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onsemi FCA16N60N MOSFET N-CH 600V TO-3PN
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FCA16N60N Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Type	PDF
FCA16N60N		Fairchild Semiconductor	600V N-Channel MOSFET SupreMOS ; 3-TO-3PN		Original	PDF

FCA16N60N Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: FCA16N60N N-Channel SupreMOS MOSFET 600 V, 16 A, 199 mΩ Features Description • RDS on = 170 mΩ (Typ.) @ VGS = 10V, ID = 8 A The SupreMOS® MOSFET is Fairchild Semiconductor®’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from	Original	PDF	FCA16N60N FCA16N60N
Untitled Abstract: No abstract text available Text: FCA16N60N N-Channel SupreMOS MOSFET 600 V, 16 A, 199 mΩ Features Description • RDS on = 170 mΩ (Typ.) @ VGS = 10V, ID = 8 A The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from	Original	PDF	FCA16N60N
mosfet 600V 16A Abstract: FCA16N60N Text: SupreMOSTM FCA16N60N N-Channel MOSFET 600V, 16A, 0.170Ω Features Description • RDS on = 0.17Ω ( Typ.)@ VGS = 10V, ID = 8A The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based	Original	PDF	FCA16N60N mosfet 600V 16A FCA16N60N
FCA16N60N Abstract: mosfet 600V 16A Text: SupreMOSTM FCA16N60N tm N-Channel MOSFET 600V, 16A, 0.170Ω Features Description • RDS on = 0.17Ω ( Typ.)@ VGS = 10V, ID = 8A The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based	Original	PDF	FCA16N60N FCA16N60N mosfet 600V 16A
Untitled Abstract: No abstract text available Text: FCA16N60N N-Channel SupreMOS MOSFET 600 V, 16 A, 199 mΩ Features Description • RDS on = 170 mΩ (Typ.) @ VGS = 10V, ID = 8 A The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from	Original	PDF	FCA16N60N
Arduino Mega2560 Abstract: 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l Text: ND3% BASE1 XXXX2108-0010-1-P 10 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 15-07-11 Hour: 13:07 TS:TS date TS time MCUS, MPUS, DSPS & DEVELOPMENT TOOLS Find Datasheets Online 8-BIT MCUS & DEVELOPMENT TOOLS 1 PSoC 3 DEVELOPMENT KITS ARDUINO MCU DEVLOPMENT PLATFORM	Original	PDF	CY8C38 CY8C29 incl795 12T9797 12T9804 12T9803 12T9800 12T9802 12T9801 12T9805 Arduino Mega2560 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l
FCP11N60 Abstract: AN-9068 FCP11N60 Equivalent FCP20N60 FCP22N60N FCPF11N60NT FCP11N60N FCPF9N60NT FCP13N60N FCP9N60N Text: www.fairchildsemi.com AN-9068 Gate Resistor Design Guidelines for SupreMOS Summary The faster switching of power MOSFETs enables higher power conversion efficiency. However, parasitic components in the devices and boards are involving switching characteristics more as the switching speed is	Original	PDF	AN-9068 FCP11N60 AN-9068 FCP11N60 Equivalent FCP20N60 FCP22N60N FCPF11N60NT FCP11N60N FCPF9N60NT FCP13N60N FCP9N60N