FBGA 63 SOLDERING Search Results

AMD reflow soldering profile BGA

Abstract: Theta JC of FBGA AM29LV800B thermal resistance solder paste 63sn alpha metal fbga thermal resistance fbga 12 x 12 thermal resistance smd codes marking A21 AMD thermal design retention mechanism FR4 substrate fiberglass AMD K6
Contextual Info: 5/11/99 Version 2.3 1999 Advanced Micro Devices, Inc. Advanced Micro Devices reserves the right to make changes in its products without notice in order to improve design or performance characteristics. This publication neither states nor implies any warranty of any kind, including but not limited to implied warrants of

transistor smd G46

Abstract: fluke 52 k/j Thermocouple 7512 pin diodes in micro semi data sheet smd transistor marking ey SMD MARKING CODE h5 MCP Technology Trend BGA-64 pad AMD reflow soldering profile BGA SMD MARKING CODE l6 BGA Solder Ball 0.6mm
Contextual Info: FBGA User’s Guide Version 4.2 -XO\  7KH IROORZLQJ GRFXPHQW UHIHUV WR 6SDQVLRQ PHPRU\ SURGXFWV WKDW DUH QRZ RIIHUHG E\ ERWK $GYDQFHG 0LFUR 'HYLFHV DQG XMLWVX $OWKRXJK WKH GRFXPHQW LV PDUNHG ZLWK WKH QDPH RI WKH FRPSDQ\ WKDW RULJ LQDOO\ GHYHORSHG WKH VSHFLILFDWLRQ WKHVH SURGXFWV ZLOO EH RIIHUHG WR FXVWRPHUV RI ERWK $0' DQG

ST-03-Z-06E

Abstract: SHARP IC sharp lead free identification Z06E LH28F800BJE-PTTLZ1 QFN leadframe ST03Z
Contextual Info: Product Change Notification Type of Notification: Standalone IC products will incorporate Lead Pb -Free terminals ISSUE DATE LAST BUY DATE NOTIFICATION NO. LAST SHIP DATE January 23, 2004 — ST-03-Z-06E — This is to advise you that the following product(s) are being changed.

truth table for 8 to 3 decoder

Abstract: HY57V283220
Contextual Info: HY57V283220T-I/ HY5V22F-I 4 Banks x 1M x 32Bit Synchronous DRAM DESCRIPTION The Hynix HY57V283220T-I / HY5V22F-I is a 134,217,728-bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. HY57V283220T-I / HY5V22F-I is organized as

Contextual Info: HY57V283220T/ HY5V22F 4 Banks x 1M x 32Bit Synchronous DRAM Revision History 0.1 : new generation 0.2 : FBGA Ball configuration typo 수정 Functional Block Diagram A10 -> A11 DC Operation Condition 에서 VDDmin 수정 3.0V -> 3.135V Capacitance Value 수정 C11,3,5 -> 4pf / C12 3.8 ->4pf

86-TSOP

Contextual Info: HY57V283220T/ HY5V22F 4 Banks x 1M x 32Bit Synchronous DRAM DESCRIPTION The Hynix HY57V283220T / HY5V22F is a 134,217,728-bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. HY57V283220T / HY5V22F is organized as 4banks of

29LV160TE

Abstract: 29lv800ta Micron 512MB NOR FLASH 29F800TA 29F033C 29f400tc TSOP 48 Package 29f160te Micron 32MB NOR FLASH 29f002tc
Contextual Info: T H E Home Products P O S S I B I L I T I E S A R E I N F I N I T E Contacts Contents Introduction to Flash Memory MEMORY SOLUTIONS NOR-Flash MirrorFlashTM FCRAMTM – Fast Cycle Ram MCP – Multi-Chip Packages Packaging Technology NOR-FLASH, MIRRORFLASHTM,

Contextual Info: HY57V283220T-I/ HY5V22F-I 4 Banks x 1M x 32Bit Synchronous DRAM DESCRIPTION The Hynix HY57V283220T-I / HY5V22F-I is a 134,217,728-bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. HY57V283220T-I / HY5V22F-I is organized as

Contextual Info: HY57V283220T-I/ HY5V22F-I 4 Banks x 1M x 32Bit Synchronous DRAM DESCRIPTION The Hynix HY57V283220T-I / HY5V22F-I is a 134,217,728-bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. HY57V283220T-I / HY5V22F-I is organized as

Contextual Info: Preliminary HY57V283220T/ HY5V22F 4 Banks x 1M x 32Bit Synchronous DRAM DESCRIPTION The Hynix HY57V283220T / HY5V22F is a 134,217,728-bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. HY57V283220T / HY5V22F is organized as 4banks of

HY5V52CF

Contextual Info: HY5V52CF 4 Banks x 2M x 32Bit Synchronous DRAM Preliminary DESCRIPTION The Hynix HY5V52CF is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. HY5V52CF is organized as 4banks of 2,097,152x32.

CKE 2009

Abstract: H57V1262G DRAM memory H57V1262GFR
Contextual Info: 128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O Document Title 4Bank x 2M x 16bits Synchronous DRAM Revision History Revision No. History Draft Date Remark 0.1 Initial Draft Jul. 2009 Preliminary 1.0 Release Aug. 2009 This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for

8MX16

Abstract: HY5V26E
Contextual Info: 128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O Document Title 4Bank x 2M x 16bits Synchronous DRAM Revision History Revision No. History Draft Date 1.0 First Version Release Feb. 2005 1.1 Changed tOH Only Symbol ‘H’ : 2.5ns -> 2.7ns Apr. 2005 Remark

hy57v161610ftp

Abstract: 1MX16BIT HY57V161610f HY57V1616
Contextual Info: 16Mb Synchronous DRAM based on 512K x 2Bank x16 I/O Document Title 2Bank x 512K x 16bits Synchronous DRAM Revision History Revision No. History Draft Date Remark 0.1 Initial Draft Jun. 2006 Preliminary 1.0 Final Version Release Jun. 2006 Final This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for

Contextual Info: HY5V52CFP 4 Banks x 2M x 32Bit Synchronous DRAM Document Title 4Bank x 2M x32Bit Synchronous DRAM Revision History Revision No. History Draft Date Remark Preliminary 0.1 Initial Draft May. 2003 0.2 1 Deleted Preliminary 2) Defined Input/Output Cap. Spec.

Contextual Info: HY5V52CFP 4 Banks x 2M x 32Bit Synchronous DRAM Document Title 4Bank x 2M x32Bit Synchronous DRAM Revision History Revision No. History Draft Date Remark Preliminary 0.1 Initial Draft May. 2003 0.2 1 Deleted Preliminary 2) Defined Input/Output Cap. Spec.

HY5V52CFP

Abstract: HY5V52CFPH
Contextual Info: Preliminary HY5V52CFP 4 Banks x 2M x 32Bit Synchronous DRAM Revision History 0.1 : New generation This document is a general product description and is subject to change without notice. Hynix Semiconductor Inc. does not assume any responsibility for use of circuits described. No patent licenses are implied.

Contextual Info: HY5V52CF 4 Banks x 2M x 32Bit Synchronous DRAM Preliminary DESCRIPTION The Hynix HY5V52CF is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. HY5V52CF is organized as 4banks of 2,097,152x32.

Socket IC 80 pin LQFP

Abstract: V850E 150 MHz D70F3107 D70F3 4 pin surface mount crystal oscillator CD 5888 LQFP 128 pin Socket NEC lqfp 52 pogo pins V850E/MA1
Contextual Info: User’s Manual IE-703107-MC-EM1 In-Circuit Emulator Option Board Target Devices V850E/MA1 V850E/MA2 Document No. Date Published Printed in Japan U14481EJ3V0UM00 3rd edition August 2004 NS CP(K) [MEMO] 2 User’s Manual U14481EJ3V0UM Windows is either a registered trademark or a trademark of Microsoft Corporation in the United States

4MX16

Abstract: 64MBIT
Contextual Info: 64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O Document Title 4Bank x 1M x 16bits Synchronous DRAM Revision History Revision No. History Draft Date Remark 0.1 Initial Draft Dec. 2004 Preliminary This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for

HY5V26E

Contextual Info: 128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O Document Title 4Bank x 2M x 16bits Synchronous DRAM Revision History Revision No. History Draft Date 1.0 First Version Release Feb. 2005 Remark This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for

Contextual Info: 128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O Document Title 4Bank x 2M x 16bits Synchronous DRAM Revision History Revision No. History Draft Date 1.0 First Version Release Feb. 2005 Remark This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for

Contextual Info: 64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O Document Title 4Bank x 1M x 16bits Synchronous DRAM Revision History Revision No. History Draft Date Remark 0.1 Initial Draft Dec. 2004 Preliminary This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for

Contextual Info: 128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O Document Title 4Bank x 2M x 16bits Synchronous DRAM Revision History Revision No. History Draft Date 1.0 First Version Release June. 2007 Remark This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for