FAST SWITCHING SCR Search Results

switching transistor 331

Contextual Info: FAST SWITCHING NPN POWER TRANSISTOR BUV62 • Fast Switching Times • Low Switching Losses • Low Saturation Voltage • Hermetic TO3 Metal package. • Ideally suited for Motor Control, Switching and Linear Applications • High Reliability Screening Options Available

BUV62

Abstract: LE17
Contextual Info: FAST SWITCHING NPN POWER TRANSISTOR BUV62 • Fast Switching Times • Low Switching Losses • Low Saturation Voltage • Hermetic TO3 Metal package. • Ideally suited for Motor Control, Switching and Linear Applications • High Reliability Screening Options Available

NPN Transistor 15A 400V to3

Abstract: BUV62A NPN 400V 40A NPN 250W LE17 transistor IC 12A 400v
Contextual Info: FAST SWITCHING NPN POWER TRANSISTOR BUV62A • Fast Switching Times • Low Switching Losses • Low Saturation Voltage • Hermetic TO3 Metal package. • Ideally suited for Motor Control, Switching and Linear Applications • High Reliability Screening Options Available

5BA DIODE

Contextual Info: ULTRA FAST RECOVERY POWER RECTIFIER 1N6626D3A / 1N6626D3B 1N6626D3C / 1N6626D3D • High Reliability Screening Options Available. • High forward current surge current capability. • Switching power supplies or other applications requiring fast switching and low forward loss.

Contextual Info: MITSUBISHI FAST RECOVERY DIODE MODULES RM50HG-12S HIGH SPEED SWITCHING USE NON-INSULATED TYPE Description: Mitsubishi Super Fast Recovery Diodes are designed for use in applications requiring fast switching. Features: □ Non-lsolated Package □ Planar Chips

Contextual Info: MITSUBISHI FAST RECOVERY DIODE MODULES RM25HG-24S HIGH SPEED SWITCHING USE NON-INSULATED TYPE Description: Mitsubishi Super Fast Recovery Diodes are designed for use in applications requiring fast switching. Features: □ Non-lsolated Package □ Planar Chips

LE17

Abstract: MIL-PRF19500 QR217 1N6626D3A-JQRS
Contextual Info: ULTRA FAST RECOVERY POWER RECTIFIER 1N6626D3A / 1N6626D3B • High Reliability Screening Options Available • High forward current surge current capability • Switching power supplies or other applications requiring fast switching and low forward loss ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated

RM25HG-24S

Contextual Info: MITSUBISHI FAST RECOVERY DIODE MODULES RM25HG-24S HIGH SPEED SWITCHING USE NON-INSULATED TYPE B F D A G - DIA. K L 2 1 H C J Description: Mitsubishi Super Fast Recovery Diodes are designed for use in applications requiring fast switching. Features: 3 ٗ Non-Isolated Package

Contextual Info: L S 101 25 Port LAN Switching Element |.C u b e @ ^-i Features Description • Single chip, Fast Ethernet switching fabric The LS101 is a 25 port Fast Ethernet, packet switching fabric. It integrates a 100 Mbit per port, full duplex, non-blocking, crossbar switch and

k0221

Abstract: powerex kd22
Contextual Info: POUEREX INC ]> h fOMEner 7ST4bEl GOÜElfil Powerex, Inc., Hlllls Street, Youngwood, Pennsylvania 1S697 412 925-7272 • O KD221A10 Tentative Fast Switching Dual Darlington Transistor Module 100 Amperes/125 Volts Description Powerex Fast Switching Dual Darlington

MPN7320

Abstract: MPN7302 MPN7315 MPN7310 MPN7306 Metelics MPN7300 MPN7312 MPN7
Contextual Info: MPN7300 Series Mesa PIN Diodes Description Features Metelics’s silicon mesa PIN diodes provide low capacitance and fast switching for switches, phase shifters, modulators and high speed attenuators. • • • Low Capacitance / Fast Switching Passivated Mesa Junctions

1N916A

Contextual Info: 1N916A High conductance ultra fast switching diode. Working inverse voltage 75 V. 0.5. Page 1 of 1 Enter Your Part # Home Part Number: 1N916A Online Store 1N916A Diodes High conductance ultra fast switching diode. Working Transistors inverse voltage 75 V.

tyco igbt module 25A

Abstract: P385A tyco igbt tyco igbt module 15A tyco igbt module p385a11 igbt full h bridge 25A tyco igbt module 20A tyco igbt module 35A tyco igbt module 20 a
Contextual Info: Target Data - PRELEMINARY fast switching H bridge module fastPIM 1 H Features: - 1 Phase Input Rectifier Bridge - 1 Phase fast switching IGBT + FRED full H bridge - NTC temperature sensor Tyco Electronics Rupert-Mayer-Str. 44, D-81359 München power.switches@tycoelectronics.com

IRGTI200F06

Contextual Info: bitemational ^Rectifier PD-9.968B IRGTI200F06 Fast Speed IGBT "HALF-BRIDGE" IGBT INT-A-PAK • Rugged Design • Simple gate-drive • Fast operation up to 10KHz hard switching, or 50KHz resonant • Switching-Loss Rating includes all "tail" losses Description

NPN Transistor 500V to3

Abstract: NPN Transistor 10A 400V to3
Contextual Info: SILICON NPN POWER SWITCHING TRANSISTOR BUX45X • High Voltage, High Power, Fast Switching. • Hermetic Metal TO3 Package. • Ideally suited for Motor Control and Power Switching Circuits • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated

bq2003

Abstract: BATTERY CHARGER SCR BQ2003PN
Contextual Info: bq2003 Fast Charge IC Features General Description ➤ Fast charge and conditioning of nickel cadmium or nickel-metal hydride batteries The bq2003 Fast Charge IC provides comprehensive fast charge control functions together with high-speed switching power control circuitry on a

transistor 9619

Abstract: M 9619 BUV18
Contextual Info: NPN SILICON SWITCHING TRANSISTOR BUV18X • High Current, Fast Switching, Low VCE sat . • Hermetic Metal TO3 Package. • Ideally suited for Motor Drive Control and Power Switching Circuits • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)

transistor 9619

Contextual Info: NPN SILICON SWITCHING TRANSISTOR BUV18X • High Current, Fast Switching, Low VCE sat . • Hermetic Metal TO3 Package. • Ideally suited for Motor Drive Control and Power Switching Circuits • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)

Contextual Info: bq2003 BENCHMARQ Fast Charge 1C Features General Description >• Fast charge and conditioning of nickel cadmium or nickel-metal hydride batteries The bq2003 Fast Charge IC provides comprehensive fast charge control functions together with high-speed switching power control circuitry on a

mj 1504

Abstract: igbt 5020 ce480v
Contextual Info: APT100GF60JR 600V Fast IGBT E E The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Fast IGBT offers superior ruggedness, fast switching speed and low Collector-Emitter On voltage. • Low Forward Voltage Drop

P385A

Abstract: P385-A11-PM
Contextual Info: fast switching H bridge module fastPIM 1 H Features: - 1 Phase Input Rectifier Bridge - 1 Phase fast switching IGBT + FRED full H bridge - NTC Copyright by Vincotech 1 Revision: 1 V23990-P38X-A fastPIM 1 H V23990-P38X-Axx-U-01-14 module types / Produkttypen

TRANSISTOR BQ20

Contextual Info: bq2003 BENCHMARQ Fast Charge 1C Features General Description >• Fast charge and conditioning of nickel cadmium or nickel-metal hydride batteries The bq2003 Fast Charge IC provides com prehensive fast charge control functions together w ith high-speed switching power control circuitry on a

APT100GF60LR

Abstract: IGBT 100A
Contextual Info: APT100GF60B2R/LR APT100GF60B2R APT100GF60LR 600V Fast IGBT 100A APT100GF60B2R T-Max B2R The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Fast IGBT offers superior ruggedness, fast switching speed and low Collector-Emitter On voltage.

IC 541

Contextual Info: APT33GF120BR 1200V 52A Fast IGBT TO-247 The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Fast IGBT offers superior ruggedness, fast switching speed and low Collector-Emitter On voltage. • Low Forward Voltage Drop