FBGA 137 11.5 13 Search Results

TLC 1050

Abstract: FAA064 spansion Packing and Packaging Handbook DATE CODE Transistor Bo 17 Datasheet spansion Packing and Packaging Handbook WNF008
Contextual Info: ‹ Chapter 6 Tape and Reel CHAPTER 6 TAPE AND REEL Introduction Design and Materials Device Count per Reel Reel Dimensions and Labels Tape Dimensions Packages and Packing Methodologies Handbook 17 Oct 2008 6-1 ‹ Chapter 6 Tape and Reel INTRODUCTION A tape-and-reel packing container is available for shipment of the following Spansion products: single-chip FBGA packages

Contextual Info: S72WS-R based MCP Products 1.8 Volt-only x16 Flash Memory and SDRAM on Split Bus Simultaneous Read/Write, Burst Mode MirrorBit NOR Flash on Bus 1 Mobile SDRAM on Bus 2 S72WS-R based MCP Products Cover Sheet Data Sheet Advance Information Notice to Readers: This document states the current technical specifications regarding the Spansion

MT41K512M8

Abstract: sac305 A1A4M DDR3L MT41K256M8 MT41K1G4
Contextual Info: Preliminary‡ 4Gb: x4, x8 1.35V TwinDie DDR3L SDRAM Features TwinDie DDR3L SDRAM MT41K1G4 – 64 Meg x 4 x 8 Banks x 2 Ranks MT41K512M8 – 32 Meg x 8 x 8 Banks x 2 Ranks Features Options • Configuration – 64 Meg x 4 x 8 banks x 2 ranks – 32 Meg x 8 x 8 banks x 2 ranks

CV-8710

Abstract: EME-G770HCD Sumitomo EME-G600 material SUMITOMO EME G770 EME-G760 MGC CCL-HL832 EME-G600 CCL-HL832 sumitomo g770 Ablestik ablebond 3230 epoxy
Contextual Info:  Chapter 3 Package Materials CHAPTER 3 PACKAGE MATERIALS Introduction JIG-101 Ed 3.0 Declarable Substance List Reporting of 38 Substances of Very High Concern EU REACH Material Declaration Sheets Packages and Packing Methodologies Handbook 6 Jul 2010

Contextual Info: 2Gb: x4, x8 TwinDie DDR2 SDRAM Functionality TwinDie DDR2 SDRAM MT47H512M4 – 32 Meg x 4 x 8 Banks x 2 Ranks MT47H256M8 – 16 Meg x 8 x 8 Banks x 2 Ranks For the latest component data sheet, refer to Micron’s Web site: www.micron.com Functionality Options

MT41J512M8

Abstract: "2Gb DDR3 SDRAM" MT41J256M8 MT41J1G4 srt 8n 2Gb DDR3 SDRAM twindie MT41J512 DDR3-1066 DDR3-1333 MT41J512M4
Contextual Info: 4Gb: x4, x8 TwinDie DDR3 SDRAM Functionality TwinDieTM DDR3 SDRAM MT41J1G4 – 64 Meg x 4 x 8 Banks x 2 Ranks MT41J512M8 – 32 Meg x 8 x 8 Banks x 2 Ranks For component data sheets, refer to Micron’s Web site: www.micron.com Functionality Options The 4Gb TwinDie DDR3 SDRAM uses Micron’s 2Gb

63-ball

Abstract: DDR2 SDRAM Meg x 16 x 16 banks marking micron ddr2 marking WMM MICRON 63 TN-00-08 DDR2-533 DDR2-667 DDR2-800 MT47H256M8
Contextual Info: 2Gb: x4, x8 TwinDie DDR2 SDRAM Functionality TwinDie DDR2 SDRAM MT47H512M4 – 32 Meg x 4 x 8 Banks x 2 Ranks MT47H256M8 – 16 Meg x 8 x 8 Banks x 2 Ranks For the latest component data sheet, refer to Micron’s Web site: www.micron.com Functionality Options

bd248

Abstract: UBGA169 EP1800 324 bga thermal HC1S6 EP2S15 EP2S180 EP2S30 EP2S60 EP2S90
Contextual Info: Altera Device Package Information May 2005, vers.13.0 Introduction Data Sheet This data sheet provides package information for Altera devices. It includes these sections: • ■ ■ Device & Package Cross Reference below Thermal Resistance (starting on page 14)

MT41J256M8

Abstract: 2Gb DDR3 SDRAM twindie MT41J512M4 srt 8n MT41J256m8 fbga MT41J256M4 "DDR3 SDRAM" DDR3-1066 DDR3-1333 MT41J128M8
Contextual Info: 2Gb: x4, x8 TwinDie DDR3 SDRAM Functionality TwinDieTM DDR3 SDRAM MT41J512M4 – 32 Meg x 4 x 8 Banks x 2 Ranks MT41J256M8 – 16 Meg x 8 x 8 Banks x 2 Ranks For component data sheets, refer to Micron’s Web site: www.micron.com Functionality Options The 2Gb TwinDie DDR3 SDRAM uses Micron’s 1Gb

ep600i

Abstract: processor cross reference MS-034 1152 BGA Cross Reference epm7064 cross reference EP2S15 EP2S180 EP2S30 EP2S60 EP2S90
Contextual Info: Altera Device Package Information October 2005, vers.14.2 Introduction Data Sheet This data sheet provides package information for Altera devices. It includes these sections: • ■ ■ Device & Package Cross Reference below Thermal Resistance (starting on page 16)

schematic diagram online UPS for high frequency

Abstract: ag19
Contextual Info: v3.3 ProASICPLUS TM Flash Family FPGAs Features and Benefits • • High Capacity I/O • • • • • 75,000 to 1 million System Gates 27k to 198kbits of Two-Port SRAM 66 to 712 User I/Os Reprogrammable Flash Technology • • • • 0.22µ 4LM Flash-based CMOS Process

APA750

Abstract: GL25 4kx8 sram
Contextual Info: v3 .4 PLUS ProASIC TM Flash Family FPGAs Features and Benefits • • High Capacity I/O • • • • • 75,000 to 1 million System Gates 27k to 198kbits of Two-Port SRAM 66 to 712 User I/Os Reprogrammable Flash Technology • • • • 0.22µ 4LM Flash-based CMOS Process

OB33LN

Abstract: ProASICPLUS Flash Family FPGAs v3.3
Contextual Info: v3.3 ProASICPLUS TM Flash Family FPGAs Features and Benefits • • High Capacity I/O • • • • • 75,000 to 1 million System Gates 27k to 198kbits of Two-Port SRAM 66 to 712 User I/Os Reprogrammable Flash Technology • • • • 0.22µ 4LM Flash-based CMOS Process

Socket IC 80 pin LQFP

Abstract: V850E 150 MHz D70F3107 D70F3 4 pin surface mount crystal oscillator CD 5888 LQFP 128 pin Socket NEC lqfp 52 pogo pins V850E/MA1
Contextual Info: User’s Manual IE-703107-MC-EM1 In-Circuit Emulator Option Board Target Devices V850E/MA1 V850E/MA2 Document No. Date Published Printed in Japan U14481EJ3V0UM00 3rd edition August 2004 NS CP(K) [MEMO] 2 User’s Manual U14481EJ3V0UM Windows is either a registered trademark or a trademark of Microsoft Corporation in the United States

PQFP 176

Abstract: 240 pin rqfp drawing EP3C5E144 EP1K50-208 processor cross reference EP3C16F484 MS-034 1152 BGA 84 FBGA thermal TQFP 144 PACKAGE DIMENSION FBGA 1760
Contextual Info: Altera Device Package Information May 2007 version 14.7 Document Revision History Data Sheet Table 1 shows the revision history for this document. Table 1. Document Revision History 1 Date and Document Version May 2007 v14.7 Changes Made ● ● ● ●

LQFP 128 pin Socket

Abstract: IE-703107-MC-EM1 IE-V850E-MC IE-V850E-MC-A D70F3107
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

EP4CE15

Abstract: MS 034 BGA and QFP Altera Package mounting Altera pdip top mark jedec package MO-247 SOIC 20 pin package datasheet QFN "100 pin" PACKAGE thermal resistance Theta JC of FBGA QFN148 EP4CE22
Contextual Info: Altera Device Package Information Datasheet DS-PKG-16.2 This datasheet provides package and thermal resistance information for Altera devices. Package information includes the ordering code reference, package acronym, leadframe material, lead finish plating , JEDEC outline reference, lead

EP4CE6 package

Abstract: EP4CE40 Altera EP4CE6 EP4CE55 5M240Z 5M1270Z QFN148 5m570z 5M40 5M80
Contextual Info: Package Information Datasheet for Altera Devices DS-PKG-16.3 This datasheet provides package and thermal resistance information for Altera devices. Package information includes the ordering code reference, package acronym, leadframe material, lead finish plating , JEDEC outline reference, lead

M1012

Contextual Info: 4Gb: x16, x32 Mobile LPDDR2 SDRAM S4 Features Mobile LPDDR2 SDRAM MT42L256M16D1, MT42L128M32D1, MT42L256M32D2, MT42L128M64D2, MT42L512M32D4, MT42L192M64D3, MT42L256M64D4 Features Options • VDD2: 1.2V • Configuration – 32 Meg x 16 x 8 banks x 1 die – 16 Meg x 32 x 8 banks x 1 die

MT42L256M32D2

Abstract: MT42L128M32D1 lpddr2 DQ calibration MT42L256M16D1 LPDDR2 SDRAM MT42L128M64D2 MT42L256M64D4 mt42L256m16 LPDDR2 SDRAM micron LPDDR2
Contextual Info: 4Gb: x16, x32 Mobile LPDDR2 SDRAM S4 Features Mobile LPDDR2 SDRAM MT42L256M16D1, MT42L128M32D1, MT42L256M32D2, MT42L128M64D2, MT42L512M32D4, MT42L192M64D3, MT42L256M64D4 Features Options • VDD2: 1.2V • Configuration – 32 Meg x 16 x 8 banks x 1 die – 16 Meg x 32 x 8 banks x 1 die

N12030

Abstract: 2SC144 U12688E c5cs IE-703102-MC IE-703102-MC-EM1 IE-703102-MC-EM1-A U12197E U13875J V850E 150 MHz
Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社

D70F3107

Abstract: ua80 K1254 PD703107 CA850 IE-703107-MC-EM1 IE-V850E-MC IE-V850E-MC-A PD70F3107 703107
Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社

LGA 1156 PIN OUT diagram

Abstract: QFP11T144-002 LGA 1156 Socket diagram 216-LQFP Wells-CTI 36 lead Flat Pack smd AAAS Wells-CTI LCC socket Wells-CTI 880 020 BGA136 Enplas drawings
Contextual Info: Preface Thank you for your continuing loyalty to Fujitsu's semiconductor products. Electronic equipment is continually becoming smaller, lighter, and less expensive while also growing more advanced in terms of function and performance. As a result, applications for semiconductor devices such as IC and

K4T2G044QQ

Abstract: M392T5160QJA K4T1G044QQ
Contextual Info: VLP RDIMM DDR2 SDRAM DDR2 VLP Registered SDRAM MODULE 240pin VLP Registered Module based on 1Gb Q-die 72-bit ECC 60FBGA / 63FBGA / 65FBGA with Lead-free and Halogen-free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,