 2a trr 200ns PG-TO-220-3-1 SKP02N60
Contextual Info: SKP02N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls

Contextual Info: SKP02N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls

K06N60

Abstract: SKB02N60 200v 1.5v 3a diode 400v 3a low vf diode
Contextual Info: SKB02N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls

Contextual Info: SKB02N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls

Contextual Info: SKP02N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls

Contextual Info: SKP02N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode C • 75% lower Eoff compared to previous generation combined with low conduction losses  Short circuit withstand time – 10 s  Designed for: - Motor controls

SKB02N60

Abstract: SKP02N60 200v 1.5v 3a diode
Contextual Info: SKP02N60 SKB02N60 Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls

K06N60

Abstract: SKB02N60 PG-TO-263-3-2
Contextual Info: SKB02N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for frequency inverters for washing machines,

Contextual Info: SKB02N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode C • 75% lower Eoff compared to previous generation combined with low conduction losses  Short circuit withstand time – 10 s  Designed for frequency inverters for washing machines,

E2 diode

Abstract: Diode B2x
Contextual Info: TRANSISTOR MODULE QCA30B/QCB30A40/60 UL;E76102 （M） QCA30B and QCB30A are dual Darlington power transistor modules which have series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. C2E1

Q67040-S4215

Abstract: SKB02N60 SKP02N60
Contextual Info: SKP02N60 SKB02N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls

Contextual Info: SKP02N60 SKB02N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls

K02N120

Contextual Info: SKB02N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode Allowed number of short circuits: <1000; time between short circuits: >1s. • 40lower Eoff compared to previous generation • Short circuit withstand time – 10 µs

K02N120

Abstract: fast recovery diode 1a trr 200ns
Contextual Info: SKB02N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode Allowed number of short circuits: <1000; time between short circuits: >1s. • lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for:

k02n120

Abstract: PG-TO-263-3-2 SKB02N120 k02n12
Contextual Info: SKB02N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode Allowed number of short circuits: <1000; time between short circuits: >1s. • lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for frequency inverters for washing machines,

K04N60

Abstract: SKP04N60 PG-TO-220-3-1
Contextual Info: SKP04N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls

K04n60

Contextual Info: SKB04N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls, Inverter

K04N60

Contextual Info: SKP04N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls

Contextual Info: SKB04N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode C • 75% lower Eoff compared to previous generation combined with low conduction losses  Short circuit withstand time – 10 s  Designed for frequency inverters for washing machines,

SKB04N60

Abstract: SKP04N60 Q67040-S4229
Contextual Info: SKP04N60 SKB04N60 Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls