FD-111 DIODE Search Results

1RFD110

Abstract: FD110 FD-111 diode of IRFD 110 IRFD 110 HARRIS IRFD110 irfd11 IRFD111
Contextual Info: 3 H A R R IS IRFD110/111/112/113 IRFD110R/111R/112R/113R N -C hannel Power MOSFETs Avalanche Energy Rated* August 1991 Features Package 4 -P IN D IP • 1A and 0.8A, 80V - 100V TOP VIEW • rDS on) = 0 .6 ÎÎ and 0 .8 fi • Single Pulse Avalanche Energy Rated*

Sharp IXD 067

Abstract: IXD 067 LH0080A LH0080A SHARP Z80B-CPU sharp z80 Sharp LH0080A LH0080 Z80E Z80B
Contextual Info: LH0080 Z80 CPU Central Processing Unit LH0080 • Z80 CPU Central Processing Unit Description Pin Connections The L H 0 0 8 0 Z 8 0 CPU Z 80 CPU for sh ort be­ low is a g e n e r a l-p u r p o se 8 - b i t m icrop rocessor fabricated usin g an N -chan nel silic o n -g a te process.

Contextual Info: • 43 022 71 O O S M CH O 77T ■ H A R R I HAS S I R F D 1 1 0 / 1 1 1 / 1 1 2 / 1 1 3 I R F D 1 1 0 R / 1 1 1 R / 1 1 2 R / 1 1 3 R N-Channel Power MOSFETs Avalanche Energy Rated* A u g u st 1991 Package Features 4-PJN DIP • 1A and 0.8 A , 8 0 V - 100V

IR2103 bldc driver

Abstract: 60NF60 e bike motor controller Electric Bike microcontroller ARM circuit active brake mosfet switch BLDC Motor 75N75 TE 555-1 HT45B0C ADC 7815
Contextual Info: Driving a BLDC Motor Using the HT45FM03B – C Language Driving a BLDC Motor Using the HT45FM03B – C Language D/N：HA0230E Introduction Brushless DC motors, which are controlled using electric commutation and PWM modulation, have the advantages of greater motor life by overcoming the problems associated with DC

siemens igbt BSM 150 gb 100 d

Abstract: CJ 53B siemens igbt BSM100GB160D csccn
Contextual Info: SIEMENS BSM 100 GB 160 D IGBT Module VCE= 1600 V 'c =2* 135 A at TC=25°c 'c = 2* 100 A at Tc =80°C • Power module • Half-bridge • Including fast free-wheel diodes • Package with insulated metal base plate Half-bridge Type Ordering code BSM 100 GB 160D

BSM111

Contextual Info: SIEMENS SIMOPAC MOSFET Module VDS /D BSM 111 AR C = 100 V = 200 A ^DS(on) = 8*5 mQ • • • • • • Power m odule Single switch N channel Enhancem ent m ode Package with insulated m etal base plate C ircuit diagram : Fig . 1 a ’ ) Type Ordering code

IR2103 bldc driver

Abstract: electric bike motor assembly language program for speed control e bike motor controller IC2 7805 active brake mosfet switch BLDC Motor HT45B0C assembly language program for speed control of dc brushless bike brushless dc motor speed control bike
Contextual Info: Driving a BLDC Motor using the HT45FM03B Assembly Language Driving a BLDC Motor using the HT45FM03B (Assembly Language) D/N：HA0229E Introduction Brushless DC motors, in using electric commutation and PWM drive methods, greatly extend the life of electric motors, by overcoming problems derived from DC motor mechanical

thyristor tag 8422

Abstract: ditty EPC-31 gpr 163 MIPS R4000 mmi2 thyristor handbook transistor mfsa 42 C790 D-10
Contextual Info: TX System RISC TX79 Core Architecture Symmetric 2-way superscalar 64-bit CPU Rev. 2.0 The information contained herein is subject to change without notice. The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or

DIODE A93

Abstract: 251C FDF60BA 5210s TI-251
Contextual Info: DIODE M ODULE F.R.D. FDF60BA40/60 UL;E76102(M ) Power Diode Module F D F 6 0 B A is designed for single phase full wave rectification, which has four fast recovery diodes connected in a single phase bridge configuration. F D F 6 0 B A is suitable for high frequency application requiring low loss and high speed

metelics FSCM 59365

Abstract: FSCM 59365
Contextual Info: M E T EL IC S CORP HE T-07-Û7 o| t.051355 QD0G103 q | MSS-50,000 Series High Barrier Schottky Diode metelics CORPORATION Features Applications • L o w Rs — 5i2 • High dynamic range mixers, modulators, samplers • High Fco — 370 G H z • Doublers

Contextual Info: "2 -4 -r'style split-bobbin transform ers for triple-output pp applications (type MT1 S q nal bn:. e xl Rn dt - d Is linn nl tr h nsfon111; is ter n ! [ i , ' o ; r ( j u : .sor h p p sat o n s II I hi no r i r . v s z a s r;itf;(i to IOCj VA ra l e d in lei ms o ‘ t u e I nal DC;

irf 560

Abstract: Diode LT 58A 9410A
Contextual Info: FAIRCHILD March 1997 M lC O N D U C T O R FDR9410A N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is

Contextual Info: D EVELO PM EN T DATA PCD3360 T h is data sheet co n ta in s advance in fo rm a tio n and sp e cificatio n s are su b ject to change w ith o u t n otice. - A _ PROGRAMMABLE MULTI-TONE TELEPHONE RINGER G E N E R A L D ESC R IPTIO N The PCD3360 is a CMOS integrated circuit, designed to replace the electro-mechanical bell in telephone

Datenbuch

Abstract: Raupenhaus hermsdorf VEB Halbleiterbauelemente thermistore Scans-048 Frankfurt Oder LB1201 DSAGER0002 Thermistor 15k
Contextual Info: I I i n □ electronic Hinweis: Die Daten von Dioden und Transistoren aus dieser Unterlage sind bereits in anderen Datenbüchern des Raupenhauses enthalten. Deshalb wurde aus diesem Buch nur der Teil "Halbleiter-Widerstände" entnommen. Halbleiter-Bauelemente

FD-111 diode

Abstract: 9109 DC FD-111 transistor U6A910959X w9109 9109 510SI fairchild micrologic ScansUX978
Contextual Info: P R E L I M I N A R Y D A T A S H E E T • O C T O B E R 1967 • HLLDTuL9109 HLLDTuL 9109 HIGH LE V E L LOGIC DIO D E T R A N S I S T O R M I C R O L O G I C - HIGH HIGH VOLTAGE HEX INVERTER I N T E G R A T E D CIR CUIT S VOLTAGE A F A IR C H IL D COMPATABLE C U R R E N T S I N K I N G L O G I C P R O D U C T

f2141

Abstract: SA-27 OP260SL OP260SLB
Contextual Info: OPTEK TECHNOLOGY INC Ofc>E D I 000012a b 7 = Ì S S flQ Optoelectronics Division I T - m - i& TRW Electronic Components Group f f ? îr V Product Bulletin S066 January 1985 GaAIAs Plastic Infrared Emitting Diodes Types 0P260SL, OP26QSLC, QP260SLB, QP260SLA

SV3a

Abstract: WSOP 48 socket 0B 2262 20-PIN LZ21N3V LZ21N3VS SV-3A
Contextual Info: SHARP LZ21N3V/VS L Z 21N 3V /V S 1/2-type Interline Color CCD Area Sensors with 2 140 k Pixels DESCRIPTION PIN CONNECTIONS The LZ21N3V/VS are 1/2-type 8.08 mm solid- TOP VIEW 20 -P IN H A L F -P IT C H W D IP state image sensors that consist of PN photo­

Contextual Info: LTC2389-16 16-Bit, 2.5Msps SAR ADC with Pin-Configurable Analog Input Range and 96dB SNR DESCRIPTION FEATURES n n n n n n n n n n n n n n The LTC 2389-16 is a low noise, high speed 16-bit successive approximation register SAR ADC. Operating from a single 5V supply, the LTC2389-16 supports pinconfigurable fully differential (±4.096V), pseudo-differential unipolar (0V to 4.096V), and pseudo-differential

DC182

Contextual Info: LTC2389-16 16-Bit, 2.5Msps SAR ADC with Pin-Configurable Analog Input Range and 96dB SNR Description Features 2.5Msps Throughput Rate n ±1LSB INL Max n Guaranteed 16-Bit, No Missing Codes n Pin-Configurable Analog Input Range: ±4.096V Fully Differential

ADM1033 D

Abstract: fs5 mosfet 1404D
Contextual Info: ADM1033 Thermal Monitor and Fan Speed RPM Controller The ADM1033 is a one channel remote- and local-temperature sensor and fan controller. The remote channel monitors the temperature of the remote thermal diode, which may be discrete 2N3904/6s or may be located on a microprocessor die. The device also

Contextual Info: ADM1033 Thermal Monitor and Fan Speed RPM Controller The ADM1033 is a one channel remote- and local-temperature sensor and fan controller. The remote channel monitors the temperature of the remote thermal diode, which may be discrete 2N3904/6s or may be located on a microprocessor die. The device also

TJA1145/FD

Contextual Info: TJA1145 High-speed CAN transceiver for partial networking Rev. 2 — 18 April 2014 Product data sheet 1. General description The TJA1145 is a high-speed CAN transceiver that provides an interface between a Controller Area Network CAN protocol controller and the physical two-wire CAN bus.

siemens igbt BSM 75 gb 100

Abstract: GTS FC-22 1B02 siemens igbt BSM 150 gb 100 d gts fc-518ls
Contextual Info: SIEMENS IGBT Module BSM 75 GB 160 D 750gb16a doc VCE= 1600 V /c = 2* 100 A at r c = 25°C lc = 2* 75 A at Tc =80°C • Power module • Half-bridge • Including fast free-wheel diodes • Package with insulated metal base plate Half bridge Type BSM 75 GB 160D

sram 2112

Abstract: 1N5817 M40Z111 M4Z28-BR00SH1 M4Z32-BR00SH1 MBRS120T3 SOH28
Contextual Info: w - SCS-THOMSON M 40Z111 M 40Z111V k7 # . IM [MDiHI ènnMPM]D(§Ii NVRAM CONTROLLER for 1Mb or 4Mb LPSRAM PRELIM IN ARY DATA CONVERT LOW POWER SRAMs into NVRAMs PRECISION POWER MONITORING and POWER SWITCHING CIRCUITRY AUTOMATIC WRITE-PROTECTION when Vcc is OUT-OF-TOLERANCE