FDB52N20 Search Results

Contextual Info: FDB52N20 N-Channel UniFETTM MOSFET 200 V, 52 A, 49 mΩ Features Description • RDS on = 49 mΩ (Max.) @ VGS = 10 V, ID = 26 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to

N-Channel MOSFET 200v

Abstract: FDB52N20 FDB52N20TM
Contextual Info: UniFET TM FDB52N20 200V N-Channel MOSFET Features Description • 52A, 200V, RDS on = 0.049Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 49 nC)

FDB52N20

Abstract: FDB52N20TM
Contextual Info: UniFETTM FDB52N20 200V N-Channel MOSFET Features Description • 52A, 200V, RDS on = 0.049Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 49 nC)

General Semiconductor diode marking 49

Contextual Info: FDB52N20 N-Channel UniFETTM MOSFET 500 V, 52 A, 49 m Features Description • RDS on = 49 m (Max.) VGS = 10 V, ID = 26 A UniFETTM MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to

Contextual Info: FDB52N20 N-Channel UniFETTM MOSFET 200 V, 52 A, 49 m Features Description • RDS on = 49 m (Max.) VGS = 10 V, ID = 26 A UniFETTM MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to

Contextual Info: UniFETTM FDB52N20 200V N-Channel MOSFET Features Description • 52A, 200V, RDS on = 0.049Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 49 nC)

52N20

Abstract: fdb fairchild FDB52N20
Contextual Info: UniFET TM FDB52N20 200V N-Channel MOSFET Features Description • 52A, 200V, RDS on = 0.049Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 49 nC)

schematic diagram atx Power supply 500w

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Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

220v AC voltage stabilizer schematic diagram

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Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 AD9272 Analog Front End, iMEMS Accelerometers & Gyroscopes . . . . . . 782, 2583 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-528 Acceleration and Pressure Sensors . . . . . . . . . . . . . . . . . . . . . . . . . . Page 2585

FQPF8N60C equivalent

Abstract: FQPF9N50C equivalent LCD inverter circuit FAN7530 equivalent FAN7601 200w dc to ac inverter Circuit diagram FAN7529 equivalent FAN7601 equivalent FDD6685 equivalent FQPF10N60C equivalent
Contextual Info: Introduction Fairchild offers a wide range of digital display solutions that increase power efficiency and decrease standby power— helping to meet the ever-increasing worldwide demand for energy conservation. Our products can help you meet the most stringent energy regulations including EnergyStar, 80 Plus and other standards specified by organizations such as