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    onsemi FDA70N20

    MOSFET N-CH 200V 70A TO3PN
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    DigiKey FDA70N20 Tube
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    Newark FDA70N20 Bulk 450
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    TME FDA70N20 1
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    New Advantage Corporation FDA70N20 90 1
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    Fairchild Semiconductor Corporation FDA70N20

    POWER FIELD-EFFECT TRANSISTOR, 70A I(D), 200V, 0.035OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET
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    Quest Components FDA70N20 6
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    Rochester Electronics FDA70N20 5 1
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    ComSIT USA FDA70N20 450
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    FDA70N20 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FDA70N20 Fairchild Semiconductor 200V N-Channel MOSFET Original PDF
    FDA70N20_NL Fairchild Semiconductor 200V N-Channel MOSFET Original PDF

    FDA70N20 Datasheets Context Search

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    FDA70N20

    Abstract: No abstract text available
    Text: FDA70N20 N-Channel UniFETTM MOSFET 200 V, 70 A, 35 mΩ Features Description UniFETTM MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to


    Original     		PDF FDA70N20 FDA70N20

    Untitled

    Abstract: No abstract text available
    Text: FDA70N20 N-Channel UniFETTM MOSFET 200 V, 70 A, 35 mΩ Features Description • RDS on = 35 mΩ (Max.) @ VGS = 10 V, ID = 35 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to


    Original     		PDF FDA70N20

    FDA70N20

    Abstract: No abstract text available
    Text: TM FDA70N20 200V N-Channel MOSFET Features Description • 70A, 200V, RDS on = 0.035Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 66 nC)


    Original     		PDF FDA70N20 FDA70N20

    N-Channel MOSFET 200v

    Abstract: FDA70N20
    Text: TM FDA70N20 200V N-Channel MOSFET Features Description • 70A, 200V, RDS on = 0.035Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 66 nC)


    Original     		PDF FDA70N20 FDA70N20 N-Channel MOSFET 200v

    irfb4115

    Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
    Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


    Original     		PDF element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor