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3DQ10

Abstract: ICC1 EDI8L32512C20AI
Contextual Info: m EDI8L32512C u 512KX32 SRAM Module aECTROMC DE9GN1 MC 512Kx32CMOSHigh Speed Static RAM Features DSP Memory Solution The EDI8L32512C is a high speed, 5V, 16 megabit SRAM. • Motorola DSP96002 The device is available with access times of 12,15,17 and 20ns allowing the creation of a no wait state DSP memory

Contextual Info: mx EDI8G32512V S12Kx32SRAMModule Ei£C1RONC DE9GN& NC. ADVANCED 512Kx32Static RAM CMOS, High SpeedModule F e a tu r e s 512Kx32 bit CMOS Static The EDI8G32512V is a high speed 16 megabit Static RAM Random Access Memory module organized as 512K words by 32 bits. This module is

Contextual Info: m EDI8F32259V a 256KX32 SRAM Module ELECTRONIC DESIGNS. INC. ADVANCED Features 256Kx32 Static RAM CMOS, High Speed Module 256Kx32 bit CMOS Static Random Access Memory • Access Times CMOS: 12,15 and 20ns • Individual Byte Selects • Fully Static, No Clocks

VF154

Abstract: VF150C VF150B-2-C VF150B2 VF153A-C
Contextual Info: MATEC CORP/ VALPEY-FISHER bME D 5ûbl024 000032=} 4ba • VPC O S C ILL A T O R S VF150-C and VF150-C1 Series Enable/Disable TTL Hybrid Crystal Clock O scillators Valpey-Fisher’s VF150-C enable high and VF150-C1 (enable low) series of TTL oscillators allow a user the option of

Contextual Info: EDÍ681MC m D t UV RECTROMC DESH5N& N C Features 8 Megabit 1UxS Erasable CMOS EPROM 8 Megabit (1Mx$ UV Erasable CMOS EEPROM Fast Read Access Time - 90ns The EDI681C chip is a low-power, high performance, 4,194,304-bit ultraviolet erasable programmable read