FD50 Search Results

gct thyristor

Abstract: thyristor cdi FD500 4500v FD500JV-90DA
Contextual Info: MITSUBISHI SOFT RECOVERY DIODE FD500JV-90DA HIGH POWER, HIGH FREQUENCY PRESS PACK TYPE OUTLINE DRAWING FD500JV-90DA Dimensions in mm 0.4MIN φ3.5 ± 0.2 2.2 ± 0.2DEPTH 0.4MIN 26 ± 0.5 TYPE NAME φ47 φ75MAX φ3.5 ± 0.2 2.2 ± 0.2DEPTH ¡VRRM Repetitive peak reverse voltage . 4500V

FD500JV-90DA

Abstract: 1570a
Contextual Info: 三菱半導体〈ソフトリカバリーダイオード〉 FD500JV-90DA 大電力高周波用 平形 外形図 FD500JV-90DA 単位：mm 0.4min φ3.5 ± 0.2 フカサ2.2 ± 0.2 0.4min 26 ± 0.5 形 名 φ47 φ75max φ3.5 ± 0.2 フカサ2.2 ± 0.2 ¡IF AV 平均順電流 . 500A

FD500R65KE3-K

Abstract: IRF 930 FD500R65 FD500R
Contextual Info: TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules FD500R65KE3-K hochisolierendesModul highinsulatedmodule VorläufigeDaten/PreliminaryData VCES = 6500V IC nom = 500A / ICRM = 1000A TypischeAnwendungen • Chopper-Anwendungen • Mittelspannungsantriebe

Contextual Info: FD500D12 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current600 @Temp (øC) (Test Condition)93# V(RRM)(V) Rep.Pk.Rev. Voltage600 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.10k¥ V(FM) Max.(V) Forward Voltage1.85 @I(FM) (A) (Test Condition)1.9k @Temp. (øC) (Test Condition)25#

Contextual Info: FD500D10 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current600 @Temp (øC) (Test Condition)93# V(RRM)(V) Rep.Pk.Rev. Voltage500 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.10k¥ V(FM) Max.(V) Forward Voltage1.85 @I(FM) (A) (Test Condition)1.9k @Temp. (øC) (Test Condition)25#

7002S

Abstract: IP2K P0603B 48S67 C25 02D
Contextual Info: 10 11 12 MTG1 1 0_N _R D 3 0X 12 M T C l10_N _BD 3 0X 12 MTG1 10_N_RD3 0 X 1 2 “ MTCl 1 0 _ 1 J _ P .D 1 0 X 1 ; M TCl 1 0_N_RD30X12 FDS02 F D _DOTO4 O FD503 FD_DO"IO 4 C F ttSO l F0_D O T040 FD504 FD _r>O T040 FD_DOTO 4 0 F D _ D O ' ‘0 4 D FD_DOT0 4 0

application FULL WAVE RECTIFIER

Abstract: FD500
Contextual Info: MITSUBISHI HIGH-FREQUENCY RECTIFIER DIODES FD500GH HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE FD500GH • IF AV Average forward current •■■.500A • V rrm Repetitive peak reverse voltage ■■• ■ 2500V, 2800V • Q rr Reverse recovery charge ■■. 300//C

fd500gv

Contextual Info: MITSUBISHI HIGH-FREQUENCY RECTIFIER DIODES FD500GV HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE FD500GV OUTLINE DRAWING • I f a v Average forward c u rre n t. 500A • V rrm Repetitive peak reverse voltage • Q rr D im e n s io n s in m m

gct thyristor

Abstract: FD5000AV-100DA RECTIFIER DIODE 5000A
Contextual Info: MITSUBISHI RECTIFIER DIODE ARY FD5000AV-100DA IMIN PREL . ation nge. pecific to cha final s subject a t o re is is nic limits a e: Th tr Notice parame Som HIGH-POWER, GENERAL USE PRESS PACK TYPE OUTLINE DRAWING Dimensions in mm 10.5 ± 1 FD5000AV-100DA 6.35 x 10.8

Contextual Info: MITSUBISHI SOFT RECOVERY DIODES FD500JV-90DA HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE OUTLINE DRAWING Dimensions in mm * 2.2 ± 0.2DEPTH APPLICATION Clamp diode for GCT Thyristor High-power inverters Power supplies as high frequency rectifiers MAXIMUM RATINGS

gct thyristor

Abstract: FD500JV-90DA 2000A power diode qrr 530G thyristor cdi 2000A power diode
Contextual Info: MITSUBISHI SOFT RECOVERY DIODES FD500JV-90DA HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE OUTLINE DRAWING FD500JV-90DA Dimensions in mm 0.4MIN φ3.5 ± 0.2 2.2 ± 0.2DEPTH 0.4MIN 26 ± 0.5 TYPE NAME φ47 φ75MAX ¡IF AV Average forward current . 500A

FD500R65KE3-K

Contextual Info: TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules FD500R65KE3-K hochisolierendesModul highinsulatedmodule VorläufigeDaten/PreliminaryData VCES = 6500V IC nom = 500A / ICRM = 1000A TypischeAnwendungen • Chopper-Anwendungen • Mittelspannungsantriebe

Contextual Info: FD500D16 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current600 @Temp (øC) (Test Condition)93# V(RRM)(V) Rep.Pk.Rev. Voltage800 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.10k¥ V(FM) Max.(V) Forward Voltage1.85 @I(FM) (A) (Test Condition)1.9k @Temp. (øC) (Test Condition)25#

Contextual Info: MITSUBISHI RECTIFIER DIODE ARY FD5000AV-100DA IMIN PREL . ation nge. pecific to cha final s subject a t o re is is nic limits a e: Th tr Notice parame Som HIGH-POWER, GENERAL USE PRESS PACK TYPE OUTLINE DRAWING Dimensions in mm 10.5 ± 1 FD5000AV-100DA 6.35 x 10.8

FD5000AV-100DA

Abstract: 100DA
Contextual Info: 三菱半導体〈一般整流ダイオード〉 FD5000AV-100DA 開発中 大電力一般用 平形 外形図 単位：mm 10.5 ± 1 FD5000AV-100DA 6.35 x 10.8 0.4min φ3.5 ± 0.2 フカサ2.2 ± 0.2 26 ± 0.5 φ85 ± 0.2 12 ± 2 φ85 ± 0.2 0.4min ¡IF AV 平均順電流 . 5000A

gct thyristor

Abstract: FD500JV-90DA thyristor cdi 2000A power diode 2000A power diode qrr
Contextual Info: MITSUBISHI SOFT RECOVERY DIODES FD500JV-90DA HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE OUTLINE DRAWING FD500JV-90DA Dimensions in mm 0.4MIN φ3.5 ± 0.2 2.2 ± 0.2DEPTH 0.4MIN 26 ± 0.5 TYPE NAME φ47 φ75MAX ¡IF AV Average forward current . 500A

PL509

Abstract: PL511 PL508 PL507
Contextual Info: A B C D E J1 SUSB# ADINP BATT1 SMCLOCK SMDATA T_CLK ROUT+ ROUT- FD3 FD_DOT040 FD4 FD_DOT040 FD501 FD_DOT040 FD1 FD_DOT040 1 1 FD2 FD_DOT040 FD502 FD_DOT040 FD503 FD_DOT040 FD504 FD_DOT040 1 VMAIN 1 +5V CHARGING BAT_TYPE 2 4 6 8 10 12 14 16 18 20 22 24 26 28

Contextual Info: TechnischeInformation/TechnicalInformation IGBT-Modul IGBT-Module FD500R65KE3-K hochisolierendesModul highinsulatedmodule VCES = 6500V IC nom = 500A / ICRM = 1000A TypischeAnwendungen • Chopper-Anwendungen • Mittelspannungsantriebe • Traktionsumrichter

2000A power diode

Abstract: FD500JV-90DA
Contextual Info: MITSUBISHI SOFT RECOVERY DIODES FD500JV-90DA HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE OUTLINE DRAWING FD500JV-90DA Dimensions in mm * ' lF AV Average forward current. 500A ' V r r m Repetitive peak reverse vo lta g e . 4 5 0 0 V

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD98431 10/100 Mbps Ethernet TM CONTROLLER DESCRIPTION The µPD98431 is a 10/100 Mbps Ethernet controller having eight Media Access Control MAC ports conforming to IEEE 802.3 and IEEE 802.3u. Each port can store 1 packet of receive data since each port has a 2 KB receive FIFO. This can reduce the

DFSDM

Abstract: SAM9M10 K 2141 AC97 ARM926EJ-S AT91SAM ISO7816 NBC 3111 hc 541 rfid reader id-20
Contextual Info: Features • 400 MHz ARM926EJ-S ARM Thumb® Processor – 32 KBytes Data Cache, 32 KBytes Instruction Cache, MMU • Memories • • • • – DDR2 Controller 4-bank DDR2/LPDDR, SDR/LPSDR – External Bus Interface supporting 4-bank DDR2/LPDDR, SDR/LPSDR, Static

V15H16-CZ100A03

Contextual Info: 4 FD-50360-L 3 i HDNEYWELL PART NUMBER 2 REV B V 15H16-CZ100A03 DDCUMENT 0039 99 1 CHANGED SSK BY 27MAY08 CH EC K BLR B B 03,1O!^°5 MOUNTING HOLE 4,50 2,6 5 3 - NOTES: A 1, MDUNTING HUILES WILL ACCEPT 03 MAX PINS DR SCREWS, 2, TERMINALS WILL ACCEPT 6,35m WIDE QUICK CDNNECT RECEPTACLES

Contextual Info: AT91SAM ARM-based Embedded MPU SAM9263 Description The AT91SAM9263 32-bit microcontroller, based on the ARM926EJ-S processor, is architectured on a 9-layer matrix, allowing a maximum internal bandwidth of nine 32-bit buses. It also features two independent external memory buses, EBI0 and EBI1, capable of interfacing with a wide range of memory devices and an IDE hard disk. Two external buses prevent

Contextual Info: CP3UB17 www.ti.com SNOSCX6A – APRIL 2005 – REVISED DECEMBER 2013 CP3UB17 Reprogrammable Connectivity Processor with USB Interface Check for Samples: CP3UB17 1 GENERAL DESCRIPTION The CP3UB17 connectivity processor combines a powerful RISC core with on-chip SRAM and Flash