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    FCH25N60N Search Results

    FCH25N60N Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    FCH25N60N
    		Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 25A TO-247 Original PDF 8
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    FCH25N60N Price and Stock

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    onsemi FCH25N60N

    MOSFET N-CH 600V 25A TO247-3
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    DigiKey FCH25N60N Tube
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    Verical () FCH25N60N 480 88
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    Rochester Electronics FCH25N60N 1,163 1
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    TME FCH25N60N 1
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    Rochester Electronics LLC FCH25N60N

    POWER FIELD-EFFECT TRANSISTOR, 2
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    DigiKey FCH25N60N Bulk 85
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    FAIRCHILD FCH25N60N

    Trans MOSFET N-CH 600V 25A 3-Pin(3+Tab) TO-247 Rail
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    Verical () FCH25N60N 3,500 88
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    FCH25N60N 2,490 88
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    Fairchild Semiconductor Corporation FCH25N60N

    Power Field-Effect Transistor, 25A, 600V, 0.126ohm, N-Channel, MOSFET, TO-247AB
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    Rochester Electronics FCH25N60N 7,013 1
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    FCH25N60N Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    FCH25N60N

    Contextual Info: SupreMOS FCH25N60N TM tm N-Channel MOSFET 600V, 25A, 0.126Ω Features Description • RDS on = 0.108Ω ( Typ.)@ VGS = 10V, ID = 12.5A The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling


    Original     		FCH25N60N FCH25N60N PDF

    Contextual Info: FCH25N60N N-Channel SupreMOS MOSFET 600 V, 25 A, 126 mΩ Features Description • RDS on = 108 mΩ (Typ.) @ VGS = 10 V, ID = 12.5 A The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from


    Original     		FCH25N60N PDF

    FCH25N60

    Contextual Info: FCH25N60N N-Channel SupreMOS MOSFET 600 V, 25 A, 126 mΩ Features Description • RDS on = 108 mΩ (Typ.)@ VGS = 10 V, ID = 12.5 A The SupreMOS® MOSFET is Fairchild Semiconductor®’s nextgeneration of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiate it from


    Original     		FCH25N60N FCH25N60N FCH25N60 PDF

    FCH25N60

    Abstract: FCH25N60N mosfet 600V 25A TO247s
    Contextual Info: SupreMOS FCH25N60N TM tm N-Channel MOSFET 600V, 25A, 0.126Ω Features Description • RDS on = 0.108Ω ( Typ.)@ VGS = 10V, ID = 12.5A The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling


    Original     		FCH25N60N FCH25N60N FCH25N60 mosfet 600V 25A TO247s PDF

    Contextual Info: SupreMOSTM FCH25N60N tm N-Channel MOSFET 600V, 25A, 0.125Ω Features Description • RDS on = 0.107Ω ( Typ.)@ VGS = 10V, ID = 12.5A The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based technologies. By utilizing this advanced technology and precise process control, SupreMOS provides world class Rsp, superior


    Original     		FCH25N60N FCH25N60N PDF

    Contextual Info: SupreMOS FCH25N60N tm N-Channel MOSFET 600V, 25A, 0.126Ω Features Description • RDS on = 0.108Ω ( Typ.) at VGS = 10V, ID = 12.5A The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling


    Original     		FCH25N60N FCH25N60N PDF