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    onsemi FDA59N25

    MOSFET N-CH 250V 59A TO3PN
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    Fairchild Semiconductor Corporation FDA59N25

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    FDA59N25 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF PDF Size Page count
    FDA59N25
    		Fairchild Semiconductor 250V N-Channel MOSFET Original PDF 590.34KB 8

    FDA59N25 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: FDA59N25 N-Channel UniFETTM MOSFET 250 V, 59 A, 49 mΩ Features Description • RDS on = 49 mΩ (Max.) @ VGS = 10 V, ID = 29.5 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to


    Original     		FDA59N25 PDF

    Contextual Info: FDA59N25 N-Channel UniFETTM MOSFET 250 V, 59 A, 49 mΩ Features Description • RDS on = 49 mΩ (Max.) @ VGS = 10 V, ID = 29.5 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to


    Original     		FDA59N25 PDF

    FDA59N25

    Abstract: mosfet equivalent fda 59 n 30 mosfet fda 59 n 30
    Contextual Info: UniFET FDA59N25 TM VDS = 250V VDS Avalanche = 300V RDS(on) Typ. @10V = 41mΩ 250V N-Channel MOSFET Features Description • 59A, 250V, RDS(on) = 0.049Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,


    Original     		FDA59N25 FDA59N25 mosfet equivalent fda 59 n 30 mosfet fda 59 n 30 PDF

    FDA59N25

    Abstract: n-channel 250V power mosfet
    Contextual Info: UniFET FDA59N25 TM VDS = 250V VDS Avalanche = 300V RDS(on) Typ. @10V = 41mΩ 250V N-Channel MOSFET Features Description • 59A, 250V, RDS(on) = 0.049Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,


    Original     		FDA59N25 FDA59N25 n-channel 250V power mosfet PDF

    fda59n25

    Contextual Info: FDA59N25 N-Channel UniFETTM MOSFET 250 V, 59 A, 49 mΩ Features Description • RDS on = 49 mΩ (Max.) @ VGS = 10 V, ID = 29.5 A • Low Gate Charge (Typ. 63 nC) • Low Crss (Typ. 70 pF) UniFETTM MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on planar stripe and DMOS technology.


    Original     		FDA59N25 FDA59N25 PDF

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    Contextual Info: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


    Original     		element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor PDF

    FQPF8N60C equivalent

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    Contextual Info: Introduction Fairchild offers a wide range of digital display solutions that increase power efficiency and decrease standby power— helping to meet the ever-increasing worldwide demand for energy conservation. Our products can help you meet the most stringent energy regulations including EnergyStar, 80 Plus and other standards specified by organizations such as


    Original     		PDF