FAST RECOVERY DIODE 600V 120A Search Results

Contextual Info: IDW100E60 Fast Switching Emitter Controlled Diode A Features: • 600V Emitter Controlled technology  Fast recovery  Soft switching  Low reverse recovery charge  Low forward voltage  175 °C junction operating temperature  Easy paralleling

R/1N5815 Diode

Contextual Info: IDW75E60 Fast Switching Emitter Controlled Diode Features: • 600V EmCon technology  Fast recovery  Soft switching  Low reverse recovery charge  Low forward voltage  175°C junction operating temperature  Easy paralleling  Pb-free lead plating; RoHS compliant

d100e60

Abstract: IDW100E60
Contextual Info: IDW100E60 Fast Switching Emitter Controlled Diode Features: • 600V Emitter Controlled technology  Fast recovery  Soft switching  Low reverse recovery charge  Low forward voltage  175°C junction operating temperature  Easy paralleling  Pb-free lead plating; RoHS compliant

APT50GF60B2RD

Abstract: APT50GF60LRD LRD 07 50GF60B2RD
Contextual Info: APT50GF60B2RD APT50GF60LRD 600V 80A APT50GF60B2RD Fast IGBT & FRED T-Max B2RD The Fast IGBT™ is a new generation of high voltage power IGBTs. Using NonPunch Through Technology the Fast IGBT™ combined with an APT freewheeling ultraFast Recovery Epitaxial Diode (FRED) offers superior

LRD 07

Abstract: IC-7060
Contextual Info: APT50GF60B2RD APT50GF60LRD 600V 80A APT50GF60B2RD Fast IGBT & FRED T-Max B2RD The Fast IGBT™ is a new generation of high voltage power IGBTs. Using NonPunch Through Technology the Fast IGBT™ combined with an APT freewheeling ultraFast Recovery Epitaxial Diode (FRED) offers superior

Contextual Info: Bulletin PD -2.531 Rev.A 09/03 HFA120FA60 HEXFRED Ultrafast, Soft Recovery Diode TM VR = 600V VF typ. * = 1.4V IF(AV) = 60A Qrr (typ.) = 270nC IRRM(typ.) = 7.0A trr(typ.) = 65ns di(rec)M/dt (typ.)* = 270A/µs K2 A2 K1 A1 HFA120FA60 Features • • • • Fast Recovery time characteristic

HFA120FA60

Abstract: IRFP250
Contextual Info: Bulletin PD -2.531 Rev.A 09/03 HFA120FA60 HEXFRED Ultrafast, Soft Recovery Diode TM VR = 600V VF typ. * = 1.4V IF(AV) = 60A Qrr (typ.) = 270nC IRRM(typ.) = 7.0A trr(typ.) = 65ns di(rec)M/dt (typ.)* = 270A/µs K2 A2 K1 A1 HFA120FA60 Features • • • • Fast Recovery time characteristic

diode k2

Abstract: HFA120FA60P
Contextual Info: Bulletin I27245 09/06 HFA120FA60P HEXFRED Ultrafast, Soft Recovery Diode TM VR = 600V VF typ. * = 1.4V IF(AV) = 60A K2 A2 K1 A1 Qrr (typ.) = 270nC IRRM(typ.) = 7.0A trr(typ.) = 65ns di(rec)M/dt (typ.)* = 270A/ s Features • • • • • • Fast Recovery time characteristic

Contextual Info: Bulletin I27245 09/06 HFA120FA60P HEXFRED Ultrafast, Soft Recovery Diode TM VR = 600V VF typ. * = 1.4V IF(AV) = 60A K2 A2 K1 A1 Qrr (typ.) = 270nC IRRM(typ.) = 7.0A trr(typ.) = 65ns di(rec)M/dt (typ.)* = 270A/ s Features • • • • • • Fast Recovery time characteristic

93051

Abstract: diode k2
Contextual Info: Bulletin PD -2.531 Rev.A 09/03 HFA120FA60 HEXFRED Ultrafast, Soft Recovery Diode TM VR = 600V VF typ. * = 1.4V IF(AV) = 60A Qrr (typ.) = 270nC IRRM(typ.) = 7.0A trr(typ.) = 65ns di(rec)M/dt (typ.)* = 270A/µs K2 A2 K1 A1 HFA120FA60 Features • • • • Fast Recovery time characteristic

IRU1239SC

Abstract: iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter
Contextual Info: SHENZHEN SHOUHE TECHNOLOGY CO., LTD. TEL: 0755-8380 8450 FAX: 0755-8380 8425 Part Information PartNo Function Line Pkg 100MT160PAPBF Discrete IRCI Module MTP 100MT160PA Discrete IRCI Module MTP 100MT160PBPBF Discrete IRCI Module MTP IRCI Module MTP IRCI Module MTK

High-Rel Discrete Semiconductors

Abstract: fast recovery diode 1000v 10A fast recovery diode 400v 5A fast recovery diode 600v 5A IN4954 150a 400v diode bridge diode 50v 5A 3-Phase Full-Wave Bridge Rectifier Zener Diode Glass 50v DIODE RECTIFIER BRIDGE SINGLE 55a 600v
Contextual Info: 2010 Catalog High-Rel Discrete Semiconductors Assembly Products Semtech’s Strategy in Discrete Products is to supply devices, either in axial, surface-mount or custom assembly configurations, that are rugged in design and in packages that are both hermetic and varied

Contextual Info: APTGU120DA120T Boost chopper PT IGBT Power Module VCES = 1200V IC = 120A @ Tc = 80°C Application NTC2 VBUS VBUS SENSE CR1 • • • AC and DC motor control Switched Mode Power Supplies Power Factor Correction Features Power MOS 7 Punch Through PT IGBT

Contextual Info: APTGU120DU120T Dual common source PT IGBT Power Module VCES = 1200V IC = 120A @ Tc = 80°C Application • AC Switches • Switched Mode Power Supplies • Uninterruptible Power Supplies C2 Q2 G2 E1 E2 E NTC1 NTC2 G2 C2 E2 C1 C2 E E1 E2 NTC2 G1 G2 NTC1 Benefits

Contextual Info: APTGU120SK120T Buck chopper PT IGBT Power Module VCES = 1200V IC = 120A @ Tc = 80°C Application VBUS NTC2 • • Q1 G1 AC and DC motor control Switched Mode Power Supplies Features Power MOS 7 Punch Through PT IGBT - Low conduction loss - Ultra fast tail current shutoff

IGBT 1200V 60A

Contextual Info: APTGV50H120BTPG Trench & Field Stop IGBT Q1, Q3: VCES = 1200V ; IC = 50A @ Tc = 80°C Boost chopper + full bridge NPT & Trench + Field Stop IGBT Power module Q1 Q3 G1 CR5 CR1 OUT2 OUT1 Q4 Q2 E5 G2 CR2 E2 G4 NTC1 CR4 E4 NTC2 NTC Full bridge top switches : Trench + Field Stop IGBT

IGBT full bridge

Abstract: APT0406 APT0502
Contextual Info: APTGV50H120BTPG Trench & Field Stop IGBT Q1, Q3: VCES = 1200V ; IC = 50A @ Tc = 80°C Boost chopper + full bridge NPT & Trench + Field Stop IGBT Power module Q1 Q3 G1 CR5 CR1 OUT2 OUT1 Q4 Q2 E5 G2 CR2 E2 G4 NTC1 CR4 E4 0/VBUS1 E NTC2 Full bridge top switches : Trench + Field Stop IGBT

K40T1202

Abstract: IGBT K40T1202 K40T120 IKW40N120 IKW40N120T2 PG-TO-247-3-21 IGBT 40A k40t12
Contextual Info: nd IKW40N120T2 TrenchStop 2 Generation Series Low Loss DuoPack : IGBT in 2nd generation TrenchStop® with soft, fast recovery anti-parallel EmCon diode C • • • • • • • • • • • Best in class TO247 Short circuit withstand time – 10µs

600v 60A fast recovery diode

Abstract: HUR60100 HUR60120 100V 60A Diode fast recovery diode 600v 120a
Contextual Info: HUR60100, HUR60120 High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode Dimensions TO-247AC A C TAB C A C A=Anode, C=Cathode, TAB=Cathode VRSM V 1000 1200 HUR60100 HUR60120 Symbol VRRM V 1000 1200 Test Conditions Dim. Millimeter Min. Max.

K40T1202

Abstract: IGBT K40T1202 K40T120 IKW40N120T2 1200v 50A IGBT
Contextual Info: TrenchStop Low Loss DuoPack : nd IKW40N120T2 2 Generation Series IGBT in 2nd generation TrenchStop® with soft, fast recovery anti-parallel EmCon diode C • • • • • • • • • • • Best in class TO247 Short circuit withstand time – 10µs

fast recovery diode 600v 120a

Abstract: HUR60100 HUR60120
Contextual Info: HUR60100, HUR60120 High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode Dimensions TO-247AC A C TAB C A C A=Anode, C=Cathode, TAB=Cathode VRSM V 1000 1200 HUR60100 HUR60120 Symbol VRRM V 1000 1200 Test Conditions Dim. Millimeter Min. Max.

Epitaxial Diode FRED VRRM 1200 V 40 ns

Abstract: fast recovery diode 600v 120a
Contextual Info: HUR2x60-100, HUR2x60-120 High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode Dimensions SOT-227 ISOTOP HUR2x60-100 HUR2x60-120 VRSM V 1000 1200 Symbol VRRM V 1000 1200 Test Conditions Dim. Millimeter Min. Max. Inches Min. Max. A B

k40T1202

Abstract: IGBT K40T1202 K40T120 IKW40N120T2 k40T1202 datasheet IKW40N120 igbt 40A 600V power supply 300W 5v 50a PG-TO-247-3 100MJ
Contextual Info: TrenchStop 2 Low Loss DuoPack : nd IKW40N120T2 Generation Series IGBT in 2nd generation TrenchStop® with soft, fast recovery anti-parallel EmCon diode C • • • • • • • • • • • Best in class TO247 Short circuit withstand time – 10µs

Contextual Info: APTGV50H120BTPG Boost chopper + full bridge NPT & Trench + Field Stop IGBT3 Power module Q1 Q3 G1 CR5 CR1 C OUT2 OUT1 Q4 Q2 Q5 CR5B CR2 E2 E NTC1 G4 CR4 E4 0/VBUS1 NTC Features • Q2, Q4, Q5 FAST Non Punch Through (NPT IGBT) - Switching frequency up to 100 kHz